• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.435-439
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• 2016

We developed a Ag nanowire patterning technique using a water-soluble sacrificial layer. To form a water-soluble sacrificial layer, germanium was deposited on the substrate and then water-soluble germanium oxide was simply formed by thermal oxidation of germanium using a conventional furnace. The formation of Ag nanowire patterns with various line and space arrangements was successfully demonstrated using this patterning process. The main advantage of this patterning technique is that it does not use a strong acid etchant, thereby preventing damage to the Ag nanowire during the patterning process.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.13-15
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• 2017

Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

• Progress in Superconductivity
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• v.1 no.1
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• pp.47-50
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• 1999

An Ag/Ni bi-layer sheet was fabricated by the combination of powder metallurgy, diffusion bonding, cold rolling and texture annealing processes. After heat treating the cold rolled thin Ag/Ni bi-layer sheet at $900^{\circ}C$ for 4h, the excellent cube texture was developed on nickel surface. Qualitative chemical analysis using EPMA showed that inter diffusions of Ni and Ag in Ag/Ni bi-layer composite were negligible. It showed that Ag can be used as a chemical barrier for Ni and vice versa.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.465-473
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• 1998

The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.124-127
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• 2002

In this study, The cathode interface layer (CIL) was investigated using aromatic diamine derivatives. Cz-TPD (4,4'-biscarbazolyl(9)-biphenyl) used in the cathode interface layers is investigated emition charcaracteristics at the green organic electroluminescent devices. TPD (N,N' -dyphenyl -N -N'-bis (3-methy phenyl)-1,1' -biphenyl-4,4' -diamine) as the hole transformer layer and $Alq_{3}:tris$ (8-hyd-roxyquinoline) aluminium) as the electron transport layer and emiting layer maded use of the organic electroluminescent device. The Organic Electroluminescent Device with Ag cathode and CIL of Cz-TPD(4,4'-biscarbazolyl(9)-biphenyl) showed good EL characteristics compare to a conventional Mg:Ag device and also an improved storage stability. [1] As the change in MgAg, Cz-TPD/Ag, Ag at the chthode, the electrical and optical charcaracteriseics were investigated.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.8
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• pp.316-322
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• 1986

In this paper, the photodoping effect on the interface of Ag-amorphous As2S3 thin film has been investigated by measuring the resistance change of the Ag layer, the absorption coefficient of the As2S3, the optical density of As2S3 layer and the short-circuit photocurrents under light irradiation. As the experimental results, the photodissolution rate and the photodiffusion rate depends on the magnitude of photon energy absorbed in the As2S3. The sensitivity limit of the photodissolution rate at Ag layer was about 630[nm] and the sensitivity limit of the photodiffusion rate at the Ag-As2S3 interface was about 680[nm]. Also, it was found that the depth of photodiffusion was proportional to the square root of exposing time.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.201-203
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• 2016

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10⁻⁵ Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10⁻⁵ Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.55-56
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• 2006

We investigated the diffraction grating efficiency by the DPSS laser beam wavelength to improve the diffraction efficiency on AsGeSeS & Ag/ AsGeSeS thin film. Diffraction efficiency was obtained from DPSS(532nm)(P:P)polarized laser beam on AsGeSeS, Ag/ AsGeSeS and AsGeSeS/Ag/AsGeSeS thin films. As a result, for the laser beam intensity, 0.24 mW, single AsGeSeS thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for 2.4 mW, it was recorded with the fastest speed of 50 s, which the diffraction grating forming speed is faster than that of 0.24 mW beam. Ag/ AsGeSeS and AsGeSeS/ Ag/ AsGeSeS multi-layered thin film also show the faster grating forming speed at 2.4 mW and higher value of diffraction efficiency at 0.24 mW.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.304-304
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• 2011

We investigated the effect of different spin direction of anti-ferromagnetic layer on the magnetic properties of ferromagnetic layer in Fe-NiO and Fe-CoO bi-layer systems. For Fe-NiO system, we prepared the clean MgO(001) surface half-covered with 20 nm Ag films as a substrate for magnetic layers. Then we grew NiO wedge layers on the substrate, and added 8 monolayer(ML) Fe layers on the wedge layer. We examined magnetic properties of the bi-layer system using the surface magnetic optical Kerr effect(SMOKE) and X-ray magnetic linear dichroism(XMLD). From SMOKE measurement we observed the coercivity enhancement due to the set-up of anti-ferromagnetic order of NiO films in both of the Fe/NiO/MgO(001) and Fe/NiO/Ag/MgO(001) system. The most remarkable results in our observation is that the coercivity enhancement of Fe/NiO/Ag/MgO(001) is much larger than that of Fe/NiO/MgO(001). XMLD experiments confirmed the out-of-plane spin direction of NiO layers in Fe/NiO/MgO(001) and in-plane spin-direction of NiO layers in Fe/NiO/Ag/MgO(001), and we concluded that the origin of large enhancement of coercivity is due to the strong parallel coupling between Fe layers and NiO layers. We also confirmed that this strong parallel coupling maintained across the thin Ag layer inserted between Fe and NiO layers. For Fe-CoO system, we prepared Fe/CoO/Ag(001) and Fe/CoO/MnO(001) systems and observed much larger coercivity enhancement in Fe/CoO/Ag(001).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.