• Bulletin of the Korean Chemical Society
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• v.11 no.3
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• pp.200-205
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• 1990

Chemically modified electrodes(CMEs), based on 2-imino-1-cyclopentane-dithiocarboxylic acid (icdc) containing carbon paste, have been characterized using cyclic voltammetric techniques. Ag(I) was chemically deposited on the CMEs, and voltammograms were obtained with the electrode in a separate buffer solution. The CME surface can be regenerated with exposure to acid and reused for deposition. In 10 deposition/measurement/regenerate cycles, the linear response have been reproduced up to $1{\times}10^{-6}$ M in linear sweep voltammetry and 1${\times}$10-8 M in differential pulse voltammetry with relative standard deviation of 5.2% and 12.4%, respectiveiy. The sensitivity increased with deposition time and scanning rate, and detection limit was $1{\times}10^{-7}M\;and\;1{\times}10^{-9}M$ at 20 minutes deposition in the linear sweep voltammetry and differential pulse voltammetry, respectively. The presence of some metal ions does not influence the silver ion response. Satisfactory results were obtained for the analysis of the silver ion for a variety of reference materials without interference of Hg ion at the condition of pH = 5-6.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.3021-3024
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• 2010

• Journal of the Korean Chemical Society
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• v.41 no.10
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• pp.547-551
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• 1997

• Advances in nano research
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• v.3 no.2
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• pp.97-109
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• 2015

Citrate ion is a commonly used reductant in metal colloid synthesis, undergoes strong surface interaction with silver nanocrystallites. The slow crystal growth observed as a result of the interaction between the silver surface and the citrate ion makes this reduction process unique compared to other chemical and radiolytic synthetic methods. The antimicrobial effects of silver (Ag) ion or salts are well known, but the effects of citrate coated Ag nanoparticles (CAgNPs) are scant. Herein, we have isolated biofilm causative bacteria and fungi from drinking water PVC pipe lines. Stable CAgNPs were prepared and the formation of CAgNPs was confirmed by UV-visible spectroscopic analysis and recorded the localized surface plasmon resonance of CAgNPs at 430 nm. Fourier transform infrared spectroscopic analysis revealed C=O and O-H bending vibrations due to organic capping of silver responsible for the reduction and stabilization of the CAgNPs. X-ray diffraction micrograph indicated the face centered cubic structure of the formed CAgNPs, and morphological studies including size (average size 50 nm) were carried out using transmission electron microscopy. The hydrodynamic diameter (60.7 nm) and zeta potential (-27.6 mV) were measured using the dynamic light scattering technique. The antimicrobial activity of CAgNPs was evaluated (in vitro) against the isolated fungi, Gram-negative and Gram-positive bacteria using disc diffusion method and results revealed that CAgNPs with 170ppm concentration are having significant antimicrobial effects against an array of microbes tested.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.253-257
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• 2015

The implanting of metal products is performed with numerous surface treatments because of toxicity and adhesion. Recently, the surface modification of metal products has been actively studied by coating the surface of the TiC or TiN film. We prepared a Ti(10%)Ag Target which may be used in dental oral material by, using the AIP(arc ion plating) system TiAgN coating layer that was deposited on Ti g.23. The purpose of this study was to establish the optimal bias voltage conditions of the coated TiAgN layer formed by the AIP process. The TiAgN coatings were prepared with different bias voltage parameters (0V to -500V) to investigate the effect of bias voltage on their mechanical and chemical properties. The SEM(scanning electron microscope), EDS(energy dispersive X-ray spectrometer), XRD(X-ray diffraction), micro-hardness, and potentiodynamic polarization were measured and the surface characteristics of the TiAgN coating layers were evaluated. The TiAgN coating layer had different mechanical characteristics based on the bias voltage, which also showed differences in thickness and composition.

• Journal of the Korean Chemical Society
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• v.47 no.1
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• pp.26-30
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• 2003

The dinuclear $Ag_2[Phen]_2[S_2P(OPr)_2]_2$(phen=1,10-phenanthroline; Pr=propyl), was prepared by the reaction of bis(dipropyldithiophosphato) silver(I) complex with 1,10-phenanthroline ligand, and its structure was determined by X-ray crystallography. The two dipropyldithiophosphato ligands each bridge two silver atoms to form an eight-membered $Ag_2S_4P_2$ ring, while the 1,10-phenanthroline molecule coordinates to a silver atom to complete the local tetrahedral geometry for the metal ion. The Ag-S bond distances are 2.559(1) and 2.567(1)${\AA}$, and the Ag-N bond distances are 2.366(3) and 2.471(3)${\AA}$.

• Journal of the Korean Chemical Society
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• v.38 no.3
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• pp.186-196
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• 1994

Three fully dehydrated partially $Ag^+$-exchanged zeolite A(Ag_4Na_8-A, Ag_6Na_6-A, and Ag_8Na_4-A) were treated at $250^{\circ}C$ with 0.1 torr Rb vapor at 4 h. Their structures were determined by singlecrystal X-ray diffraction methods in the cubic space group $Pm{\bar3}m$ (a = 12.264(4) $\AA$, a = 12.269(1) $\AA$, and a= 12.332(3) $\AA$, respectively) at $22(1)^{\circ}C$, and were refined to the final error indices, R(weighed), of 0.056 with 131 reflections, 0.068 with 108 reflections, and 0.070 with 94 reflections, respectively, for which I > $3\sigma(I).$ In these structures, Rb species are found at three different crystallographic sites; three $Rb^+$ ions per unit cell are located at 8-ring centers, ca. 6.0∼6.8 $Rb^+$ ions are found opposite 6-rings on threefold axes in the large cavity, and ca. 2.5 $Rb^+$ ions are found on three fold axes in the sodalite unit. Also, Ag species are found at two different crystallographic sites; ca. 0.6∼1.0 $Ag^+$ ion lies opposite 4-rings and about 1.8∼4.2 Ag atoms are located near the center of the large cavity. In these structures, the numbers of Ag atoms per unit cell are 1.8, 3.0, and 4.2, respectively, and these are likely to form hexasilver clusters at the centers of the large cavities. The $Rb^+$ ions, by blocking 8-rings, may have prevented silver atoms from migrating out of the structure. Each hexasilver cluster is stabilized by coordination to 6-ring, 8-ring $Rb^+$ ions, and also by coordination to a 4-ring $Ag^+$ ion.

• Bulletin of the Korean Chemical Society
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• v.24 no.4
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• pp.489-493
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• 2003

2-Mercaptobenzothiazole was used as a highly selective and efficient carrier for the uphill transport of silver ion through a chloroform bulk liquid membrane. In the presence of thiosulfate ion as a suitable metal ion acceptor in the receiving phase, the amount of silver transported across the liquid membrane after 180 min was 90 ± 3.0%. The selectivity and efficiency of silver ion transported from aqueous solutions containing equimolar mixtures of $Zn^{2+}, Cu^{2+}, Co^{2+}, Ni^{2+}, Cd^{2+}, Pb^{2+}, Bi^{3+}, Fe^{2+}, Fe^{3+}, Pd^{2+}, Mn^{2+}, Hg^{2+}, Sn^{2+}, Ca^{2+}, Mg^{2+}, K^+, Na^+ and Li^+$ were investigated.