• 한국광학회지
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• 제3권4호
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• pp.205-216
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• 1992

공명각과 비공명각에서 각각 표면 플라즈몬의 전기장 분포를 계산하고 두 경우를 비교하였다. 표면 플라즈몬 공명의 응용으로서 (1) 은박막 위에 덧증착한 얇은 ZnS 박막의 광학 상수를 두께가 증가함에 따라 측정하였고, (2) 발산하는 입사파를 이용하여 은박막 위에 덧증착한 두께가 서로 다른 SiO 박막에 의한 4개의 표면 플라즈몬 공명을 한 화면에서 관측하였으며 (3) 평행광을 이용하여 은박막 위에 덧증착한 격자 모양의 SiO박막과 문자 "가" 모양의 SiO 박막의 형상을 측정하였다.

• 한국재료학회지
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• 제25권3호
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.81-84
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• 2002

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

• Bulletin of the Korean Chemical Society
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• 제34권10호
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• pp.2942-2946
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• 2013

Nanostructured Ag thin films could be facilely prepared by soaking glass substrates in ethanolic solutions containing $Ag_2O$ powders at an elevated temperature. The formation of zero-valent Ag was corroborated using X-ray diffraction and X-ray photoelectron spectroscopy. The deposition of Ag onto a glass substrate was readily controlled simply by changing the reaction time. Due to the aggregated structures of Ag, the surface-enhanced Raman scattering spectra of benzenethiol could be clearly identified using the Ag-coated glass. The enhancement factor at 514.5 nm excitation estimated using benzenethiol reached $1.0{\times}10^5$ while the detection limit of rhodamine 6G was found to be as low as $1.0{\times}10^{-13}$ M. Since this one-pot fabrication method is eco-friendly and is suitable for the mass production of diverse Ag films, it is expected to play a significant role in the development of surface plasmon-based analytical devices.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• 한국진공학회지
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• 제5권2호
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1367-1368
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• 2007

We prepared Zinc Oxide thin films introducing Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. In order to obtain good electrical properties, Ag layer was introduced. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.373-376
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• 2012

Thin films of Ag-SiO2-TiO2 composite oxides with SiO2/TiO2 of 20/80 molar compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium isopropoxide (TIP) as precursors. Ag-SiO2-TiO2 films coated on commercial glass substrates have successfully been synthesized using sol-gel method. The Ag-SiO2-TiO2 film with 0.5% Ag-added concentration and 20 mol% SiO2-mixture gives optimal results on crystalline structure, optical property, surface area, and photochromic property. Absorption near the wavelength of the incident light decreased gradually. The reversibility of the two-photon writing process in Ag-SiO2-TiO2 film is clearly seen.

• Journal of Magnetics
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• 제4권4호
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• pp.128-130
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• 1999

We have measured the magnetization of Ni/Ag(Ni at %)/Ni (50$\AA$/30 $\AA$/50 $\AA$) trilayered films including Ni atoms inserted in non-magnetic Ag spacer. The magnetization as a function of applied field at 5 K and as a function of temperature at 100 Oe were investigated respectively using SQUID magnetometer. In these measurements peaks of magnetization at some critical temperatures were observed in all the samples. The antiferromagnetic coupling energy between neighboring Ni layers showed oscillatory behaviors according to the amounts of the Ni atoms inserted in Ag spacer. Loose spin model suggested by slonczews야 was used to explain such results.