• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1440-1441
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• 2008

In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The Chalcogenide film thickness was 0.5um and Ag thin film was varied from 10nm and 20nm. Diffraction efficiency was obtained from (P:P) polarized Diode Pumped Solid State laser(DPSS, 532.0nm: 200mW) beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.15-18
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• 1996

The elemental segregation in the sputter-deposited AgInSbTe recording thin films was studied by means of Auger electron spectroscopy and ESCA for the specimens of as-deposited and as heat-treated conditions. Auger electron spectroscopy and ESCA revealed an extremely thin layer of elemental inhomogeneity, especially for the silver, even in as-deposited condition. The chemical analysis results obtained in this alloy system are discussed in terms of process parameters and target microstructure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer. Mutilayer structures farmed by alternating metal(Ag) a chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). Such multilayer structures have a greater sensitivity to illumination and larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1993년도 추계연구발표회 논문개요집
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• pp.40-41
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• 1993

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1997년도 추계연구발표회 논문개요집
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• pp.58-59
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• 1997

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1995년도 추계연구발표회 논문개요집
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• pp.86-87
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• 1995