• Composites Research
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• v.22 no.3
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• pp.9-17
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• 2009

Nanoindentation behaviours on the films of softer Ag film/harder Cu substrate structure were studied by the molecular dynamics method. As a result, it was shown that the stiffness and hardness of films were strongly dependent on the thickness of films. The stiffness and hardness increased with the thickness of film within a critical range as an inverse Hall-Petch relation. The stiffness and hardness of Cu substrate with Ag film less than 5 nm were observed to be lower than those of bulk silver. In particular, the flower-like dislocation loop was created on the interface by the interaction between dislocation pile-up and misfit dislocation during the indentation of Ag film/Cu substrate with film thickness less than 4 nm, which seemed to be associated with the drop of load in the indentation load versus displacement curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.47-47
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• 2001

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.667-668
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• 2011

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• Journal of Magnetics
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• v.18 no.4
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• pp.412-416
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• 2013

FePt:Ag (100 nm) nanocomposite thin films were prepared on naturally-oxidized Si substrates by dc magnetron sputtering at room temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) are used to investigate the effects of annealing pressures on the ordering processes and microstructures of these films. The average sizes for the $L1_0$ ordered domains and the FePt grains are reduced to d = 9 nm and D = 13 nm from d = 19 nm and D = 34 nm, respectively, when the annealing pressure is enhanced to 0.6 GPa from room pressure at 873 K. Furthermore, the size distribution is improved into a narrow range. With increasing pressure, the coercivity of $L1_0$-FePt:Ag thin films decreases from 15.1 to 7.6 kOe. In the present study, the effects of high pressure on the $L1_0$ ordering processes and microstructures of FePt:Ag nanocomposite films were discussed.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.308-313
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• 1997

The magnetoresistance (MR) and the saturation field behavior of the CoFe-Ag nano granular films as a function of the ferromagnetic underlayer and overlayer materials were investigated. The maximum MR ratio of 25.7 % and the saturation field of 2.1 kOe in the as-deposited 3000 $\AA$ $(Co_{92}Fe_8)_{31}Ag_{69}$ single alloy films at room temperature were obtained. The MR ratio and the saturation field of the 100 $\AA$ alloy film were 1.2 % and 5.2 kOe, respectively. Those of the sandwiched alloy films of 200 $\AA$ thick with the Fe under and overlayer of 100 $\AA$ were 11 % and 1.8 kOe respectively. The reduction of saturation field in the sandwiched alloy films is due to the exchange coupling between the ferromagnetic layers and the alloy layer. Among the Fe and FeNi, the more effective materials to reduce the saturation field of the sandwiched alloy films was Fe.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.51-55
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• 2015

We have fabricated silver nanowire (AgNW) films as a stretchable and transparent electrode on polydimethylsiloxane (PDMS) substrates using a spray coater. Inherently, they show poor surface roughness and stretchability. To tackle it, we have employed a conductive polymer, poly (3,4-ethylenedioxythiophene) : Poly(styrene sulfonate) (PEDOT : PSS). PEDTO : PSS solution is mixed with AgNWs or spin-coated on the AgNW film. Compared with AgNW film only, PEDOT : PSS film only, and polymer-mixed AgNW films, the AgNW/polymer bilayer films exhibit much better surface roughness and stretchability. It is found that spray-coating of AgNWs on uncured PDMS and spin-coating of PEDOT : PSS solution on the AgNW films enhance the surface roughness of electrodes. Such a bilayer structure also provides a stable resistance under tensile strain due to the fact that each layer acts as a detour route for carriers. With this structure, we have obtained the peak-to-peak roughness ($R_{pv}$) as low as 76.8nm and a moderate increase of sheet resistance (from $10{\Omega}/{\Box}$ under 0% strain to $30{\Omega}/{\Box}$ under 40% strain).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.429-435
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• 2009

In this study, we investigated microstructure and the CO gas sensing properties of Ag-CuO-$SnO_2$ thin films prepared by co-evaporation and subsequently thermal oxidation at air atmosphere. The sensitivity of a Cu-Sn films, thermally oxidized at $600^{\circ}C$, is strongly affected by the amount of Cu. At Cu:7 wt%-Sn:93 wt%, the film exhibited a maximum sensitivity of ${\sim}2.3$ to CO gas of 1000 ppm at $300^{\circ}C$. In contrast, the sensitivity of a Sn-Ag film did not change significantly with the amount of Ag. An enhanced sensitivity of ${\sim}3.7$ was observed in the film with a composition of Ag:3 wt%-Cu:4 wt%-Sn:93 wt%, when thermally oxidized at $600^{\circ}C$. In addition, this thin film shows a response time of ${\sim}80$ sec and a recovery time of ${\sim}450$ sec to 1000 ppm CO gas. The results demonstrate that the CO sensitivity of the Ag-CuO-$SnO_2$ thin films may be closely associated with coexistence of $SnO_2$ and SnO phase, decrease in average particle size, and a porous microstructure. We also suggest that co-evaporation and followed by thermal oxidation is a very simple and effective method to prepare oxide gas sensor thin films.