• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.293-298
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• 2001

EB-NMP free standing film is manufactured from NMP solution of polyaniline(emeraldine base EB). Also ES(emeraldine salt EB . HCl) film is manufactured by doping of EB-NMP film with 1 mole HCI aqueous solution. And EB-mixture films containing conductor(carbon black, graphite, Ag etc.) are prepared, In this study, electromagnetic interference shielding efficiency(EMI SE) of ES free standing film ($\sigma$=5 S/cm, t=0.14mm) is 23~25 dB in the frequency range of 10 MHz~1 GHz. ES-mixture(carbon black, graphite, Ag etc.) films, polyaniline film doped camphorsulfonic acid(CSA) show higher EMI SE(30~34 dB, 36~42 dB, 44~52 dB, 34~43 dB) property than that of ES free standing film, respectively.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.371-375
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• 2006

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductor. The electromagnetic properties of doped and undoped $Ag_2O$ in the BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers. It was confirmed experimentally that a larger amount of magnetic flux was trapped in the $Ag_2O$ doped sample than in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. We have fabricated superconductor ceramics by the chemical process. A high Tc superconductor with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_y$ was prepared by the organic metal salts method. Experimental results suggest that the intermediate phase formed before the formation of the superconductor phase may be the most important factor. The relation between electromagnetic properties of Bi HTS and the external applied magnetic field was studied. The electrical resistance of the superconductor was increased by the application of the external magnetic field. But the increase in the electrical resistance continues even after the removal of the magnetic field. The reason is as follows; the magnetic flux due to the external magnetic field penetrates through the superconductor and the penetrated magnetic flux is trapped after the removal of the magnetic flux. During the sintering, doped $Ag_2O$ was converted to Ag particles that were finely dispersed in superconductor samples. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that $Ag_2O$ acts to amplify pinning centers of magnetic flux, contributing to the occurrence of the electromagnetic properties.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.348-354
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• 2011

Long-lasting brightness $Sr_{4}Al_{14}O_{25}$ : $Eu^{2+}$, $Dy^{3+}$, $Ag^{+}$ phosphor was synthesized by modified solid state reaction and its photoluminescence was investigated. $Sr(NO_3)_{2}$ and $Al(NO_3)_3{\cdot}9H_{2}O$ as starting materials, and $B_{2}O_{3}$ as a flux were mixed with $Eu_{2}O_{3}$ as an activator, $Dy_{2}O_{3}$ as a coactivator, and $AgNO_{3}$ as a charge compensator. The crystalline of target powder showed a single-phase $Sr_{4}Al_{14}O_{25}$ by the XRD characterization and the average particle size was about 20-30 ${\mu}m$ from the FE-SEM observation. $Ag^{+}$ ion doping effects (0-0.06 mol) on $Sr_{4}Al_{14}O_{25}:Eu^{2+},\;Dy^{3+},\;Ag^{+}$ phosphor were measured by photoluminescence spectrometer and luminescence meter. The of photoluminescence intensity of the $Sr_{3.64}Al_{14}O_{25}:Eu_{0.11},\;Dy_{0.22},\;Ag_{0.03}$ phosphor was higher than other compositions and afterglow brightness was 0.186 $cd/m^{2}$.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• 전기의세계
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• v.20 no.2
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1371-1374
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• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• Journal of the Korean Electrochemical Society
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• v.5 no.1
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• pp.1-6
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• 2002

Silver doped vanadium pentoxides with a doping ratio Ag/V ranging from 0.03 to 0.11 were synthesized by sol-gel process, and $Li/Ag_xV_2O_5$ cell was investigated by the electrochemical methods. It appears to be amorphous layered material and entangled fibrous textures has been grown to form anisotropic corrugated fibrils. NMR measurements revealed that several different kinds of $Li^+$ ions exist in the lithium intercalated xerogel electrodes and the average cell potential was about 3.0V vs. $Li/Li^+$. The cell capacity of the silver doped $Ag_xV_2O_5$ xerogel cathodes was more than 359 mAh/g at discharge current 10mA/g and cycle efficiency $94\%$ was achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.478-478
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• 2013

Resistance-change Random Access Memory (ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics.