• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.248-248
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• 2010

We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

• Progress in Superconductivity
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• v.1 no.1
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• pp.47-50
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• 1999

An Ag/Ni bi-layer sheet was fabricated by the combination of powder metallurgy, diffusion bonding, cold rolling and texture annealing processes. After heat treating the cold rolled thin Ag/Ni bi-layer sheet at $900^{\circ}C$ for 4h, the excellent cube texture was developed on nickel surface. Qualitative chemical analysis using EPMA showed that inter diffusions of Ni and Ag in Ag/Ni bi-layer composite were negligible. It showed that Ag can be used as a chemical barrier for Ni and vice versa.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.140-140
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• 2000

The initial growth mode of Nb on Ag(11) in sub-monolayer regime and the influence of subsequent 520K annealing are studied using UHV Scanning Tunneling Microscopy. E-beam evaporated Nb is deposited onto the substrate at RT, and STM measurements are carried out at RT and 78 K. With Nb being immiscible in bulk Ag, 3D islands formation begins at early stage and no particular ordered structure is found. After annealing to 520K, most of islands are disappeared from terrace. There exist 2 possibilities. : (1) Diffusion of Nb into the 2nd or 3rd layer of Ag substrate or (2) agglomeration of Nb on Ag at higher temperature. A model will be given to explain the evidence. In addition, we investigated the change of STM image according to bias voltage depending on island size. Possible physical mechanism responsible for such behavior together with interaction between Nb islands and reactive gases will be also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.33-38
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• 2000

In this study, multilayer piezoelectric actuators were fabricated with 75 layers by a conventional multi-layer capacitor (MLC) techniques, using 70Ag/30Pd paste as an internal electrode which can be sintered at low temperature and have cost down effect in mass productions. The multilayer piezoelectric actua-tors had no defects such as diffusions of internal electrode to ceramic bodies and shortages of internal electrodes. The multilayer piezoelectric actuators did not show the crack in the ceramics parts and the gapping phenomena in the external eletrodes when Ag paste was used as external electrodes. The multilayer piezoelectric actuators showed a maximum displacement of 4${\mu}{\textrm}{m}$ at 100V dc voltage and kept the maximum displacement constant for 300 seconds. The multilayer piezoelectric actuators showed good matching properties between ceramic bodies and AgPd internal electrodes. We confirmed the possibility of large-scaled production of the multilayer piezoelectric actuators with superior electrical properties and cost down effect using 70Ag/30Pd paste as an internal electrodes.

• Journal of Welding and Joining
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• v.10 no.3
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• pp.63-72
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• 1992

The joining methods of ceramics to metals which can be expected to obtain high temperature strength are mainly classified into the solid-state diffusion bonding method and the active brazing method. Between these two, the solid-state diffusion bonding method is given attentions as substituting method for active brazing method due to being capable of obtaining higher bonding strength at high temperature and accurate bonding. In this paper, the solid-state diffusion bonding of $Al_{2}$O$_{3}$ ceramics to Ni-Cr-Mo alloy steel (SNCM21) using insert metal was carried out. The insert metal employed in this study was experimentally home-made, Ag-Cu-Ti alloy. Influence of several bonding parameters of $Al_{2}$O$_{3}$SNCM21 joint was quantitatively evaluated by bonding strength test, and microstructural analyses at the interlayer were performed by SEM/EDX. From above experiments, the optimum bonding condition of the solid-state diffusion bonding of $Al_{2}$O$_{3}$/SNCM21 using Ag-Cu-Ti insert metal was determined. Futhermore, high temperature strength and thermal-shock properties of $Al_{2}$O$_{3}$/SNCM21 joint were also examined. The results obtained are as follows. 1. The maximum bonding strength was obtained at the temperature of 95% melting point of insert metal. 2. The high temperature strength of $Al_{2}$O$_{3}$/SNCM21 joint appeared to bemaximum value at test temperature 500.deg.C and the bonding strength with increasingtemperature showed parabolic curve. 3. The strength of thermal-shocked specimens was far deteriorated than those of as-bonded specimens. Especially, water-quenched specimen after heated up to 600.deg. C was directly fractured in quenching.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.55-65
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• 1998

The oxidation behavior of Ag-36.8a%Cu-7.4at%Ti alloy brazed on Si3N4 substrate was investigated at 400, 500 and 600$^{\circ}C$ in air. Under this experimental condition Si3N4 and Ag were not oxidized whereas Cu and Ti among the brazing alloy components were oxidizied obeying the parabolic oxidation rate law. The activation energy of oxidation was found to be 80kj/ mol which was smaller than that of pure Cu owing to the presence of oxygen active element of Ti. The outer oxide scale formed from the initial oxidation state was always composed of Cu oxides which were known to be growing by the outward diffusion of Cu ions. As the oxidation progressed the concentration gradient occurred due to the continuous consumption of Cu as Cu oxides and consequently build-up of an Ag-enriched layer below the Cu oxides resulted in the formation of multiple oxide scales composed of Cu oxide (CuO) /Ag-enriched layer/Cu oxide (Cu2O) /Ag-enriched layer. Also the inward diffusing of oxygen through Cu oxide and Ag-enriched layers led to the formation of internal oxides of TiO2.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1959-1961
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• 1999

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.18-24
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• 2006

The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.500-506
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• 2024

The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10^-2 Ω^-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.