• 제목/요약/키워드: Ag diffusion

검색결과 180건 처리시간 0.03초

고추탄저병균 Colletotrichum gloeosporioides의 방제를 위한 길항 미생물의 분리 및 항진균 활성 (Screening of an Antagonistic Bacterium for Control of Red-pepper Anthracnose, Colletotrichum gloeosporioides)

  • 박성민;정혁준;유대식
    • 생명과학회지
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    • 제16권3호
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    • pp.420-426
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    • 2006
  • 노르웨이의 Oslo시 지역의 토양시료로부터 분리된 Bacillus sp. KMU-991를 이용하여 고추탄저병균인 Colletotruchum gloeosporioides KACC 40804에 대한 항진균 활성을 위한 배양 조건을 조사하였다. 항진균 물질의 생산은 기본배지로 TSB를 사용하였으며 탄소원으로 1.0% mannitol과 질소원으로 1.0% ammonium chloride를 첨가하였을 매 가장 높은 항진균 활성을 나타내었다. 배양조건으로는 $30^{\circ}C$, 180 rpm, 48시간 배양하였을 때 가장 높은 항진균 활성을 나타내었다. $30{\sim}60%$ ammonium sulfate 침전물을 첨가하였을 때 가장 양호한 항진균 활성을 나타내었으며 butanol을 이용하여 배양액 중에 존재하는 항진균 물질을 회수하여 다양한 작물병원성 곰팡이에 대한 spectrum을 조사한 결과 B. cinerea KACC 40573, C. orbiculare KACC 40808, F. oxysporum f. sp. radicus-lycopersici KACC 40537, P. cambivora KACC 40160, 그리고 R. solani AG-4 KACC 40142등에 대하여도 높은 항진균 활성을 나타내었다.

지방산과 인지질 혼합 유가초박막의 전기화학적 특성 (Electrochemical Properties of Organic Ultra Thin Films of Fatty Acid and Phospholipid Mixture)

  • 박근호;최성현;손태철;송주영
    • 한국응용과학기술학회지
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    • 제23권2호
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    • pp.137-146
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    • 2006
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films mixed with fatty acid (8A5H) and phospholipid (DLPE, DMPC, and DPPA). LB films of 8A5H monolayer and 8A5H-phospholipid mixture were deposited using the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured using cyclic voltammetry with three-electrode system, an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode at various concentrations(0.1, 0.5, and 1.0 mol/L) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350 mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rate was 50, 100, 150 and 200 mV/s, respectively. As a result, LB films of fatty acid and phospholipid (8A5H/DLPE and DPPA) appeared irreversible process were caused by only the reduction current from the cyclic voltammogram and LB film of 8A5H-DMPC mixture was found to be caused by a reversible oxidation-reduction process.

Analysis of Biocompatible TiO2 Oxide Multilayer by the XPS Depth Profiling

  • Jang, Jae-Myung;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.156-156
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    • 2017
  • In this work, analysis of biocompatible TiO2 oxide multilayer by the XPS depth profiling was researched. the manufacture of the TiO2 barrier-type multilayer was accurately performed in a mixed electrolyte containing HAp, Pd, and Ag nanoparticles. The temperature of the solution was kept at approximatively $32^{\circ}C$ and was regularly rotated by a magnetic stirring rod in order to increase the ionic diffusion rate. The manufactured specimens were carefully analyzed by XPS depth profile to investigate the result of chemical bonding behaviors. From the analysis of chemical states of the TiO2 oxide multilayer using XPS, the peaks are showed with the typical signal of Ti oxide at 459.1 eV and 464.8 eV, due to Ti 2p(3/2) and Ti 2p(1/2), respectively. The Pd-3d peak was split into Pd-3d(5/2) and Pd-3d(3/2)peaks, and shows two bands at 334.7 and 339.9 eV for Pd-3d3 and Pd-3d5, respectively. Also, the peaks of Ag-3d have been investigated. The chemical states consisted of the O-1s, P-2p, and Ti-2p were identified in the forms of PO42- and PO43-. Based on the results of the chemical states, the chemical elements into the TiO2 oxide multilayer were also inferred to be penetrated from the electrolyte during anodic process.The structure characterization of the modified surface were performed by using FE-SEM, and from the result of biological evaluation in simulated body fluid(SBF), the biocompatibility of TiO2 oxide multilayer was effective for bioactive property.

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Doping Controlled Emitter with a Transparent Conductor for Crystalline Si Solar Cells

  • 김민건;김현엽;최우진;이준신;김준동
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.590-590
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    • 2012
  • A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

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무전해 도금을 이용한 Si 태양전지 Ni-W-P/Cu 전극 형성 (Formation of Ni-W-P/Cu Electrodes for Silicon Solar Cells by Electroless Deposition)

  • 김은주;김광호;이덕행;정운석;임재홍
    • 한국표면공학회지
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    • 제49권1호
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    • pp.54-61
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    • 2016
  • Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

가공의치(架工義齒) 납착부(蠟着部)의 강도(强度)와 내부구조(內部構造)에 관(關)한 실험적(實驗的) 연구(硏究) (An experimental study of the strength and internal structure of solder joint of fixed partial denture)

  • 박상남;계기성
    • 대한치과보철학회지
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    • 제23권1호
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    • pp.39-59
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    • 1985
  • The purpose of this study was to investigate how gap distances of 0.13mm, 0.15mm, 0.20mm, and 0.30mm affects solder joint strength from gold alloys and nickel-chromium base alloys and to examine the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys. The tensile test specimens were prepared in the split stainless steel mold with a half dumbbell shape 2.5mm in diameter and l2mm in length. 6 pairs of specimens of each gap distance group of gold alloys and nickel-chromium base alloys were made and 48 pairs of all specimens were soldered with solder gold of 666 fineness. All soldered specimens were machined to a uniform diameter and then a tensile load was applied at a cross-head speed of 0.10mm/min using Instron Universal Testing Machine, Model 1115. The fractured specimens at solder gold of solder joint fracture with each gap distance of 0.13mm, 0.15mm, 0.20mm, and 0.30mm were examined under the Scanning Electron Microscope, JSM-35c and the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys was analyzed by Electron Probe Micro Analyzer. The results of this study were obtained as follows: 1. In case of soldering of gold alloys, the tensile strength between gold alloys showed $37.33{\pm}2.52kg/mm^2$ at 0.13, $39.14{\pm}3.35kg/mm^2$ at 0.15mm, $43.76{\pm}2.97kg/mm^2$ at 0.20mm, and $49.18{\pm}4.60kg/mm^2$ at 0.30mm. There was statistically significant difference at each gap distance, and so the greater increase of gap distance showed the greater tensile strength. 2. In case of soldering of nickel-chromium base alloys, the tensile strength between nickel-chromium base alloys showed $34.84{\pm}4.26kg/mm^2$ at 0.13mm, $37.25{\pm}2.49kg/mm^2$ at 0.15mm, $42.91{\pm}4.32kg/mm^2$ at 0.20mm, and $46.93{\pm}4.21kg/mm^2$ at 0.30mm. There was not statistically significant difference only between 0.13mm and 0.15mm and bet ween 0.20 mm and 0.30mm, but generally the greater increase of gap distance showed the greater tensile strength. 3. The greater increase of gap distance shoed less porosities in solder gold at solder joint fracture. 4. In solder gold Au, Cu, Ag, Zn, and Sn were composed and Au and Cu were mostly distributed uniformly. 5. In solder joints of solder gold and gold alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Au, Cu, Ag, Pt, and Pd were composed in gold alloys. Au and Cu of solder gold and gold alloys were mostly distributed uniformly and the diffusion of other elements except Pt and Pd around the solder joint was not almost found. In solder joints of solder gold and nickel-chromium base alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Ni, Cr, and Al were composed in nickel-chromium base alloys. Au and Cu of solder gold and Ni and Cr of nickel-chromium base alloys were mostly distributed uniformly and the diffusion of other elements except Cr around the solder joint was not almost found.

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Electromigration and Thermomigration in Flip-Chip Joints in a High Wiring Density Semiconductor Package

  • Yamanaka, Kimihiro
    • 마이크로전자및패키징학회지
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    • 제18권3호
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    • pp.67-74
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    • 2011
  • Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

Characterization and antimicrobial efficacy of Portland cement impregnated with silver nanoparticles

  • Nam, Ki Young
    • The Journal of Advanced Prosthodontics
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    • 제9권3호
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    • pp.217-223
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    • 2017
  • PURPOSE. This study investigated the effects of silver nanoparticle (SN) loading into hydraulic calcium silicate-based Portland cement on its mechanical, antibacterial behavior and biocompatibility as a novel dental bone substitute. MATERIALS AND METHODS. Chemically reduced colloidal SN were combined with Portland cement (PC) by the concentrations of 0 (control), 1.0, 3.0, and 5.0 wt%. The physico-mechanical properties of silver-Portland cement nanocomposites (SPNC) were investigated through X-ray diffraction (XRD), setting time, compressive strength, solubility, and silver ion elution. Antimicrobial properties of SPNC were tested by agar diffusion against Streptococcus mutans and Streptococcus sobrinus. Cytotoxic evaluation for human gingival fibroblast (HGF) was performed by MTS assay. RESULTS. XRD certified that SN was successfully impregnated in PC. SPNC at above 3.0 wt% significantly reduced both initial and final setting times compared to control PC. No statistical differences of the compressive strength values were detected after SN loadings, and solubility rates of SPNC were below 3.0%, which are acceptable by ADA guidelines. Ag ion elutions from SPNC were confirmed with dose-dependence on the concentrations of SN added. SPNC of 5.0 wt% inhibited the growth of Streptococci, whereas no antimicrobial activity was shown in control PC. SPNC revealed no cytotoxic effects to HGF following ISO 10993 (cell viability > 70%). CONCLUSION. Addition of SN promoted the antibacterial activity and favored the bio-mechanical properties of PC; thus, SPNC could be a candidate for the futuristic dental biomaterial. For clinical warrant, further studies including the inhibitory mechanism, in vivo and long-term researches are still required.

이중 텍스쳐 구조를 적용한 선택적 에미터 태양전지의 특성 분석 (Fabrication of Double Textured Selective Emitter Si Solar Cell Usning Electroless Etching Process)

  • 김창헌;이종환;임상우;정채환
    • Current Photovoltaic Research
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    • 제2권3호
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    • pp.130-134
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    • 2014
  • We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

적층형 초전도 다심 선재 제조 (Fabrication of coated conductor stacked multi-filamentary wire)

  • 윤기수;하홍수;오상수;문승현;김철진
    • 한국초전도ㆍ저온공학회논문지
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    • 제14권1호
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    • pp.4-7
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    • 2012
  • Coated conductors have been developed to increase piece length and critical current for electric power applications. Otherwise, Many efforts were carried out to reduce AC loss of coated conductor for AC applications. Twisting and cabling processes are effective to reduce AC loss but, these processes can not be applied for tape shaped coated conductor. It is inevitable to have thin rectangular shape because coated conductor is fabricated by thin film deposition process on metal substrate. In this study, round shape superconducting wire was first fabricated using coated conductors. First of all, Ag coated conductor was used. coated conductor was slitted to several wires with narrow width below 1mm. 12ea slitted wires were parallel stacked on top of another until making up the square cross-section. The bundle of coated conductors was heat treated to stick on each other by diffusion bonding and then copper plated to make round shape wire. Critical current of round wire was measured 185A at 77K, self field.