• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.78-79
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• 2009

We have investigated low temperature sintering characteristics of organic Ag complex. Organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 30 to $80^{\circ}C$ and sintering time was varied from 1 to 228 hour. The sheet resistance was abruptly changed at $80^{\circ}C$-6h, $65^{\circ}C$-24h, $30^{\circ}C$-228 hour and the thickness of the coated film was significantly decreased. The sheet resistance of Ag films were about $0.53\;{\Omega}/{\square}$ at the $80^{\circ}C$ - 12hour.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.135-139
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• 2015

We present a fine patterning method of conductive lines on polyimide (PI) and glass substrates using silver (Ag) nanoparticles based on laser scanning. Controlled laser irradiation can realize selective sintering of conductive ink without damaging the substrate. Thus, this technique easily creates fine patterns on heat-sensitive substrates such as flexible plastics. The selective laser sintering of Ag nanoparticles was managed by optimizing the conditions for the laser scan velocity (1.0-20 mm/s) and power (10-150 mW) in order to achieve a small gap size, high electrical conductivity, and fine roughness. The fabricated electrodes had a minimum channel length of $5{\mu}m$ and conductivity of $4.2{\times}10^5S/cm$ (bulk Ag has a conductivity of $6.3{\times}10^5S/cm$) on the PI substrate. This method was used to successfully fabricate an organic field effect transistor with a poly(3-hexylthiophene) channel.

• Journal of Powder Materials
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• v.20 no.2
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• pp.120-124
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• 2013

This study is carried out to develop the new process for the fabrication of ultra-fine electrodes on the flexible substrates using superhydrophobic effect. A facile method was developed to form the ultra-fine trenches on the flexible substrates treated by plasma etching and to print the fine metal electrodes using conductive nano-ink. Various plasma etching conditions were investigated for the hydrophobic surface treatment of flexible polyimide (PI) films. The micro-trench on the hydrophobic PI film fabricated under optimized conditions was obtained by mechanical scratching, which gave the hydrophilic property only to the trench area. Finally, the patterning by selective deposition of ink materials was performed using the conductive silver nano-ink. The interface between the conductive nanoparticles and the flexible substrates were characterized by scanning electron microscope. The increase of the sintering temperature and metal concentration of ink caused the reduction of electrical resistance. The sintering temperature lower than $200^{\circ}C$ resulted in good interfacial bonding between Ag electrode and PI film substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.427-427
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• 2013

잉크젯 프린팅 방법은 전도성 고분자 물질을 잉크 재료로 사용하여 전자 소자의 전극 패턴을 형성할 수 있으며 비접촉, drop-on-demand 공정으로 현재 많은 관심을 받고 있는 연구 분야이다. Ag는 $1.59{\mu}m{\cdot}cm$의 저항을 나타내는 가장 낮은 저항을 가지고 있는 물질 중의 하나이며, Ag 전도성 잉크는 고전도 패턴의 형성을 위해 현재 많이 사용되고 있는 물질이다. 본 연구에서는 a-IGZO 박막을 채널층으로 사용하여 Ag S/D 전극을 잉크젯 프린팅 방법으로 형성하여 산화물 트랜지스터를 제작하였다. a-IGZO 채널층은 $SiO_2$가 증착된 Si 기판위에 스퍼터링 방식으로 80 nm의 두께로 형성하였다. Ag S/D 전극은 10 pl의 카트리지가 장착된 Fujifilm Dimatix DMP 2800 장비를 사용하여 형성하였으며, 프린팅 후 $130^{\circ}C$로 20분간 열처리를 하였다. Fig. 1은 잉크젯 프린팅된 Ag S/D을 가진 a-IGZO의 트랜지스터 특성을 보여준다. 채널 W/L가 90/$50{\mu}m$ 구간에서 드레인 전압이 50 V 일때, 전계효과이동도 $0.27cm^2$/Vs, 문턱전압 6.03 V, 문턱전압 아래의 기울기 값은 2.06 V/dec를 얻었다. 이와 같은 특성은 잉크젯 프린팅 방법으로 Ag S/D 전극을 형성함으로써 산화물 TFT에서 잉크젯 프린팅 방식의 다양한 응용 가능성을 확인할 수 있었다.

• Journal of Information Display
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• v.12 no.4
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• pp.213-217
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• 2011

Printing technologies were applied to fabricate a flexible organic thin-film transistor (OTFT) backplane for electrophoretic displays (EPDs). Various printing processes were adopted to maximize the figures of each layer of OTFT: screen printing combined with reverse offset printing for the gate electrodes and scan bus lines with Ag ink, inkjet for the source/drain electrodes with glycerol-doped Poly (3,4-ethylenedioxythiophene): Poly (styrenesulfonate) (PEDOT:PSS), inkjet for the semiconductor layer with Triisopropylsilylethynyl (TIPS)-pentacene, and screen printing for the pixel electrodes with Ag paste. A mobility of $0.44cm^2/V$ s was obtained, with an average standard deviation of 20%, from the 36 OTFTs taken from different backplane locations, which indicates high uniformity. An EPD laminated on an OTFT backplane with $190{\times}152$ pixels on an 8-in panel was successfully operated by displaying some patterns.