• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.135-135
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• 2013

The electronic and adsorption structures of Mg and p-tert-butylcalix[4]arene (p-TBCA) adsorbed onto a Ge(100) surface under a variety of sample conditions were characterized using high-resolution photoemission spectroscopy (HRPES) and their corresponding DFT calculation results. Interestingly, after 0.10 ML p-TBCA molecules had been adsorbed onto a Ge(100) surface, subsequent adsorption of a small amount of metallic Mg (~0.10 ML) resulted in the formation of a capped structure inside the pre-adsorbed p-TBCA molecules. The adsorption structures resulting from further deposition of Mg (~0.50 ML) onto the Ge(100) surface were monitored based on the surface charge state and Mg 2s core level spectrum. Work function measurements clearly indicated the electronic structures of the Mg and p-TBCA adsorbed onto the Ge(100) surface. Moreover, we confirmed that three different adsorption structures are experimentally favorable at room temperature through DFT calculation results.

• Membrane and Water Treatment
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• 제12권1호
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• pp.23-35
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• 2021

A POM-membrane was fabricated by immobilizing a keggin type polyoxometalate (POM) H5PV2Mo10O40 onto the surface of microporous flat-sheet polymeric polyvinylidene fluoride (PVFD) membrane using a chemical deposition method. The POM-membrane was characterized by FT-IR, SEM and EDX to confirm existing of the POM onto the membrane surface. The POM-membrane was used to remove an anionic textile dye (Reactive Black 5 named as an RB5) from aqueous phases with a cross-flow membrane filtration and a batch adsorption system. The dye removal efficiency of the POM-membrane using the cross-flow membrane filtration system and the batch adsorption system was about 88% and 98%, respectively. The influence factors such as contact time, adsorbent dosage, pH, and initial dye concentration were investigated to understand the adsorption mechanism of the RB5 dye onto the POM-membrane. To find the best fitting isotherm model, Langmuir, Freundlich, BET and Harkins-Jura isotherm models were used to analyze the experimental data. The isotherm analysis showed that the Langmuir isotherm model was found to the best fit for the adsorption data (R2 = 0.9982, qmax = 24.87 mg/g). Also, adsorption kinetic models showed the pseudo second order kinetic model was found the best model to fit the experimental data (R2 = 0.9989, q = 8.29 mg/g, C0 = 15 ppm). Moreover, after four times regeneration with HNO3 acid, the POM-membrane showed high regenerability without losing dye adsorption capacity.

• 한국표면공학회지
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• 제22권3호
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• pp.135-144
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• 1989

Aluminium Oxide was deposited with a C.V.D.-technique on various substrates. The effects of various treating condition such as temperature, time, heat resistance and composition of substrates were investigated in order to understand the relationship of structure, property and process. Grain size depends upon the activity of adsorption siite and coarsened with increasing temperature and time. Deposition rate decreases in order of electrolytic iron, carbon steel STS430 and STS304, since the active site for adsorption of reactant was more decreased for Cr and Ni than Fe. Oxidation resistance of alumina coated specimens improved markedely and that of stainless steel was prominent.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.314-316
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• 1997

We have studied the epitaxial growth and electrical properties of $Si_{0.8}Ge_{0.2}$, films on Si substrates at $550^{\circ}C$ by LPCVD. In a low $PH_3$, partial pressure region such as below 1.25 mPa, the phosphorus doping concentration increased proportionally with increasing $PH_3$ partial pressure while the deposition rate and the Ge fraction x were constant. In a higher $PH_3$ partial pressure region, the phosphorus doping concentration and the deposition rate decreased, while the Ge fraction slightly increased. The dependence of P incorporation rate on the $PH_3$ partial pressure was similar to the phosphorus doping concentration. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_4$ adsorption/reaction and the $GeH_4$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_4$ than on $GeH_4$. In a higher $PH_3$ partial pressure region, the deposition is largely controlled by surface coverage effect of phosphorus atoms.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.437-440
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• 1998

We studied phosphorus doping effect on the epitaxial growth of $Si_{1-x}Ge_{x}$ film with high Ge fraction on Si substates at 550.deg. C by LPCVD. In a low $Ph_{3}$ partial pressure region such as below 1.25 mPa, the phosphorus dopant concentration increased linearly with increasing $PH_{3}$ partial pressure while the deposition rate and the Ge fraction were constant. In a higher $PH_{3}$ partial pressure region, the phosphorus dopant concentration and the deposition rate decreased, while the Ge fraction slightly increased. The deposition arate and the Ge fraction increased with increasing $GeH_{4}$ partial pressure while the phophours dopant concentration decreased. But the increasing rate of Ge fraction with incrasing $PH_{3}$ partial pressure was reduced at a high $GeH_{4}$ partial pressure. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_{4}$ adsorption/reasction and the $GeH_{4}$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_{4}$ than on $GeH_{4}$. In a higher $PH_{3}$ partial pressure region, the epitaxial growth is largely controlled by surface coverage effect of phosphorus atoms. The phosphorus surface coverage was slimited at a high $GeH_{4}$ partial pressure because adsorbed Ge atoms effectively suppresses the adsorption of phosphorus atoms.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.519-523
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• 2013

When atomic layer deposition (ALD) is performed on a porous material by using an organometallic precursor, minimum exposure time of the precursor for complete coverage becomes much longer since the ALD is limited by Knudsen diffusion in the pores. In the previous report by Min et al. (Ref. 23), shrinking core model (SCM) was proposed to predict the minimum exposure time of diethylzinc for ZnO ALD on a porous cylindrical alumina monolith. According to the SCM, the minimum exposure time of the precursor is influenced by volumetric density of adsorption sites, effective diffusion coefficient, precursor concentration in gas phase and size of the porous monolith. Here we modify the SCM in order to consider undesirable adsorption of byproduct molecules. $TiO_2$ ALD was performed on the cylindrical alumina monolith by using titanium tetrachloride ($TiCl_4$) and water. We observed that the byproduct (i.e., HCl) of $TiO_2$ ALD can chemically adsorb on adsorption sites, unlike the behavior of the byproduct (i.e., ethane) of ZnO ALD. Consequently, the minimum exposure time of $TiCl_4$ (~16 min) was significantly much shorter than that (~71 min) of DEZ. The predicted minimum exposure time by the modified SCM well agrees with the observed time. In addition, the modified SCM gives an effective diffusion coefficient of $TiCl_4$ of ${\sim}1.78{\times}10^{-2}\;cm^2/s$ in the porous alumina monolith.

• 한국진공학회지
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• 제21권2호
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• pp.106-112
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• 2012

본 연구에서는 톨루엔 등의 휘발성 유기물의 흡착량을 정성, 정량적으로 연구할 수 있는 새로운 장비를 구축하였으며, 이를 이용하여 기존의 탄소를 기반으로 하는 다양한 흡착제와 원자층 증착으로 만든 $TiO_2$ 박막구조의 톨루엔 흡착에 대한 연구를 진행하였다. $TiO_2$ 박막구조의 흡착제가 기존의 탄소기반 흡착제보다 톨루엔 흡착량이 뛰어난 것을 입증하였으며, 이는 원자층증착으로 제조한 $TiO_2$ 박막 표면의 높은 농도의 OH 그룹의 높은 톨루엔 친화력과 연관성이 있는 것으로 나타났다. 또한 본장비를 이용하여 가역적인 흡착과 비가역적인 흡착을 구분할 수 있음을 보여주었다.

• 센서학회지
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• 제32권3호
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• pp.147-153
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• 2023

Metal-organic frameworks (MOFs) of cobalt gallate were synthesized and deposited on gold electrodes using self-assembly monolayers (SAMs) and hydrothermal processing. These MOF films exhibit strong adsorption capabilities for gaseous particulates, and the use of SAMs allows the synthesis and deposition processes to be completed in a single step. When cobalt gallate is mixed with SAMs, a coordination bond is formed between the cobalt ion and the carboxylate or hydroxyl groups of the SAMs, particularly under hydrothermal conditions. Additionally, the quartz crystal microbalance (QCM) gas sensor accurately measures the number of particulates adsorbed on the MOF films in real-time. Thus, the QCM gas sensor is a valuable tool for quantitatively measuring gases, such as SO₂, NO₂, and CO₂. Furthermore, the QCM MOF film gas sensor was more effective for gas adsorption than the MOF particles alone and allowed the accurate modeling of gas adsorption. Moreover, the QCM MOF films accurately detect the adsorption-desorption mechanisms of SO₂ and NO₂, which exist as gaseous particulate matter, at specific gas concentrations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.484-488
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• 1997

BSCCO thin film is fabricated cia both processes of co-deposition and layer-by-layer deposition at an ultralow growth rate using ion beam sputtering method. The adsorption of Bi atom and the appearance of Bi-2212 phase shows large differance between both processes. It is found that the resident time of Bi vapor species on the surface of the substrate strongly dominates the film composition and the formation of the structure.

• 한국진공학회지
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• 제5권4호
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• pp.354-358
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• 1996

precuror alternating metalorganic chemical vapor deposition(PAMOCVD)에 의한 InGaAs의 성장시에 높은 indium의 유입이 관찰되었다. gallium과 indium의 전구물질의 분해의 차이 그리고 이에따른 분해된 전구물질 분자의 흡착행동의 차이를 고려함으로써 PAMOCVD 성장시의 결정내로의 높은 indium유입의 mechanism을 제안하였다.