• 대한금속재료학회지
• /
• 제47권3호
• /
• pp.202-208
• /
• 2009

The effects of aging time on the microstructure and shear strength of the Low Temperature Co-fired Ceramic (LTCC)/Ag pad/Electroless Nickel Immersion Gold (ENIG)/BGA solder joints were investigated through isothermal aging at $150^{\circ}C$ for 1000 h with conventional Sn-37Pb and Sn-3Ag-0.5Cu. $Ni_3Sn_4$ intermetallic compound (IMC) layers was formed at the interface between Sn-37Pb solder and LTCC substrate as-reflowed state, while $(Ni,Cu)_3Sn_4$ IMC layer was formed between Sn-3Ag-0.5Cu solder and LTCC substrate. Additional $(Cu,Ni)_6Sn_5$ layer was found at the interface between the $(Ni,Cu)_3Sn_4$ layer and Sn-3Ag-0.5Cu solder after aging at $150^{\circ}C$ for 500 h. Thickness of the IMC layers increased and coarsened with increasing aging time. Shear strength of both solder joints increased with increasing aging time. Failure mode of BGA solder joints with LTCC substrate after shear testing revealed that shear strength of the joints depended on the adhesion between Ag metallization and LTCC. Fracture mechanism of Sn-37Pb solder joint was a mixture of ductile and pad lift, while that of Sn-3Ag-0.5Cu solder joint was a mixture of ductile and brittle $(Ni,Cu)_3Sn_4$ IMC fracture morphology. Failure mechanisms of LTCC/Ag pad/ENIG/BGA solder joints were also interpreted by finite element analyses.

• 대한금속재료학회지
• /
• 제49권4호
• /
• pp.321-328
• /
• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Restorative Dentistry and Endodontics
• /
• 제46권4호
• /
• pp.55.1-55.9
• /
• 2021

Objectives: The purpose of this systematic review was to collect and discuss the technique of adhesive systems application on dentin substrate under electric current. Materials and Methods: The first search strategy was based on data available at PubMed, LILACS, Scielo, Scopus, and Cochrane Library, using a combination of descriptors such as "dentin bond agents OR adhesive system AND electric current OR electrobond" or "dentin bonding agents OR dentin bonding agent application OR adhesive system AND electric current OR electrobond", with no limit regarding the publication year. The second search strategy was based on the articles' references found previously. An additional search strategy was applied that concerned the proposed theme in the SBU-UNICAMP (Unicamp's Library System Institutional Repository). Results: Twelve studies published between 2006 and 2020 were found. The analyses of the selected studies showed that the use of electric current during adhesive systems application on dentin, whether conventional or self-conditioning, increases resinous monomer infiltration in the dentin substrate, which improves the hybridization processes and the bond strength of the restorative material to dentin. Conclusions: Despite the favorable results related to the use of this technique, there is still no specific protocol for the application of adhesive systems under electric current.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제10권7호
• /
• pp.2892-2913
• /
• 2016

Network virtualization promises to play a dominant role in shaping the future Internet by overcoming the Internet ossification problem. However, due to the injecting of additional virtualization layers into the network architecture, several new security risks are introduced by the network virtualization. Although traditional protection mechanisms can help in virtualized environment, they are not guaranteed to be successful and may incur high security overheads. By performing the virtual network (VN) embedding in a security-aware way, the risks exposed to both the virtual and substrate networks can be minimized, and the additional techniques adopted to enhance the security of the networks can be reduced. Unfortunately, existing embedding algorithms largely ignore the widespread security risks, making their applicability in a realistic environment rather doubtful. In this paper, we attempt to address the security risks by integrating the security factors into the VN embedding. We first abstract the security requirements and the protection mechanisms as numerical concept of security demands and security levels, and the corresponding security constraints are introduced into the VN embedding. Based on the abstraction, we develop three security-risky modes to model various levels of risky conditions in the virtualized environment, aiming at enabling a more flexible VN embedding. Then, we present a mixed integer linear programming formulation for the VN embedding problem in different security-risky modes. Moreover, we design three heuristic embedding algorithms to solve this problem, which are all based on the same proposed node-ranking approach to quantify the embedding potential of each substrate node and adopt the k-shortest path algorithm to map virtual links. Simulation results demonstrate the effectiveness and efficiency of our algorithms.

• The Korean Journal of Ceramics
• /
• 제3권2호
• /
• pp.73-81
• /
• 1997

In this paper, it is intended to present more reproducible and quantitative method for adhesion assemssement. In scratch test, micromechanical analysis on the stress state beneath the indenter was carried out considering the additional blister field. The interface adhesion was quantified as work of adhesion through Griffith energy approach on the basis of the analyzed stress state. The work of adhesion for DLC film/WC-Co substrate calculated through the proposed analysis shows the identical value regardless of distinctly different critical loads measured with the change of film thickness and scratching speed. On the other hand, uniaxial loading was imposed on DCL film/Al substrate, developing the transverse film cracks perpendicular to loading direction. Since this film cracking behavior depends on the relative magnitude of adhesion strength to film fracture strength, the quantification of adhesion strength was given a trial through the micromechanical analysis of adhesion-dependence of film cracking patterns. The interface shear strength can be quantified from the measurement of strain $\varepsilon$s and crack spacing $\lambda$ at the cessation of film cracking.

• Bulletin of the Korean Chemical Society
• /
• 제32권6호
• /
• pp.1939-1944
• /
• 2011

The nucleophilic substitution reactions of bis(Y-aryl) chlorophosphates (1) with substituted anilines and deuterated anilines are investigated kinetically in acetonitrile at 35.0 $^{\circ}C$. The kinetic results of 1 are compared with those of Y-aryl phenyl chlorophosphates (2). The substrate 1 has one more identical substituent Y compared to substrate 2. The cross-interaction between Y and Y, due to additional substituent Y, is significant enough to result in the change of the sign of cross-interaction constant (CIC) from negative ${\rho}_{XY}$ = -1.31 (2) to positive ${\rho}_{XY}$ = +1.91 (1), indicating the change of reaction mechanism from a concerted $S_N2$ (2) to a stepwise mechanism with a rate-limiting leaving group departure from the intermediate (1). The deuterium kinetic isotope effects (DKIEs) involving deuterated anilines ($XC_6H_4ND_2$) show secondary inverse, $k_H/k_D$ = 0.61-0.87. The DKIEs invariably increase as substituent X changes from electron-donating to electron-withdrawing, while invariably decrease as substituent Y changes from electron-donating to electron-withdrawing. A stepwise mechanism with a rate-limiting bond breaking involving a predominant backside attack is proposed on the basis of positive sign of ${\rho}_{XY}$ and secondary inverse DKIEs.

• Journal of Applied Biological Chemistry
• /
• 제48권4호
• /
• pp.187-192
• /
• 2005

Influence of herbicide oxadiazon on soil microbial activity and nitrogen dynamics was evaluated. Soil samples were treated with oxadiazon at field and tenfold field rates and incubated. Organic amendment was added as an additional substrate for soil microorganisms. Tenfold field rate oxadiazon stimulated substrate-induced respiration (SIR) and dehydrogenase activity (DHA) in amended soil as compared to unamended soil and control treatment. Soil urease activity was not affected by oxadiazon treatment. In both amended and unamended soils, treatment of the herbicide at higher rate had not significant influence on $NH_4$-N and $NO_3$-N concentrations. Higher dose of oxadiazon was degraded in both soils, but dissipation rate in amended soil was higher than unamended soil, with half-lives ($t_{1/2}$) of 23.1 and 138.6 days, respectively. Recommended field rate did not affect microbial activity and nitrogen dynamics in soil ecosystem. Results showed influence of oxadiazon on cycling processes of nitrogen in soil was not significant however its effect on microbial activity was a tendency depending on addition of organic amendment to soil.

• 한국수소및신에너지학회논문집
• /
• 제22권2호
• /
• pp.206-212
• /
• 2011

The effect of process parameters on $H_2$ production from water vapor excited by HF ICP has been qualitatively examined for the first time. With the increase of ICP power, characteristics of $H_2$ production from $H_2O$ dissociation in plasma was divided into 3 regions according to both reaction mechanism and energy efficiency. At the edge of region (II) in the range of middle ICP power, energy effective hydrogen production from $H_2O$ plasma can be achieved. Furthermore, within the region (II) power condition, heating of substrate up to $500^{\circ}C$ shows additional increase of 70~80% in $H_2$ production compared to $H_2O$ plasma without substrate heating. This study have shown that combination of optimal plasma power (region II) and wall heating (around $500^{\circ}C$) is one of effective ways for $H_2$ production from $H_2O$.

• 한국전기전자재료학회논문지
• /
• 제30권10호
• /
• pp.609-614
• /
• 2017

The proposed stretchable transparent electrodes based on silver nanowires (AgNWs) were prepared on a polyurethane (PU) substrate. In order toavoid the surface roughness caused by the silver nanowires, a titanium oxide ($TiO_2$) buffer layer was addedby coating and heating the organometallic sol-gel solution. The fabricated stretchable electrodes showedan electrical sheet resistance of $24{\Omega}sq^{-1}$, 78% transmittance at 550 nm, and an average surface roughness below 5 nm. Furthermore, the AgNW-based electrode maintained its initial electrical resistance under 130% strain testing conditions, without the assistance of additional conductive polymer layers. In this paper, the critical role of the $TiO_2$ buffer layer between the AgNW network and the PU substrate has been discussed.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.824-828
• /
• 1996

Co-based alloy thin films ddeposited by fcing targets sputtering(FTS) were investigated for use in high-density magnetic recording media to determine how their magnetic properties are dependent on the sputtering conditions, and thus to find appropriate parameters that allow the sputtering and thin films to meet the specificiations for magnetic properties. FTS can discharge at lower working gas pressure than other sputtering methods such as dcmagnetron sputteing because the plasma is sufficiently confined by a magnetic field applied perpendicular to both of the target planes, which results in plasma-free substrates. Co-Cr-Ta films were deposited by FTS on glass and silicon substrates at substrate temperature between room temperature and $350^{\circ}C$, and at argon gas pressure between 0.1 and 10mTorr. The films were also deposited on polyimide tapes at substrate temperature of $130^{\circ}C$ and argon gas pressure of 1 mTorr. The effective advantages of Ta as an additional element were investigated, using the same films on the tapes. As a result of the experiment, it was found that better magnetic properties were obtained in the ranges of higher temperature and lower argon gas pressure with background pressure in thr range of $1.5 \times 10^{-6}$ Torr. Ta addition at 2 to 4 atomic percent almost havled the Co-Cr grain sizes, indicating that Ta addition at an appropriate atomic percent is effective for improving the microstructure and characteristics of Co-Cr films.