• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.4
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• pp.20-25
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• 1978

Two augmented integrators are sufficient as memory elements to realize an arbitrary second-order voltage transfer funtion which has complex poles in left-half S-plane, where S is a complex variable. The augmented integrator is characterized by transfer funtion B/(S+A), where A and B are real constant.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.402-403
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• 2009

A variety of power reduction technologies is introduced and the benefits of the technologies are discussed. PenTile$^{(R)}$ DBLC (Dynamic Brightness LED Control) combined with SABC (Sensor-Based Adaptive Brightness Control) enables to achieve the average LED power consumption to one third. The panel power reduction of 25% can be achieved with low power driving technology, ALS (Active Level Shifter). MIP (Memory In Pixel) is expected to be useful in transflective display because the whole display area can be utilized in reflective mode with power consumption of 1mW.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.141-143
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• 2004

In this present the transient control of SBS chaos induced instability in Brillouin-active fiber systems is described. The inherent optical feedback by the backscattered Stokes wave in optical fiber systems leads to instabilities in the form of optical chaos. At weak power, the nature of the Brillouin instability can occur at before threshold. At strong power, the temporal evolution above threshold is periodic and at higher intensity can become chaotic. Multistable periodic states, makes transition to logic 'on' or 'off'. It can make theoretically potential large memory capacity.

• Proceedings of the Korea Information Processing Society Conference
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• 2021.11a
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• pp.1203-1206
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• 2021

소음은 난청, 스트레스 등의 원인이 된다. 본 연구에서는 ANC(Active Noise Cancellation)을 바탕으로, 기술적인 방법을 통해 소음을 저감 시키는 스피커를 구현하였다. ANC 란 소음 주파수의 위상을 180° 변환하여 주파수와 레벨이 동일한 역 소음을 발생시켜 주변 소음을 저감, 차단하는 기술이다. 현재 시중 제품들에 적용되는 일반적인 ANC 의 경우, 피드백(Feedback) 방식이라는 점과 시간 지연(Time gap)이 발생한다는 한계가 있다. 이를 보완하기 위해 AI 학습으로 소음을 미리 예측하여 시간 지연을 줄이는 방법을 고안했다. 순환 신경망(RNN)의 장기의존성 문제를 해결하는 시계열 예측 딥러닝 알고리즘인 LSTM(Long Short-Term Memory Network) 모델을 사용하였다. 또한, AI 학습 효율을 향상시킬 수 있는 하드웨어 장비들을 활용하였다.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• 한국약용작물학회:학술대회논문집
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• 2011.09a
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• pp.31-45
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• 2011

The amyloid ${\beta}$-peptide ($A{\beta}$), which originates from the proteolytic cleavage of amyloid precursor protein (APP), plays a central role in the pathogenesis of Alzheimer's disease (AD). Mounting evidence indicates that different species of $A{\beta}$, such as $A{\beta}$ oligomers and fibrils, may contribute to AD pathogenesis via distinct mechanisms at different stages of the disease. Importantly, elevation and accumulation of soluble $A{\beta}$ oligomers closely correlate with cognitive decline and/or disease progression in animal models of AD. In agreement with these studies, oligomers of $A{\beta}$ have been shown to directly affect synaptic plasticity, a neuronal process that is known to be essential for memory formation. Our previous studies showed that $A{\beta}$ induces the breakdown of phosphatidylinositol 4,5-bisphosphate (PI(4,5)P2), a phospholipid that regulates key aspects of neuronal function. PI(4,5)P2 breakdown was found to be a key step toward synaptic and memory dysfunction in a mouse model of AD. To this end, we seek to identify small molecules that could elevate the levels of PI(4,5)P2 and subsequently block $A{\beta}$ oligomer-induced breakdown of PI(4,5)P2 and synaptic dysfunction.. We found that (20S)Rg3, an active triterpene glycoside from heat-processed ginseng, serves as an agonist for phosphatidylinositol 4-kinase IIalpha (PI4KIIalpha), which is a lipid kinase that mediates a rate-limiting step in PI(4,5)P2 synthesis. Consequently, (20S)Rg3 stimulates PI(4,5)P2 synthesis by directly stimulating the activity of PI4KIIalpha. Interestingly, treatment of a mouse model of AD with (20S)Rg3 leads to reversal of memory deficits. Our data suggest that the PI(4,5)P2-promoting effects of (20S)Rg3 may help mitigate the cognitive symptoms associated with AD.

• Journal of KIISE
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• v.42 no.3
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• pp.379-389
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• 2015

With the advent of non-volatile memories such as Phase Change Memory (PCM or PRAM) and Magneto Resistive RAM (MRAM), active studies have been carried out on how to replace Dynamic Random-Access Memory (DRAM) with PRAM. In this paper, we study both endurance and performance issues of existing join algorithms that are based on PRAM-based computer systems and have been widely used until now: Block Nested Loop Join, Sort-Merge Join, Grace Hash Join, and Hybrid Hash Join. Our experimental results show that the existing join algorithms need to be redesigned to improve both the endurance and performance of PRAMs. To the best of our knowledge, this is the first research to scientifically study the results of the four join algorithms running on PRAM-based systems. In this work, our main contribution is the modeling and implementation of a PRAM-based simulator for a comparative study of the existing join algorithms.

• Biomolecules & Therapeutics
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• v.23 no.6
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• pp.571-581
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• 2015

${\beta}$-asarone (BAS) is an active component of Acori graminei rhizoma, a traditional medicine used clinically in treating dementia and chronic stress in Korea. However, the cognitive effects of BAS and its mechanism of action have remained elusive. The purpose of this study was to examine whether BAS improved spatial cognitive impairment induced in rats following chronic corticosterone (CORT) administration. CORT administration (40 mg/kg, i.p., 21 days) resulted in cognitive impairment in the avoidance conditioning test (AAT) and the Morris water maze (MWM) test that was reversed by BAS (200 mg/kg, i.p). Additionally, as assessed by immunohistochemistry and RT-PCR analysis, the administration of BAS significantly alleviated memory-associated decreases in the expression levels of brain-derived neurotrophic factor (BDNF) and cAMP-response element-binding protein (CREB) proteins and mRNAs in the hippocampus. Also, BAS administration significantly restored the expression of Bax and Bcl-2 mRNAs in the hippocampus. Thus, BAS may be an effective therapeutic for learning and memory disturbances, and its neuroprotective effect was mediated, in part, by normalizing the CORT response, resulting in regulation of BDNF and CREB functions and anti-apoptosis in rats.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.8
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• pp.1083-1089
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• 2010

Shape memory alloys (SMAs) are smart materials. The unique characteristics of SMAs enable the production of large force and displacement. Hence, SMAs can be used in many applications such as in actuators and active structural acoustic controllers; the SMAs can also be used for dynamic tuning and shape control. A SMA torque tube actuator consisting of SMA tubes and superelastic springs is proposed, and the behaviors of the actuator are investigated. From the results of heat transfer analysis, it is proved that the SMA torque tube actuator with both resistive heating of SMA itself and a separate conventional heating rod in the tube core has good performance. The behavior of an actuator system was analyzed by performing a contact analysis, and the twisting motion was noticed when checking the actuation. 3D SMA nonlinear constitutive equations were formulated numerically and implemented by performing a nonlinear analysis by using Abaqus UMAT.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.