• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.169-171
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• 1989

The curved active layer inner stripe(CALIS) laser diode has been developed. The tight confinements of current and carrier result in low thershold current(20-30mA) with stable fundamental transverse mode operation up to the output power of 30mW CW.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.257-260
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• 2002

This paper describes the pixel of AMOLED(act ive matrix organic light emitting diode) driving circuit by poly-sl technology. The area per pixel is 278um$\times$278um in 120$\times$160(2.2 inch) Driving the OLEDS with active matrix leads to the lower voltage operation, the lower peak pixel currents and the display with much greater efficiency and brightness The role of the active matrix is to provide a constant current throughout the entire frame time and is eliminating the high currents encountered In the passive matrix approach, This design can support the high resolutions expected by the consumer because the current variation specification is norestricted. The pixel has been designed driving TFT threshold voltage cancellation circuit and wide aperture ratio circuit that communizes 4 pixel. The test simulation results and layout are 11% per threshold-current var Eat ion and 12.5% the aperture ratio of increase.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 추계학술대회
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• pp.429-432
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• 2017

본 논문에서는 고성능 비교기를 이용한 전파정류 애너지 하베스팅 회로를 설계하였다. 설계된 회로는 크게 Negative Voltage Converter, Active Diode단으로 나뉜다. 그리고 Active Diode단에 포함된 비교기는 3-stage 형태로 구현 하였으며 Pre-amplification, Decision circuit, Output buffer단으로 나뉜다. 이 비교기는 Propagation delay를 줄이고 하베스팅 회로의 전압 및 전력 효율을 향상 시키는 것이 주된 목적이다. 제안된 회로는 Magna $0.35{\mu}m$ CMOS 공정으로 설계하였으며, 모의실험을 통해 동작을 검증하였다. 설계된 에너지 하베스팅 회로의 칩 면적은 $612{\mu}m{\times}444{\mu}m$이다.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.49-52
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• 2007

Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.1857-1859
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• 1998

This paper proposes a circuit technique that reduces losses cauased by reverse-recovery characteristics of the diode in converters. In high voltage, high power, Reverse recovery characteristics of the diode gives large stresses to switching devices. To solve the problem, we propose a circuit with active snubber between diode and switch. By controling di/dt rate of thr diode, the proposed technique reduces the losses and the stresses of switching devices.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권11호
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• pp.521-528
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• 2003

A varactor diode was utilized in order to expand variable range of the natural oscillation frequency of an active phased-array antenna. We have conformed experimentally that the variable range of the natural oscillation frequency was expanded about three times in the oscillator controlled by the varactor diode. When frequency difference was given to the oscillators in the two elements antenna system, phase difference was appeared between the oscillators. The 2-, 3-, 5-elements patch antenna array was composed for the beam scanning experiments. All the above patch antennas showed good phased array characteristics. The experimental results are as follows that the scanning angle of the 2-elements array antenna is 28.6$^{\circ}$, the 3-elements array antenna is 29.4$^{\circ}$, and the 5-elements array antenna is 26.2$^{\circ}$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.85-91
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• 2008

A Boost Power Factor Correction (PFC) Converter employing Zero Voltage Switching (ZVS) based Compound Active Clamping (CAC) technique is presented in this paper. An Electro Magnetic Interference (EMI) Filer is connected at the line side of the proposed converter to suppress Electro Magnetic Interference. The proposed converter can effectively reduce the losses caused by diode reverse recovery. Both the main switch and the auxiliary switch can achieve soft switching i.e. ZVS under certain condition. The parasitic oscillation caused by the parasitic capacitance of the boost diode is eliminated. The voltage on the main switch, the auxiliary switch and the boost diode are clamped. The principle of operation, design and simulation results are presented here. A prototype of the proposed converter is built and tested for low input voltage i.e. 15V AC supply and the experimental results are obtained. The power factor at the line side of the converter and the converter efficiency are improved using the proposed technique.

• ETRI Journal
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• 제26권5호
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• pp.509-511
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• 2004

This paper describes a novel current driving circuit for an active matrix organic light emitting diode (AMOLED). The proposed current driving circuit has a lower power consumption and higher chip density for the AMOLED display compared with the conventional one because all elements operate at a normal voltage and are shielded from the high voltage of the panel. The chip size and power consumption of the current driving circuit for an AMOLED can be improved by about 30 to 40% and 10 to 20%, respectively, compared with the conventional one.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Journal of information and communication convergence engineering
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• 제8권3호
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• pp.263-266
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• 2010

In this paper, a novel defected ground structure (DGS) pattern with enhanced effective capacitance (varactor diode) and a hole in PCB center is presented. The increase in effective capacitance enables the new DGS pattern to achieve a lower resonance than the DGS pattern for the same etched square dimension. The hole in the center also can make resonator frequency lower with better characteristic. According to the tunable characteristic of varactor diode, the resonant frequencies can be tunable. Simulation results show that a lower resonance is achieved with active device, compared to a common DGS pattern.