• Title/Summary/Keyword: Active Switch

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Three-Phase Z-Source Hybrid Active Power Filter System (3상 Z-소스 하이브리드 능동전력필터 시스템)

  • Lim, Young-Cheol;Kim, Jae-Hyun;Jung, Young-Gook
    • The Transactions of the Korean Institute of Power Electronics
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    • v.15 no.1
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    • pp.75-85
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    • 2010
  • In this paper, a Z-source hybrid active power filter is proposed to compensate the harmonics and reactive power in power distribution system. The proposed system is composed of a 7th harmonics-tuned passive filter and an active power filter with a Z-source inverter topology, while voltage source PWM inverter or current source PWM inverter are applied as the power converter topology of conventional active power filters. The Z-source impedance network along with shoot through capability would ensure a constant DC voltage across the DC link. A polymer electrolyte membrane fuel cell is employed as an compensation DC energy source of the proposed system and its equivalent R-L-C circuit is modeled for simulation. As the compensation and control algorithm of the proposed system, the current synchronous detection algorithm is applied. The simulation analysis by PSIM is performed under the three-phase 220V/60Hz voltage source and 25A nonlinear diode loads. The effectiveness of the proposed the system is verified in the steady and transient states.

Study of Mobile Code Security Service in Active Network Environment (액티브 네트워크 환경에서의 이동코드 보안서비스 제공에 관한 연구)

  • 한인성;김진묵;유황빈
    • Proceedings of the Korea Information Assurance Society Conference
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    • 2004.05a
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    • pp.29-34
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    • 2004
  • As the number of internet users grows rapidly, the services which users required becomes various. However, for fulfilling these various user requirements, the existing passive network should be standardized for a long time. To resolve the delay on providing services, active network as a new technology was suggested. Its router or switch with DARPA as center has the program running ability, so user oriented network can be composed. However, active network's architecture can resolve the user required service using mobile code on the network node, but it is more complex, easy-to-attack, various than the passive network. Many researchers have tried to resolve this problem. So, this paper studied the mobile code security service in active network environment to provide user's convenience and accommodation, and introduced ANASP system as an alternative.

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Sampling based Network Flooding Attack Detection/Prevention System for SDN (SDN을 위한 샘플링 기반 네트워크 플러딩 공격 탐지/방어 시스템)

  • Lee, Yungee;Kim, Seung-uk;Vu Duc, Tiep;Kim, Kyungbaek
    • Smart Media Journal
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    • v.4 no.4
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    • pp.24-32
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    • 2015
  • Recently, SDN is actively used as datacenter networks and gradually increase its applied areas. Along with this change of networking environment, research of deploying network security systems on SDN becomes highlighted. Especially, systems for detecting network flooding attacks by monitoring every packets through ports of OpenFlow switches have been proposed. However, because of the centralized management of a SDN controller which manage multiple switches, it may be substantial overhead that the attack detection system continuously monitors all the flows. In this paper, a sampling based network flooding attack detection and prevention system is proposed to reduce the overhead of monitoring packets and to achieve reasonable functionality of attack detection and prevention. The proposed system periodically takes sample packets of network flows with the given sampling conditions, analyzes the sampled packets to detect network flooding attacks, and block the attack flows actively by managing the flow entries in OpenFlow switches. As network traffic sampler, sFlow agent is used, and snort, an opensource IDS, is used to detect network flooding attack from the sampled packets. For active prevention of the detected attacks, an OpenDaylight application is developed and applied. The proposed system is evaluated on the local testbed composed with multiple OVSes (Open Virtual Switch), and the performance and overhead of the proposed system under various sampling condition is analyzed.

New Three-Level PWM DC/DC Converter - Analysis, Design and Experiments

  • Lin, Bor-Ren;Chen, Chih-Chieh
    • Journal of Power Electronics
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    • v.14 no.1
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    • pp.30-39
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    • 2014
  • This paper studies a new three-level pulse-width modulation (PWM) resonant converter for high input voltage and high load current applications. In order to use high frequency power MOSFETs for high input voltage applications, a three-level DC converter with two clamped diodes and a flying capacitor is adopted in the proposed circuit. For high load current applications, the secondary sides of the proposed converter are connected in parallel to reduce the size of the magnetic core and copper windings and to decrease the current rating of the rectifier diodes. In order to share the load current and reduce the switch counts, three resonant converters with the same active switches are adopted in the proposed circuit. Two transformers with a series connection in the primary side and a parallel connection in the secondary side are adopted in each converter to balance the secondary side currents. To overcome the drawback of a wide range of switching frequencies in conventional series resonant converters, the duty cycle control is adopted in the proposed circuit to achieve zero current switching (ZCS) turn-off for the rectifier diodes and zero voltage switching (ZVS) turn-on for the active switches. Finally, experimental results are provided to verify the effectiveness of the proposed converter.

Current-Voltage Characteristics of Molecular Electronic Devices Using a Amino-Style Derivatives (Amino-style 유도체를 이용한 분자 전자 소자의 전류-전압 특성에 관한 연구)

  • Kim, So-Young;Koo, Ja-Ryong;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.882-885
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    • 2004
  • Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

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Development of 6kW ZVS Boost Converter by 4-Parallel Operation (4-병렬 제어 기법을 적용한 6kW 영전압 스위칭 승압형 컨버터 개발)

  • Rho, Min-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.1
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    • pp.86-92
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    • 2009
  • This paper presents development of 6kw ZVS(Zero Voltage Switching) boost converter by 4-parallel operation. To realize a high capacity converter with 6 kw, 4-parallel operation of 1.5kW unit module is proposed in this paper. To meet high ratio input to output voltage, isolated type booster converter is designed. To achieve ZVS operation of 4-switches of full bridge and protect a voltage overshoot caused by switch turn-off, simple active-clamp circuit is applied to the primary side. For parallel operation of 4-modules, master-slave control method is proposed to achieve input current sharing of 4-unit converter modules accurately. For performance tests, simulation is carried out. Also, load and experimental tests of the developed booster converter, 230Vdc/6kW, are carried out under various conditions. For field tests, the developed converter is applied for boosting a battery power to high DC_link voltage for a VSI inverter which starts a micro-turbine(MT) installed in vehicle and it's performance is verified through high speed motoring a MT up to tens of thousands of rpm.

5-Bit Digital Phase Shifter for 12 GHz Band Active Phased Array Antenna System (12 GHz대 능동 위상 배열 안테나 시스템을 위한 5-비트 디지털 위상 변위기)

  • 김경식;최익권
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.3
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    • pp.308-315
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    • 2002
  • In this paper, the 5-bit digital phase shiftier with 10 InGaAs HEMTs is designed and fabricated for U.S. mobile DBS receiving active phased array antenna system in 12 GHz band. 11.25 $^{\circ}$, 22.5$^{\circ}$ and 45$^{\circ}$ phase bits are designed in leaded-line type. 90$^{\circ}$ and 180$^{\circ}$ phase bits are designed in reflection type combined with ring hybrid. The return loss more than 17.5 ㏈, insertion louts less than 7.8 ㏈, and maximum phase error of $\pm$6$^{\circ}$for 32 phase responses are measured in 12.2 GHz~ 12.7 GHz band.

Crystal structure of the pretense domain of an ATP-independent heat shock protease HtrA

  • Kim, Dong-Young;Kim, Dong-Ryoung;Ha, Sung-Chul;Neratur K.Lokanath;Hwang, Hye-Yeon;Kim, Kyeong-Kyu
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2002.11a
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    • pp.24-24
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    • 2002
  • HtrA (high temperature requirement A), a periplasmic heat shock protein, is known to have molecular chaperone function at low temperatures and proteolytic activity at elevated temperatures. To investigate the mechanism of functional switch to pretense, we have determined the crystal structure of the N-terminal protease domain (PD) of HtrA from Thermotoga maritima. HtrA PD shares the same fold with chymotrypsin-like serine professes. However, crystal structure suggests that HtrA PD is not an active pretense at current state since its active site is not formed properly and blocked by an additional helical lid. On the surface of the lid, HtrA PD has hydrophobic patches that could be potential substrate binding sites for molecular chaperone activity. Present structure suggests that the activation of the proteolytic function of HtrA PD at elevated temperatures might occur by the conformational change.

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Analysis, Design and Implementation of a Soft Switching DC/DC Converter

  • Lin, Bor-Ren
    • Journal of Power Electronics
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    • v.13 no.1
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    • pp.20-30
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    • 2013
  • This paper presents a soft switching DC/DC converter for high voltage application. The interleaved pulse-width modulation (PWM) scheme is used to reduce the ripple current at the output capacitor and the size of output inductors. Two converter cells are connected in series at the high voltage side to reduce the voltage stresses of the active switches. Thus, the voltage stress of each switch is clamped at one half of the input voltage. On the other hand, the output sides of two converter cells are connected in parallel to achieve the load current sharing and reduce the current stress of output inductors. In each converter cell, a half-bridge converter with the asymmetrical PWM scheme is adopted to control power switches and to regulate the output voltage at a desired voltage level. Based on the resonant behavior by the output capacitance of power switches and the transformer leakage inductance, active switches can be turned on at zero voltage switching (ZVS) during the transition interval. Thus, the switching losses of power MOSFETs are reduced. The current doubler rectifier is used at the secondary side to partially cancel ripple current. Therefore, the root-mean-square (rms) current at output capacitor is reduced. The proposed converter can be applied for high input voltage applications such as a three-phase 380V utility system. Finally, experiments based on a laboratory prototype with 960W (24V/40A) rated power are provided to demonstrate the performance of proposed converter.

Characteristic of On-resistance Improvement with Gate Pad Structure (온-저항 특성 향상을 위한 게이트 패드 구조에 관한 연구)

  • Kang, Ye-Hwan;Yoo, Won-Young;Kim, Woo-Taek;Park, Tae-Su;Jung, Eun-Sik;Yang, Chang Heon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.4
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    • pp.218-221
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    • 2015
  • Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. In this study we have investigated a structure to reduce the on-resistance characteristics of the MOSFET. We have a proposed MOSFET structure of active cells region buried under the gate pad. The measurement are carried out with a EDS to analyze electrical characteristics, and the proposed MOSFET are compared with the conventional MOSFET. The result of proposed MOSFET was 1.68[${\Omega}$], showing 10% improvement compared to the conventional MOSFET at 700[V].