• Title/Summary/Keyword: Active RF

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Performance Verification of Active Phased Array Broadband Antenna in Ka-Band (Ka대역 능동위상배열 광대역 안테나 성능 검증 )

  • Youngwan Kim;Jong-Kyun-Back;Hee-Duck Chae;Ji-Han Joo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.24 no.1
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    • pp.23-30
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    • 2024
  • This paper dedcribes the design. verification, and analysis techniques for an advanced phased array antenna. When applying an active phased array antenna to an aircraft or missile, miniaturization of the array antenna and wide-angle beam steering characteristics can be unavoidable antenna design considerations. In particular, the active reflection coefficient characteristics when electronically steering a wide-angle beam is a design parameter that must be minimized in terms of system survival and system performance. As a radiator suitable for broadband characteristics and wide-angle beam steering, this paper designed an array structure using SFN and minimized the active reflection coefficient according to beam steering of up to 40° based on the spherical coordivate system angle. The bandwidth of the radiator was confirmed to be 3GHz based on active reflection in the Ka-band. In addition, the performance of the actually manufactured 8by8 array antenna wsa analyzed by measuring the single pattern of the radiator through a near-field test, mathematically synthesizing it, and predicting the Tx/TRx beam used in the seeker system.

A study of the sidelobe supprion in an acousto-optic wavelength tunable filter utilizing a SAW-guide directional coupler (방향성 결합구조의 음향파 도파로를 이용한 음향광학형 파장가변 광 필터의 부모드 억제에 관한 연구)

  • 임경훈;정홍식
    • Korean Journal of Optics and Photonics
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    • v.11 no.6
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    • pp.423-428
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    • 2000
  • We have demonstrated a -8 dB additional reduction in the intensity sidelobe of an apodized-interaction-strength guide-wave acousto-optic filter with a center passband of 1551.6 nm. Acoustic-intensity weighting was achieved by launching a surface acoustic wave (SAW) beam in a straight acoustic waveguide, and gradually transferring this SAW intensity to the active device, and back out, by evanescent-wave coupling across a 50 !lm barrier over a 19 rom interaction length. The intensity sidelobe was -4.27 dB for an unapodized filter with abmpt onset and cutoff of the interaction, but sidelobes were reduced to at most -12.68 dB for a SAW intensity with raised-cosine weighting. The RF driving power was 17.78 mW. A linear tuning rate of 8.86 nmIMHz and a spectral width of -1.7 nm were demonstrated. rated.

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Effect of O2 Plasma Treatments of Carbon Supports on Pt-Ru Electrocatalysts

  • Park, Soo-Jin;Park, Jeong-Min;Seo, Min-Kang
    • Bulletin of the Korean Chemical Society
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    • v.31 no.2
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    • pp.331-334
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    • 2010
  • In the present study, carbon supports mixed with purified multi-walled carbon nanotubes (MWNTs) and carbon blacks (CBs) were used to improve the cell performance of direct methanol fuel cells (DMFCs). Additionally, the effect of $O_2$ plasma treatment on CBs/MWNTs supports was investigated for different plasma RF powers of 100, 200, and 300 W. The surface and structural properties of the CBs/MWNTs supports were characterized by FT-IR, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and inductive coupled plasma-mass spectrometer (ICP-MS). The electrocatalytic activity of PtRu/CBs/MWNTs catalysts was investigated by cyclic voltammetry measurement. In the experimental results, the oxygen functional groups of the supports were increased with increasing plasma RF power, while the average Pt particle size was decreased owing to the improvement of dispersibility of the catalysts. The electrochemical activity of the catalysts for methanol oxidation was gradually improved by the larger available active surface area, itself due to the introduction of oxygen functional groups. Consequently, it was found that $O_2$ plasma treatments could influence the surface properties of the carbon supports, resulting in enhanced electrocatalytic activity of the catalysts for DMFCs.

RF Detecting Circuit Analysis by Using BLT Equation (BLT 방정식을 이용하 RF 검파 회로 해석)

  • Hwang, Se-Hoon;Park, Yoon-Mi;Jung, Hyun-Kyo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.9
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    • pp.1643-1647
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    • 2007
  • Recently, there is a need for research concerning the technologies and precaution methods against electronic bomb assaults. There lays perplex constitution and much coupling phenomenon in this type of system, and thus requires much time and memory in order to translate the system with the existing translation methods. Applying the EMT (Electromagnetic Topology) would prove much more efficient. In this paper, EMT has been applied to the circuit-like micro system, previously employed in micro systems. Also, each section has been interpreted using the BLT (Baum, Liu, Tesche) equation using the EMT, then reconstructed, consequentially interpreting an entire system. In this paper, a simple circuit containing active and passive elements based on a CPW has been interpreted employing the BLT equation, and has been proven by experiment using the circuit simulation, a simulation officially recognized for its accuracy in interpreting small structures. The interpretation results have been presented by an S-parameter, and by comparing the interpretation results attained through the BLT equation and that from common simulation to that from experimentation, that the BLT equation turned out to be the most reliable interpretation method could be found.

Development of a wireless telemetry system based on MICS standard (MICS 표준에 기반한 무선 텔레메트리 시스템 개발)

  • Lee, Seung-Ha;Park, Il-Yong
    • Journal of Sensor Science and Technology
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    • v.18 no.1
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    • pp.63-71
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    • 2009
  • It is said that the desirable bio-signal measurement and stimulation system should be an implantable type if the several problems such as biocompatibility, electrical safety, and so on are overcome. In addition to the biocompatibility issue, a robust RF communication and a stable electrical power source for the implantable bio-signal measurement and stimulation system are very important matters. In this paper, a wireless telemetry system which adopts the FCC's approved MICS (medical implant communication service) protocol and a wireless power transmission has been proposed. The proposed system composed of a base station (BS) and an implantable medical device (IMD) has the advantages that the interference with other RF devices can be reduced by the use of the specially assigned MICS frequency band of 402.MHz to 405 MHz. Also, the proposed system includes various functions of a multi-channel bio-signal acquisition and an electric stimulation. Since the electrical power for the IMD can be provided by the inductive link between PCB patterned coils, the IMD needs no battery so that the IMD can be smaller size and much less dangerous than the active type IMD which includes the internal battery. Finally, the validity as a wireless telemetry system has been demonstrated through the experiments by using the implemented BS and IMD.

Effects of the Sputtering Thickness and the Incident Angle of Pt Film Deposition as a Counter Electrode for Dye-sensitized Solar Cells (염료감응형 태양전지의 상대전극 Pt 필름 두께와 증착 각도가 효율에 미치는 영향에 관한 연구)

  • Kim, Hee-Je;Yeo, Tae-Bin;Park, Sung-Joon;Kim, Whi-Young;Seo, Hyun-Woong;Son, Min-Kyu;Chae, Won-Yong;Lee, Kyoung-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.3
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    • pp.588-593
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    • 2010
  • Sputter deposition on a Pt counter electrode was studied using radio frequency (RF) plasma as the improvement of incident photon to current conversion efficiency (IPCE) for dye-sensitized solar cells (DSCs). Effects of the sputtering thickness and the incident angle on a Pt counter electrode for DSCs were investigated. Experiments to get the optimal sputtering time for the performance of the DSCs were carried out. And it is found that the optimized sputtering time was 120 seconds, in addition, the incident angles of the substrate was adjusted from $0^{\circ}$ to $60^{\circ}$. The maximum efficiency of 5.37% was obtained at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

Design and Implementation of Double Down-Converter for Satellite TV (위성 TV용 이중 하향 변환기의 설계 및 제작)

  • Lee, Seung-Dae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.2
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    • pp.840-845
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    • 2013
  • In this paper, the broadband frequency double down-converter based on LC filter technologies has been designed and implemented, and its performances are introduced. The Designed frequency double down-converter is consisted with a low-noise amplifier, mixer, IF amplifier, LC filter, DC-block capacitor and RF-bypass capacitor. Especially, instead of active devices of a typical converter, the suggested converter designed using passive devices to provide both low-power consumption and low-cost model. As results of the measurement, the implemented frequency double down-converter realizes the broadband performance with the bandwidth of 100MHz (13~113MHz) at the center frequency of 63MHz, and its gain is approximately 40dB.

A Study on Corrosion CoCrMo Magnetic Thin Films (CoCrMo 자성박막의 부식에 관한 연구)

  • 남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.3 no.3
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    • pp.221-228
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    • 1993
  • The general requirements of recording media include recording performance, environmental stability, runnability on the drive or deck, and manufacturability. CoCrMo thin films were prepared using RF sputtering system for a study on chemical stability. Surface degradation of the CoCrMo thin film was studied by SEM, XPS and AES. Surface degradation was found to be dependent of sputtering condition and Mo content. Addition of Mo to CoCr thin film improved dramatically its surface degradation resistance in dilute sulfuric acid, as indicated by active-passive transition appeared in electrochemical polarization curve. Futhermore, the passive current density was decreased with increasing Mo content. The reduction in a number density of corrosion sites by Mo addition vms observed, after accelerated corrosion test. AES survey indicated that corrosion occured on the site with Cr depletion and highly concentrated chloride ions.

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Fabrication of RFID Reader RF Transceiver for 900 MHz Bandwidth (900 MHz 대역 RFID 리더용 RF 트랜시버 설계 및 제작)

  • Kim Bo-Joon;Kim Chang-Woo;Kim Nam Yoon;Kim Young-Gi
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.1A
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    • pp.58-64
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    • 2006
  • A 900-MHz band transceiver has been developed for RFID reader applications. In the transmitter, a GaAs SPST switch is used for high speed switching and low power consumption. In the receiver, a double balanced mixer is used to compress even-harmonic products. The ASK demodulator which consists of an active filter and comparator is used to reject the unwanted in band interferers. The transceiver produces a maximum transmitting power of 30 dBm and exhibits an 5 m communication range with a 6-dBi gain antenna.

The Fabrication of ZnO UV Photodetector with p-type Inversion Layer and Analysis of Vrlph Properties (P형 반전층을 갖는 ZnO 자외선 수광소자의 제작과 Vrlph특성 분석)

  • Oh, Sang-Hyun;Kim, Deok-Kyu;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.10
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    • pp.883-888
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    • 2007
  • Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.