• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.901-906
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• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.315-322
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• 2007

In this paper, active integrated antenna with left hand circular polarization(LHCP) for a transmitter of UHF RFID reader has been described. A novel rectangular ring patch as a radiator of the active antenna is proposed for easier impedance matching, smaller patch size, and LHCP characteristics. An amplification circuit is placed in the opening area of the radiator and is combined with it to work as oscillating circuit around 915 MHz. From the test results, impedance bandwidth of 29 MHz, 3 dB axial ratio bandwidth of 20 MHz, 3 dB beamwidth of 85 degree, and effective radiation power of 8.8 dBm have been obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.877-882
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• 2016

In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2016-2020
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• 2010

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.1
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• pp.144-152
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• 2009

This paper propose highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner for application to wireless communication system. The conventional passive $90^{\circ}C$ power divider and combiner cannot be integrated on MMIC because of their very large circuit size. Therefore, the highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner are required for a development of highly integrated MMIC. In this paper, the highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner employing InGaAs/GaAs HBT were designed, fabricated on GaAs substrate. According to the results, the circuit size of fabricated active $90^{\circ}C$ phase difference power divider and combiner were $1.67{\times}0.87$ mm and $2.42{\times}1.05$ mm, respectively, which were 31.6% and 2.2% of the size of conventional passive branch-line coupler. The output gain division characteristic of proposed divider circuit showed 8.4 dB and 7.9 dB respectively, and output phase difference characteristic showed $-89.3^{\circ}C$. The output gain coupling characteristic of proposed combiner circuit showed 9.4 dB and 10.5 dB respectively, and output phase difference characteristic showed $-92.6^{\circ}C$. The highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner exhibited good RF performances compared with the conventional passive branch-line coupler.

• Journal of Korea Multimedia Society
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• v.10 no.1
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• pp.49-57
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• 2007

Recently, CMOS RF integration has been widely explored in the wireless communication area to save cost, power, and chip area. The direct conversion architecture, rather than a more conventional super-het-erodyne, has been an attractive choice for single-chip integration because of its many advantages. However, the direct conversion architecture has several fundamental problems to solve in achieving performance comparable to a super-heterodyne counterpart. In this paper, we describe a programmable filter for mobile communication terminals using a direct conversion architecture. The proposed filter can be implemented with the active-RC filter and programmed to meet the requirements of different communication standards, including GSM, DECT and WCDMA. The filter can be tuned to select a detail frequency by changing the gate voltage of the MOS resistors. The gain of the proposed architecture can be programmed from 27dB to 72dB using the filter gain and VGA in 3dB steps.

• The Korean Journal of Pain
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• v.14 no.2
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• pp.193-198
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• 2001

Background: Anterior atlantoaxial subluxation (AAS) is a frequent phenomenon in rheumatoid arthritis (RA). AAS compresses the C2 ganglion or nerve and is a cause of posterior neck pain or occipital headache. Methods: We selected RA patients that had developed posterior neck pain or occipital headache caused by AAS. AAS was diagnosed by an increase of ADI (atlantodental interval). A distance of 3 mm or more was considered significant. Patients with vertical subluxation or symptoms suggestive of myelopathy were excluded. Before C2 RF ganglionotomy, we proceeded with a C2 ganglion block or greater occipital nerve block used by local anesthetics. For C2 RF ganglionotomy, the patient was placed in the supine position on a fluoroscopic table. A 100 mm, 4 mm active tip electrode was chosen. Following sensory stimulation at 0.2 to 0.6 V, the lesion was performed at a temperature of $60^{\circ}C$ to $65^{\circ}C$ for 60 sec. We followed up the patient after 6 months later. Results: All cases were female and the average duration of RA was 8.5 years. The duration of posterior neck pain or occipital headache was 1-8 months. The average ADI was 4.2 mm and the McGregor index was 3.3 mm on the average. In all cases, the score on the 4 point Likert scale was 4 (pain free) during the follow-up period. Conclusions: We found that the occipital headache or posterior neck pain caused by AAS in rheumatoid arthritis patients was alleviated over a short term follow up. C2 RF ganglionotomy is suggested as an effective palliative treatment for AAS in RA patients.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.397-401
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• 2005

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the retrodirective array antenna. The retrodirective array, which can reflect the incident wave retrodirertively back to the source direction without any priori information, requires phase conjugators to achieve the phase change of 180 degrees for the incoming signal. frequency mixers can efficiently serve as phase conjugators. The circuit topology is of the 2-port structure to avoid the complexity of LO and Rf signal combination and matching circuits, using a pseudomorphic HEU device. The operating frequencies are 4.0 CHz, 2.01 CHz, and 1.99 CHz for LO, RF, and If signals, respectively. Conversion loss is measured to be -ldB and 1-dB compression point -l5 dBm at the LO power of -10 dBm.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.343-348
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• 1999

The iron silicide films were prepared by chemical vapor deposition method using rf-plasma in variations of substrate temperature. rf-power, and ratio of $SiH_4$ and Fe-precursor. While iron silicide films are generally grown by ion beam synthesis (IBS) method of multi-step process, it is confirmed that iron silicide or $\beta$-phase consolidated $Fe_aSi_bC_cH_d$ was formed by one-step process in this study. The characteristics of films is variable because the different amounts of carbon and hydrogen was involved in the films as a function of dilute ratio of Fe-precursors and silane. It was shown that the different characteristics of films in carbon and hydrogen following the ratio of Fe-precursor and silane. The optical gap energy of films fabricated according to substrate temperature was invariant because active site brought in desorption of hydrogen was limiled. When rf-power was above 240 watt, the optical gap energy turned out to have high values because of dangling bonds increased by etching.