• Title/Summary/Keyword: Active Planar Array

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Ka-band Compact AESA Antenna Unit Design for Seeker

  • Bongmo Kang;Ikjong Bae;Jaesub Han;Youngwan. Kim;Jaehyun Shin;Jihan Joo;Seonghyun Ryu
    • International Journal of Internet, Broadcasting and Communication
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    • v.16 no.1
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    • pp.330-338
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    • 2024
  • In this paper, a Ka-band high-output active phased array antenna device applicable to small radars and seekers was designed, and the improved performance was studied. The radiation device assembly consists of 1x8 arrangements, and the step flared notch antenna type. It shows low active reflection loss characteristics in broadband, and low loss characteristics by applying the air-strip feeding structure, and is designed to enable beam steering up to 45 degrees. The TRM(transmit receive module) output power is more than 2.0W per channel using GaN HPA in the transmitting path, and satisfies more than 25.0 dB gain and less than 6.0 dB noise figure in the receiving path. Accordingly, the Effective Isotropically Radiated Power(EIRP) of the antenna unit shows the performance of 0.00 dB or more and the receive gain-to-noise temperature ratio(G/T) of 0.00 dB/k or more. For demonstration, we have designed aforementioned planar array antenna which consists of 64 radiating elements having a size within 130 mm x 130 mm x 300 mm and weight of less than 4.9 kg..

Design and Fabrication of the Oscillator Type Active Antenna by Using Slot Coupling (슬롯결합을 이용한 발진기형 능동 안테나의 설계 및 제작)

  • Mun, Cheol;Yun, Ki-Ho;Jang, Gyu-Sang;Park, Han-Kyu;Yoon, Young-joong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.1
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    • pp.13-21
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    • 1997
  • In this paper, the oscillator type active antenna used as an element of active phased array antenna is designed and fabricated using slot coupling. The radiating element and active circuit are fabricated on each layer respectively and coupled electromagnetically through slot on the ground plane. This structure can solve the problems such as narrow bandwidth of microstrip antenna, spurious radiation by active circuits, and spaces for integration of the feeding circuits which are caused by integrating antennas with oscillator circuits in the same layer. The active antenna in this paper, the oscillation frequency can be tuned linearly by controlling the drain bias voltage of FET. The frequency tuning range is between 12.37 GHz to 12.65 GHz when bias voltage is varied from 3V to 9V, thus frequency tuning bandwidth is 280 MHz (2.24%). The output power of antenna is uniform within 5dB over frequency tuning range. Therefore this active antenna can be used as an element of linear or planar active phased array antennas.

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The Low Sidelobe Array Antenna Design of Mobile Antenna System for Satellite Multimedia Communications (위성 양방향 통신용 이동 안테나 시스템의 저부엽 특성 배열 안테나 설계)

  • Park Ung Hee;Son Seong Ho;Noh Haeng Sook;Jeon Soon Ik
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.1
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    • pp.91-97
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    • 2005
  • In the mobile antenna systems for satellite multimedia communications, the active way antenna having a low sidelobe antenna pattern is described in this paper. This designed and fabricated array antenna is satisfied with international beam pattern regulation on moving states. The subarray of the proposed mobile antenna system is arranged with a stair-planar structure and non-periodic array spacing. This subarray is designed with three-layered microstrip patch as both receiving and transmitting radiator of which are improved with antenna gain and bandwidth. Also, the optimum subarray spacing is designed to make the lowest sidelobe pattern by genetic algorithm. In addition, the characteristics of a GA-perturbed array are investigated from simulated and measured beam pattern results.

Hole and Pillar Patterned Si Absorbers for Solar Cells

  • Kim, Joondong;Kim, Hyunyub;Kim, Hyunki;Park, Jangho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.226-226
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    • 2013
  • Si is a dominant solar material, which is the second most abundant element in the earth giving a benefit in the aspect in cost with low toxicity. However, the inherent limit of Si has an indirect band gap of 1.1 eV resulting in the limited optical absorption. Therefore, a critical issue has been raised to increase the utilization of the incident light into the Si absorber. The enhancement of light absorption is a crucial to improve the performances and thus relieves the cost burden of Si photovoltaics. For the optical aspect, an efficient design of a front surface, where the incident light comes in, has been intensively investigated to improve the performance of photon absorption. Lambertian light trapping can be attained when the light active surface is ideally rough to increase the optical length by about 50 compared to a planar substrate. This suggests that an efficient design may reduce thickness of the Si absorber from the conventional 100~300 ${\mu}m$ to less than 3 ${\mu}m$. Theoretically, a hole-array structure satisfies an equivalent efficiency of c-Si with only one-twelfth mass and one-sixth thickness. Various approaches have been applied to improve the incident light utilization in a Si absorber using textured structures, periodic gratings, photonic crystals, and nanorod arrays. We have designed hole and pillar structured Si absorbers. Four-different Si absorbers have been simultaneously fabricated on an identical Si wafer with hole arrays or pillar arrays at a fixed depth of 2 ${\mu}m$. We have found that the significant enhanced solar cell performances both for the hole arrayed and pillar arrayed Si absorbers compared to that of a planar Si wafer resulting from the effective improvement in the quantum efficiencies.

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Application of Depth Resolution and Sensitivity Distribution of Electrical Resistivity Tomography to Modeling Weathered Zones and Land Creeping (전기비저항 깊이분해능 및 감도분포: 풍화층 및 땅밀림 모델에 대한 적용)

  • Kim, Jeong-In;Kim, Ji-Soo;Ahn, Young-Don;Kim, Won-Ki
    • The Journal of Engineering Geology
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    • v.32 no.1
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    • pp.157-171
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    • 2022
  • Electrical resistivity tomography (ERT) is a traditional and representative geophysical method for determining the resistivity distributions of surrounding soil and rock volumes. Depth resolution profiles and sensitivity distribution sections of the resistivities with respect to various electrode configurations are calculated and investigated using numerical model data. Shallow vertical resolution decreases in the order of Wenner, Schlumberger, and dipole-dipole arrays. A high investigable depth in homogeneous medium is calculated to be 0.11-0.19 times the active electrode spacing, but is counterbalanced by a low vertical resolution. For the application of ERT depth resolution profiles and sensitivity distributions, we provide subsurface structure models for two types of land-creping failure (planar and curved), subvertical fracture, and weathered layer over felsic and mafic igneous rocks. The dipole-dipole configuration appears to be most effective for mapping land-creeping failure planes (especially for curved planes), whereas the Wenner array gives the best resolution of soil horizons and shallow structures in the weathered zone.