• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.2
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• pp.285-291
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• 2016

In chemical-looping combustion, pure oxygen is transferred to fuel by solid particles called as oxygen carrier. Chemical-looping combustion process usually utilizes a circulating fluidized-bed process for fuel combustion and regeneration of the reduced oxygen carrier. The performance of an oxygen carrier varies with the active metal oxide and the raw support materials used. In this work, spraydried Mn-based oxygen carriers were prepared with different raw support materials and their physical properties and oxygen transfer performance were investigated to determine that the raw support materials used are suitable for spray-dried manganese oxide oxygen carrier. Oxygen carriers composed of 70 wt% $Mn_3O_4$ and 30 wt% support were produced using spray dryer. Two different types of $Al_2O_3$, ${\gamma}-Al_2O_3$ and ${\alpha}-Al_2O_3$, and $MgAl_2O_4$ were applied as starting raw support materials. The oxygen carrier prepared from ${\gamma}-Al_2O_3$ showed high mechanical strength stronger than commercial fluidization catalytic cracking catalyst at calcination temperatures below $1100^{\circ}C$, while the ones prepared from ${\alpha}-Al_2O_3$ and $MgAl_2O_4$ required higher calcination temperatures. Oxygen transfer capacity of the oxygen carrier prepared from ${\gamma}-Al_2O_3$ was less than 3 wt%. In comparison, oxygen carriers prepared from ${\alpha}-Al_2O_3$ and $MgAl_2O_4$ showed higher oxygen transfer capacity, around 3.4 and 4.4 wt%, respectively. Among the prepared Mn-based oxygen carriers, the one made from $MgAl_2O_4$ showed superior oxygen transfer performance in the chemical-looping combustion of $CH_4$, $H_2$, and CO. However, it required a high calcination temperature of $1400^{\circ}C$ to obtain strong mechnical strength. Therefore, further study to develop new support compositions is required to lower the calcination temperature without decline in the oxygen transfer performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.270-274
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• 2017

Formic acid has been known as one of key sources of hydrogen. Among various monometallic catalysts, hydrogen can be efficiently produced on Pd catalyst. However, the catalytic activity of Pd is gradually reduced by the blocking of active sites by CO, which is formed from the unwanted indirect oxidation of formic acid. One of promising solutions to overcome such issue is the design of alloy catalyst by adding other metal into Pd since alloying effect (such as ligand and strain effect) can increase the chance to mitigate CO poisoning issue. In this study, we have investigated formic acid deposition on the bimetallic $Pd/Pd_3Fe$ core-shell nanocatalyst using DFT (density functional theory) calculation. In comparison to Pd catalyst, the activation energy of formic acid dehydrogenation is greatly reduced on $Pd/Pd_3Fe$ catalyst. In order to understand the importance of alloying effects in catalysis, we decoupled the strain effect from ligand effect. We found that both strain effect and ligand effect reduced the binding energy of HCOO by 0.03 eV and 0.29 eV, respectively, compared to the pure Pd case. Our DFT analysis of electronic structure suggested that such decrease of HCOO binding energy is related to the dramatic reduction of density of state near the fermi level.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.156-162
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• 2017

CuO(x)/0.3Al-0.7Ce catalysts with different CuO loadings (x = 2~20 wt%) were prepared by impregnation method and investigated the effects of CuO loadings on the low temperature CO oxidation. Of the used catalysts, the CuO(10)/0.3Al-0.7Ce catalyst showed the highest catalytic performance in the absence or presence of water vapor. In the presence of water vapor, the catalytic performance was drastically decreased, with a temperature of 50% CO conversion ($T_{50%}$) shifted to higher temperature by $50^{\circ}C$ compared to the those in dry conditions because of the competitive adsorption of water vapor on the active sites. The copper metal surface area calculated from $N_2O$-titration analysis and the oxygen capacity from CO-pulse experiments were increased with the CuO loadings and showed a maximum at 10 wt%CuO/0.3Al-0.7Ce catalyst. These trends are in good agreement with the tendency of $T_{50%}$ of the catalysts. From these characteristic aspects, it could be deduced that the catalytic performance was closely related to the oxygen capacity and the copper metallic surface area.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.77-78
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• 2006

최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

• Journal of the Korean Chemical Society
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• v.54 no.5
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• pp.567-572
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• 2010

5,10-Methenyltetrahydrofolate synthetase from chicken liver was purified through 30-70% ammonium sulfate fractionation, Q Sepharose Fast Flow anion exchange and Source 15Phe hydrophobic interaction chromatography. Specific activities of cell extract, ammonium sulfate, Q Sepharose Fast Flow and Source 15Phe were 0.0085, 0.031, 0.80 and 1.27 U/mg, respectively. Purification fold activities of cell extract, ammonium sulfate, Q Sepharose Fast Flow and Source 15Phe were 1, 3.7, 94.1 and 149.4, respectively. HPLC gel permeation chromatography and SDS-polyacrylamide electrophoresis experiments indicated that the enzyme is a monomeric protein with a molecular weight of 22.8 kDa. Km for 5-methyl THF and Mg-ATP were $7.1\;{\mu}M$ and $63\;{\mu}M$, respectively. Optimum temperature and pH were $30^{\circ}C$ and 6.0, respectively. The data for metal ion specificity and stoichiometry showed that the maximum activity was obtained with a 1:l. ratio of $Mg^{2+}$. The ATP and Km values increased in the order of MgATP, MgCTP, MgUTP and MgGTP, and the maximum activities also decreased in the same order, indicating MgATP as the most efficient substrate. The enzyme was chemically modified only by tetranitrometane and 1-ethyl-3-(3-dimethyl aminopropyl)-carbodiimide, indicating that tyrosine and carboxylate are present in the active site.

• Composites Research
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• v.29 no.1
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• pp.40-44
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• 2016

Nuclear fuel cladding used in a nuclear power plant must possess superior oxidation resistance in the coolant atmosphere of high temperature/high pressure. However, as was the case for the critical LOCA (loss-of-coolant accident) accident that took place in the Fukushima disaster, there is a risk of hydrogen explosion when the nuclear fuel cladding and steam reacts dramatically to cause a rapid high-temperature oxidation accompanied by generation of a huge amount of hydrogen. Hence, an active search is ongoing for an alternative material to be used for manufacturing of nuclear fuel cladding. Studies are currently aimed at improving the safety of this cladding. In particular, ceramic-based nuclear fuel cladding, such as SiC, is receiving much attention due to the excellent radiation resistance, high strength, chemical durability against oxidation and corrosion, and excellent thermal conduction of ceramics. In the present study, cladding with $SiC_f/SiC$ protective films was fabricated using a process that forms a matrix phase by polymer impregnation of polycarbosilane (PCS) after filament-winding the SiC fiber onto an existing Zry-4 cladding tube. It is analyzed the oxidation and microstructure of the metal cladding with $SiC_f/SiC$ composite protective films using a drop tube furnace for thermal shock test.

• Elastomers and Composites
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• v.48 no.1
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• pp.61-66
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• 2013

A family of Cr(III) complexes supported on tridentate dibenzimidazolyl ligands having a general formula: $[N(CH_3)(CH_2)_2(Bm-R)_2]CrCl_3$ [where Bm = benzimidazolyl, R = H (3a); -Me(3b); -Bn (3c)] have been synthesized and utilized them for the trans-1,4-specific polymerizations of 1,3-butadiene (BD), activated with methylalumoxane (MAO). The activity of BD polymerizations was sensitive to the type of ligand on the Cr metal, so that the activity decreases in the order of 3a > 3c > 3b. All the catalysts combined with MAO yielded polybutadienes with perfect trans-1,4 structure with moderate molecular weight.