• 자원리싸이클링
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• 제23권4호
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• pp.21-29
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• 2014

폐리튬이온전지 NCM($Li(Ni_xCo_yMn_z)O_2$)양극활물질 내에는 코발트(15 ~ 20%), 니켈(25 ~ 30%), Mn(10 ~ 15%) 및 리튬(5 ~ 10%) 등의 유가금속이 존재한다. 본 연구에서는 폐리튬이온전지 NCM 양극활물질로부터 친환경 유기산인 말릭산을 이용한 유가금속 침출 공정을 연구하였다. 주요공정인자는 말릭산 농도, 과산화수소 농도, 고액비, 반응온도 등이었으며, 침출액 내 금속농도는 ICP-OES(Inductively Coupled Plasma Optic Emission Spectrometer)를 통해 분석하였다. 환원제($H_2O_2$) 첨가로 인해 유가금속의 침출율이 상승하는 효과를 얻었으며, 최적공정인자는 말릭산 2 M, 과산화수소 5 vol.%, 고액비(solid/liquid ratio) 5 wt.%, 반응온도 $80^{\circ}C$이었으며, 침출율은 코발트 99.10%, 니켈 99.80%, 리튬 99.75%이었다.

• 대한환경공학회지
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• 제35권7호
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• pp.472-478
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• 2013

기존 흡착제들보다 우수한 흡착성능을 확보하고, 특히 특정한 용제에 대한 흡착성능을 극대화하기 위하여 활성탄소섬유를 기본흡착제로 적용하였고, 여기에 활성금속을 첨착시켜 흡착성능과 선택성을 제고하고자 하였다. 선행 연구를 통하여 선정된 Cu, Cr을 기본 활성금속으로 하고 여기에 활성보조금속으로서 Pt, Pd를 복합 첨착시킨 활성탄소섬유를 첨착온도 및 시간을 변수로 하여 제조하였다. 복합첨착 활성탄소섬유의 흡착 성능이 단일첨착 활성탄소섬유와 비교하여 향상되었으며, 첨착온도 $100^{\circ}C$, 첨착시간 5시간 조건에서 최상의 흡착 성능을 확인할 수 있었다. Cu-Cr-Pt-Pd 복합첨착 활성탄소섬유가 가장 뛰어난 흡착성능을 보였으며, 기존 활성탄소섬유보다 2배 이상의 높은 흡착성능을 확인하였다. 한편, 활성금속첨착 활성탄소섬유상에의 확산 및 흡착에 필요한 최소 접촉시간은 0.5초 이상은 유지해야 함을 확인 할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국재료학회지
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• 제20권4호
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• BMB Reports
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• 제48권2호
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• pp.91-96
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• 2015

Cells express several antioxidant enzymes to scavenge reactive oxygen species (ROS) responsible for oxidative damages and various human diseases. Therefore, antioxidant enzymes are considered biomedicine candidates. Among them, extracellular superoxide dismutase (SOD3) had showed prominent efficacy against asthma and inflammation. Despite its advantages as a biomedicine, the difficulty in obtaining large quantity of active recombinant human SOD3 (rhSOD3) has limited its clinical applications. We found that a significant fraction of over-expressed rhSOD3 was composed of the inactive apo-enzyme and its potency against inflammation depended on the rate of metal incorporation. Also, purified rhSOD3 was unstable and lost its activity very quickly. Here, we suggest an ideal preparative method to express, purify, and store highly active rhSOD3. The enzymatic activity of rhSOD3 was maximized by incorporating metal ions into rhSOD3 after purification. Also, albumin or polyethylene glycol prevented rapid inactivation or degradation of rhSOD3 during preparative procedures and long-term storage.

• Corrosion Science and Technology
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• 제6권6호
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• pp.291-296
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• 2007

The corrosion of metals and alloys in flowing liquids can be classified into uniform corrosion and localized corrosion which may be categorized as follows. (1) Localized corrosion of the erosion-corrosion type: the protective oxide layer is assumed to be removed from the metal surface by shear stress or turbulence of the fluid flow. A macro-cell may be defined as a situation in which the bare surface is the macro-anode and the other surface covered with the oxide layer is the macro-cathode. (2) Localized corrosion of the differential flow-velocity corrosion type: at a location of lower fluid velocity, a thin and coarse oxide layer with poor protective qualities may be produced because of an insufficient supply of oxygen. A macro-cell may be defined as a situation in which this surface is the macro-anode and the other surface covered with a dense and stable oxide layer is the macro-cathode. (3) Localized corrosion of the active/passive-cell type: on a metal surface a macro-cell may be defined as a situation in which a part of it is in a passivation state and another in an active dissolution state. This situation may arise from differences in temperature as well as in the supply of the dissolved oxygen. Compared to uniform corrosion, localized corrosion tends to involve a higher wall thinning rate (corrosion rate) due to the macro-cell current as well as to the ratio of the surface area of the macro-anode to that of the macro-cathode, which may be rationalized using potential vs. current density diagrams. The three types of localized corrosion described above can be reproduced in a Jet-in-slit test by changing the flow direction of the test liquid and arranging environmental conditions in an appropriate manner.

• 대한전자공학회논문지SD
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• 제46권3호
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• pp.51-59
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• 2009

본 논문에서는 어쿠스틱 센서 IC 용 연속 시간 시그마-델타 모듈레이터를 구현하였다. 모듈레이터의 전력 소모를 최소화하기 위해 summing 단의 필요성을 제거한 피드-포워드 (feed-forward) 구조로 설계 하였으며, 해상도를 높이기 위해 선형성이 우수한 active-RC 필터를 사용하여 설계 하였다. 또한 초과 루프 지연 시간 (excess loop delay)에 의한 성능 저하를 방지하기 위한 회로 기법을 제안 하였다. 저 전압, 고 해상도의 4차 단일 비트 연속 시간 시그마-델타 모듈레이터는 $0.13{\mu}m$ 1 poly 8 metal CMOS 표준 공정으로 제작하였으며 코어 크기는 $0.58\;mm^2$ 이다 시뮬레이션 결과 25 kHz 의 신호 대역 내에서 91.3 dB의 SNR(signal to noise ratio)을 얻었고 전체 전력 소모는 $290{\mu}W$ 임을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 대한전기학회논문지:시스템및제어부문D
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• 제55권2호
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• pp.68-71
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• 2006

Active thermography has been used for several years in the field of remote non-destructive testing. It provides thermal images for remote detection and imaging of damages. Also, it is based on propagation and reflection of thermal waves which are launched from the surface into the inspected component by absorption of modulated radiation. For energy deposition, it use external heat sources (e.g., halogen lamp or convective heating) or internal heat generation (e.g., microwaves, eddy current, or elastic wave). Among the external heat sources, the ultrasound is generally used for energy deposition because of defect selective heating up. The heat source generating a thermal wave is provided by the defect itself due to the attenuation of amplitude modulated ultrasound. A defect causes locally enhanced losses and consequently selective heating up. Therefore amplitude modulation of the injected ultrasonic wave turns a defect into a thermal wave transmitter whose signal is detected at the surface by thermal infrared camera. This way ultrasound thermography(UT) allows for selective defect detection which enhances the probability of defect detection in the presence of complicated intact structures. In this paper the applicability of UT for fast defect detection is described. Examples are presented showing the detection of defects in PCB material. Measurements are performed on various kinds of typical defects in PCB materials (both Cu metal and non-metal epoxy). The obtained thermal image reveals area of defect in row of thick epoxy material and PCB.

• 한국통신학회논문지
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• 제21권4호
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• pp.1068-1076
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• 1996

저전압 아날로그 전류모드 능동필터의 기본블럭으로 응용될 수 있는 새로운 구조를 갖는 연속시간 전류모드 적분기를 제안한다. 제안된 전류모드 적분기를 Zele등이 설계한 기존 전류모드 적분기와 비교하여, 단위이득 주파수, 부하구동능력 및 소비전력이 개선될 수 있음을 소신호 해석 및 시뮬레이션을 통하여 입증하였다. 제안된 전류 모드 적분기를 이용하여 전류모드 3차 저역 능동필터를 설계하고, 설계된 능동필터를 ORBIT사의 $1.2{\mu}{\textrm{m}}$ double-poly double-metal CMOS n-well 공정을 이용하여 칩으로 제작하였다. 제작된 전류모드 능동필터의 측정결과, 단일 3.3V의 공급전압을 인가시 44.5MHz의 -3dB 차단주파수와 3.3mW의 소비전력 특성을 나타내었으며, 필터의 전체 칩면적은 $0.12mm^2$ 였다.