• Title/Summary/Keyword: Active Metal

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Boosting up the photoconductivity and relaxation time using a double layered indium-zinc-oxide/indium-gallium-zinc-oxide active layer for optical memory devices

  • Lee, Minkyung;Jaisutti, Rawat;Kim, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.278-278
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    • 2016
  • Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

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A Wide Dynamic Range CMOS Image Sensor Based on a Pseudo 3-Transistor Active Pixel Sensor Using Feedback Structure

  • Bae, Myunghan;Jo, Sung-Hyun;Lee, Minho;Kim, Ju-Yeong;Choi, Jinhyeon;Choi, Pyung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.21 no.6
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    • pp.413-419
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    • 2012
  • A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

Additive Manufacturing for Sensor Integrated Components (센서 융합형 지능형 부품 제조를 위한 적층 제조 기술 연구)

  • Jung, Im Doo;Lee, Min Sik;Woo, Young Jin;Kim, Kyung Tae;Yu, Ji-Hun
    • Journal of Powder Materials
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    • v.27 no.2
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    • pp.111-118
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    • 2020
  • The convergence of artificial intelligence with smart factories or smart mechanical systems has been actively studied to maximize the efficiency and safety. Despite the high improvement of artificial neural networks, their application in the manufacturing industry has been difficult due to limitations in obtaining meaningful data from factories or mechanical systems. Accordingly, there have been active studies on manufacturing components with sensor integration allowing them to generate important data from themselves. Additive manufacturing enables the fabrication of a net shaped product with various materials including plastic, metal, or ceramic parts. With the principle of layer-by-layer adhesion of material, there has been active research to utilize this multi-step manufacturing process, such as changing the material at a certain step of adhesion or adding sensor components in the middle of the additive manufacturing process. Particularly for smart parts manufacturing, researchers have attempted to embed sensors or integrated circuit boards within a three-dimensional component during the additive manufacturing process. While most of the sensor embedding additive manufacturing was based on polymer material, there have also been studies on sensor integration within metal or ceramic materials. This study reviews the additive manufacturing technology for sensor integration into plastic, ceramic, and metal materials.

Current- voltage (I-V) Characteristics of the Molecular Electronic Devices using Various Organic Molecules

  • Koo, Ja-Ryong;Pyo, Sang-Woo;Kim, Jun-Ho;Kim, Jung-Soo;Gong, Doo-Won;Kim, Young-Kwan
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.154-158
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    • 2005
  • Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

Novel Water-Soluble Polyfluorenes as an Interfacial layer leading to Cathodes-Independent High Performance of Organic Solar Cells

  • Oh, Seung-Hwan;Shim, Hee-Sang;Park, Dong-Won;Jeong, Yon-Kil;Lee, Jae-Kwang;Moon, Seung-Hyeon;Kim, Dong-Yu
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.394-394
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    • 2009
  • Water solubility of conjugated polymers may offer many applications. Potential applications of water-soluble conjugated polymers include the polymer light-emitting diode and new materials for nano and micro hollow-capsules, and bio- or chemo-sensors. We synthesized neutral polyfluorenes containing bromo-alkyl groups by the palladium catalyzed Suzuki coupling reaction. Bromo-alkyl side groups in neutral polyfluorenes were quaternized by tri-methyl amine solution. The electrochemical and optical properties of water-soluble conjugated polymers are discussed. This novel synthesized water-soluble conjugated polymers were used as a interfacial dipole layer between active layer and metal cathode in polymer solar cell for enhancement of open-circuit voltage (Voc), which is one of the most critical factors in determining device characteristics. We also investigated the device performance of polymer solar cell with different metal cathode such as Al, Ag, Au and Cu. In polymer solar cell, novel cationic water-soluble conjugated polymers were inserted between active layer and high-work function cathode (Al, Ag, Au and Cu).

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Health Risks to Children and Adults Residing in Riverine Environments where Surficial Sediments Contain Metals Generated by Active Gold Mining in Ghana

  • Armah, Frederick Ato;Gyeabour, Elvis Kyere
    • Toxicological Research
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    • v.29 no.1
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    • pp.69-79
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    • 2013
  • The purpose of this study was to investigate the current status of metal pollution in the sediment from rivers, lakes, and streams in active gold mining districts in Ghana. Two hundred and fifty surface sediment samples from 99 locations were collected and analyzed for concentrations of As, Hg, Cr, Co, Cu, Fe, Zn, Pb, Cd, Ni, and Mn using inductively coupled plasma-mass spectroscopy (ICP-MS). Metal concentrations were then used to assess the human health risks to resident children and adults in central tendency exposure (CTE) and reasonable maximum exposure (RME) scenarios. The concentrations of Pb, Cd, and As were almost twice the threshold values established by the Hong Kong Interim Sediment Quality Guidelines (ISQG). Hg, Cu, and Cr concentrations in sediment were 14, 20, and 26 times higher than the Canadian Freshwater Sediment Guidelines for these elements. Also, the concentrations of Pb, Cu, Cr, and Hg were 3, 11, 12, and 16 times more than the Australian and New Zealand Environment and Conservation Council (ANZECC) sediment guideline values. The results of the human health risk assessment indicate that for ingestion of sediment under the central tendency exposure (CTE) scenario, the cancer risks for child and adult residents from exposure to As were $4.18{\times}10^{-6}$ and $1.84{\times}10^{-7}$, respectively. This suggests that up to 4 children out of one million equally exposed children would contract cancer if exposed continuously to As over 70 years (the assumed lifetime). The hazard index for child residents following exposure to Cr(VI) in the RME scenario was 4.2. This is greater than the United States Environmental Protection Agency (USEPA) threshold of 1, indicating that adverse health effects to children from exposure to Cr(VI) are possible. This study demonstrates the urgent need to control industrial emissions and the severe heavy metal pollution in gold mining environments.

Metallocene Catalysts on Carbon-based Nano-materials

  • Choi, Baek-Hap;Lee, Jun-O;Lee, Seung-Jun;Ko, Jae-Hyeon;Lee, Kyoung-Seok;Oh, Jung-Hoon;Kim, Yong-Hyun;Choi, In-Sung S.;Park, Sung-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.556-556
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    • 2012
  • Transition metal-based organometallic complexes have shown great talents as a catalyst in various reactions. Designing organic molecules and coordinating them to such active centers have been a promising route to control the catalytic natures. Metallocene, which has transition metal atoms sandwiched by aromatic rings, is one of the representative systems for organometallic catalysts. Group 4-based metallocene catalysts have been most commonly used for the production of polyolefins, which have great world-wide markets in the real life. Graphenes and carbon nanotubes (CNTs) were composed of extended $sp^2$ carbon networks, showing high electron mobility as well as have extremely large steric bulkiness relative to metal centers. We were inspired by these characteristics of such carbon-based nano-materials and assumed that they could intimately interact with active centers of metallocene catalysts. We examined this hypothesis and, recently, reported that CNTs dramatically changed catalytic natures of group 4-based catalysts when they formed hybrid systems with such catalysts. In conclusion, we produced hybrid materials composed of group-4 based metallocenes, $Cp_2ZrCl_2$ and $Cp_2TiCl_2$, and carbon-based nano-materials such as RGO and MWCNT. Such hybrids were generated via simple adsorption between Cp rings of metallocenes and graphitic surfaces of graphene/CNT. The hybrids showed interesting catalytic behaviors for ethylene polymerizations. Resulting PEs had significantly increased Mw relative to those produced from free metallocene-based catalytic systems, which are not adsorbed on carbon-based nano-materials. UHMWPEs with extremely high Mw were obtained at low Tp.

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Active-RC Channel Selection Filter with 40MHz Bandwidth and Improved Linearity (40MHz의 대역폭과 개선된 선형성을 가지는 Active-RC Channel Selection Filter)

  • Lee, Han-Yeol;Hwang, Yu-Jeong;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2395-2402
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    • 2013
  • An active-RC channel selection filter (CSF) with the bandwidth of 40MHz and the improved linearity is proposed in this paper. The proposed CSF is the fifth butterworth filter which consists of a first order low pass filter, two second order low pass filters of a biquad architecture, and DC feedback circuit for cancellation of DC offset. To improve the linearity of the CSF, a body node of a MOSFET for a switch is connected to its source node. The bandwidth of the designed CSF is selected to be 10MHz, 20MHz and 40MHz and its voltage gain is controlled by 6 dB from 0 dB to 24 dB. The proposed CSF is designed by using 40nm 1-poly 8-metal CMOS process with a 1.2V. When the designed CSF operates at the bandwidth of 40 MHz and voltage gain of 0 dB, the simulation results of OIP3, in-band ripple, and IRN are 31.33dBm, 1.046dB, and 39.81nV/sqrt(Hz), respectively. The power consumption and layout area are $450{\times}210{\mu}m^2$ and 6.71mW.

Development and Application of Electrode for a New Secondary Aqueous Cell (새로운 수용성 2차 전지용 전극의 개발과 응용)

  • Hwang, Kum-Sho
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.41 no.2
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    • pp.165-170
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    • 2005
  • Al-Zn alloy/$MnO_2$, seawater cell was considered as a primary aqueous cell with an average voltage range from 1.0 to 1.1V, and the electrolyte of seawater was uptaken into the cell. Eventually, the capacity of its usage will be used for long-term. However, the more use of this cell, the higher corrosion phenomenon of the electrode occurred. Due to its corrosion phenomenon, one main default has been observed with gradual decrease during a discharge process. In this research, a common-used active material for anode was $LiNiO_2$. An active material for cathode, $Zn_{X}FeS_2$ was synthesized in high temperature by uptaken a small amount of 1.3 wt% of ZnS into $FeS_2$, one of the transition-metal dichalcogenides in high temperature. Consequently, based on their usages shown above, this secondary aqueous lithium cell could be more developed. This cell was shown as remarkable charge/discharge performance during the charge/discharge processes. This cathode with active material was given a considerable efficiency of inserting $Li^+$ ions. Moreever, in accordance with the characteristic of the crystal structure for $Zn_{x}FeS_2$, a small amount of ZnS was added which made it possible to reduce prominently velocity of corrosion during the charge/discharge cycle. By applying those merits, Al-Zn alloy/$MnO_2$ seawater cell will be used as a fundamental data in order to transform into a secondary aqueous cell.

Study on the IPMC electrical characteristic change For the utilization of Ocean Current Energy (해양 에너지 활용을 위한 IPMC의 전기적 특성 변화 연구)

  • Son, Kyung Min;Kim, Min;Kim, Gwan-Hyung;Kim, Hyun-jo;Byun, Gi-Sik
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.531-533
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    • 2013
  • In this paper, to study the IPMC (Ionic exchange Polymer Metal Composite) material consisting of a sulfonic acid ion and fluoride combination of carbon with Nafion film greatly affected the electro-active polymer (Electro Active Polymer) characteristics and the presence of water and cationshave properties. Use or electrical energy into mechanical energy, mechanical energy, electrical energy, and can be utilized to its characteristics, depending on the water and cations in water varies greatly. Configure the device simulations in order to study the electrical properties of these IPMC. Stepper Motor using MCU and simulator designed for the electrical characterization due to the movement and to the implementation of the mechanical movement of ocean currents. In this study, configuration the IPMC and simulation device to the area of the IPMC to the efficient use of energy currents, frequency, salinity concentration, through the efficient use of the IPMC due to the bend angle of the electrical analysis and research methods we propose.

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