• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.235-240
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• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.60.2-60.2
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• 2012

기술의 발전이 비약적으로 성장하면서, 소비자의 요구는 빠르게 변하고 있다. 전자 소자를 응용한 제품 시장은 매해를 거듭할 수록 빠른 속도로 성능을 향상시키고 있다. 이에 따라 디스플레이 시장에서 가장 큰 관심은 작은 화면에서도 높은 해상도를 요구하고, 수광형의 구동방식이 아닌 능동형 구동방식을 갖는 AMOLED (Active Matrix Organic Light Emitted Diode)를 선호하고 있으며, 빠른 응답속도 기반을 갖는 표시소자를 요구하고 있다. 제품 생산자들의 고민은 기존의 비정질 실리콘 기반의 LCD (Liquid crystal display) 구동소자와 공정을 이용하여 소비자의 욕구에 접근하기가 점점 어려워지고 있다. 최근 이러한 문제점을 해결하고자 하는 노력들중에서 산화물 반도체 재료와 이를 이용한 박막 트랜지스터 개발이 큰 관심을 갖고 있다. 최근 InGaZnO 산화물 반도체 재료는 기존의 비정질 실리콘 반도체 재료 보다 높은 전계 이동도(> $10cm^2/V.s$)를 보이고 있으며, 비정질 실리콘 박막 트랜지스터의 구조에서 산화물 반도체 재료의 대체만으로 효과가 보일 수 있어서 큰 연구가 진행되어져 왔다. 하지만, InGaZnO 산화물 박막 트랜지스터에 대한 소자를 AMOLED에 적용할 때, 기존의 LTPS (low temperature poly-slicon)에서는 발견되지 않았던 소자의 전계신뢰성과 이동도 한계가 문제로 제기되었다. 또한, Indium이라는 희소원소의 사용은 향후 공정 단가와 희소 물질에 대한 위협등에 의하여 새로운 산화물 반도체 재료에 대한 요구와 관심이 발생하고 있다. 본 발표에서는 기존의 산화물 반도체 재료에 대한 차세대 디스플레이인 AMOLED와 유연 디스플레이에 대한 응용 가능성을 발표할 예정이다. 또한 산화물 반도체 재료의 신뢰성 문제에 대한 해결방법으로 신규 산화물 반도체 재료에 대한 연구 방향과 indium-free 계열을 이용한 저원가 산화물 반도체 연구에 대하여 소개할 예정이다. 앞으로 산화물 반도체 재료에 대한 연구와 응용은 기존의 실리콘 반도체 틀을 벗어난 새로운 응용분야를 열어줄 수 있을 것으로 기대하고 있으며, 그 기대에 대한 몇가지 예를 통하여 재료와 소자의 응용 가능성을 논의할 예정이다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.251-254
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• 2007

Principal challenges to $\underline{direct\;fabrication}$ of high performance a-Si:H transistor arrays on flexible substrates include automated handling through bonding-debonding processes, substrate-compatible low temperature fabrication processes, management of dimensional instability of plastic substrates, and planarization and management of CTE mismatch for stainless steel foils. Viable solutions to address these challenges are described.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.