• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1807-1813
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• 2007

This paper deals with extending the variable natural oscillation frequency range of an active integrated FET oscillator. In this paper, we conform experimentally that the variable range of the natural oscillation frequency is expanded about three times in the oscillator controlled by the varactor diode. When the frequency difference is given to the oscillators in the two element antenna system, phase difference appeared between the oscillators. The 2-, 3-, 4-, 5-element patch antenna arrays are composed for the beam scanning experiments. All the above patch antennas show good phased array characteristics. The range of the scanning angle is about $30^{\circ}$, and the radiation power is gradually increased from $50{\mu}W\;to\;200{\mu}W$. The radiation patterns we sharpened as the number of elements is increased.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.763-770
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• 1996

In this paper, the Single-stage Transmission type Injectiong-Locked Oscillator(STILO) was designed and fabicated for the Active Integrated Phased Array Antenna(AIPAA) system. The STILO, which was designed and fabricated by injection-locked technique and hair-pin resonator, has the same 210MHz frequency tuning range of the Voltage Controlled Oscillator(VCO) used by varactor. The locking bandwidth of STILO with 11.5MHz bandwidth, is much better than that of the Injection-Locked Dielectric Resonator Oscillator(ILDRO), And the STILO has the improved noise characteristics in AM, FM, and PM. This STILO is useful for the AIPAA, the coupled VCO array, an the MMIC structure.

• Journal of Industrial Technology
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• v.11
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• pp.43-53
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• 1991

Two kinds of simple active oscillators are proposed and analyzed assuming that operational amplifier has two-poles frequency characteristics. The first circuit is composed of one operational amplifier, one resistor and one grounded capacitor. The second oscillator is realized with one operational amplifier and three resitors. Proposed oscillators have the low sensitivity of the oscillation frequency for little variations of the passive element values. By the experimental results obtained with Op-Amp. ${\mu}A741$, the simple oscillators can be useful for the frequency range $1.25 KHz{\leq}f_{01}{\leq}40KHz$ for the active-RC type or $45.45 KHz{\leq}f_{02}{\leq}400KHz$ for the active-R oscillator, and it is shown to transform the active-R oscillator circuit into the voltage controlled type. Therefore, two kinds of oscillator circuit are attractive for the IC realization, because they have one operational amplifier, one resistor and one grounded capacitor, or three resistors.

• Journal of Satellite, Information and Communications
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• v.1 no.1
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• pp.54-58
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• 2006

A new design for easily controlling operating frequency of an antenna-integrated planar oscillator is introduced. The oscillator circuit of a broadband negative-resistance active part and a passive load including a patch antenna. The patch resonance is used for determining the oscillation frequency. This design reduces the possibility of mismatch between antenna radiation and oscillation frequencies. To achieve optimum output power, load-pull simulation for the negative-resistance circuit is used. The load-pull simulation shows the feed point and the delay of feed line can affect the oscillation power. Two negative-resistance circuits capable of supporting oscillation over full C-band and X-band are fabricated. The oscillation frequency, output power and phase noise for different patch antennas are measured.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.234-238
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.32-36
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.8
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• pp.1622-1631
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• 1997

A 3-stages Active Microstrip Phased Array Antenn(AMPAA) is implemented using Injection-Locking Coupled Oscillators(ILCO). The AMPAA is a beam scanning active antenna with capability of electrical scanning by frequency varation of ILCO. The synchronization of resonance frequencies in array elements is occured by ILCO, and the ILCO amplifies the injection signal and functions as a phase shifter. The microstrip ptch is operated as a radiation element. The unilateral amplifier is a mutual coupling element of AMPAA, eliminates the reverse locking signal and controls the locking bandwidth of ILCO. The possibility of Monolithic Microwave Integrated Circuits(MMIC) of T/R module is proposed by simplified and integrated fabrication process of AMPAA. The 0.75.$lambda_{0}$ is fixed for a mutual coupling space to wide the scanning angle and minimize the multi-mode. The AMPAA has beam scanning angle of 31.4.deg., HPBW(Half Power Beam Widths) of 26.deg., directive gain of 13.64dB and side lobe of -16.5dB were measured, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.78-86
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• 1996

Solid-state devices can be directly integrated with a planar antenna to form active antenna elements. In this paper, the voltage controlled oscillator (VCO) is designed and fabricated at 2.4 to 2.5 GHz using a microstrip patch antenna. A varactor diode is used as avariable reactance. The predicted frequency tuning range of the VCO is 2.448 to 2.498 GHz in the design procedure and the fabricated VCO has 2.446 to 2.498 GHz frequency tuning range when the varactor tuning voltage is varied from 0 to 11V. Transmitted power output of the patch antenna which serves both as a rsonator and a radiating element for VCO is about 18 mW over this tuning range.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.283-286
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• 1999

A 2㎓, low noise, low power CMOS voltage-controlled oscillator (VCO) with an integrated LC resonator is presented. The design of VCO relies heavily on the on-chip spiral inductor. An optimized spiral inductor with Q-factor of nearly 8 is achieved and used for the VCO. The simulated result of phase noise is as low as -l14 ㏈c/Hz at an offset frequency of a 600KHz from a 2㎓ carrier frequency. The VCO is tuned with standard available junction capacitors, resulting in an about 400MHz tuning range (20%). Implemented in a five-metal 0.25${\mu}{\textrm}{m}$ standard CMOS process, the VCO consumes only 2㎽ from a single 2.5V supply. It occupies an active area of 620${\mu}{\textrm}{m}$$\times$720${\mu}{\textrm}{m}$.