• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.932-935
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• 2015

This paper proposes a rectifier using bootstrapping and active body biasing in $0.11{\mu}m$ RF CMOS process. The proposed rectifier employs the full-wave rectifying structure with cross coupling and increases the power conversion efficiency by reducing the threshold voltage and leakage current using bootstrapping and active bias biasing. Also, it has been designed to be applied to a wide range of applications from 13.56 MHz used in wireless power transmission to 915 MHz used in RFID. As a measured result, 80 % of power conversion efficiency is obtained when the input power is 0 dBm at $10k{\Omega}$ load resistance and 13.56 MHz. Also 40 % of power conversion efficiency is shown in 915 MHz.