• Journal of the korean academy of Pediatric Dentistry
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• v.33 no.4
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• pp.597-605
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• 2006

It is introduced that pit and fissure sealant is the most universal and effective to prevent occlusal dental caries. In processing of being applied the pit and fissure sealant, the various kinds of methods are developed to remove organic matters, plaque, microflora and debris in the pit and fissure for increasing the rates of maintain the sealant. Recently, the Er:YAG laser has been used as a new enamel surface treatment method. The purpose of this thesis is compared whether that enamel surface treatment method is superior to other methods or not. 1. 100mJ 5Hz Er:YAG lased enamel surface was similar to acid-etched enamel in SEM evaluation. 2, Mechanical preparation showed decreased microleakage when compared with acid-etching only, but no significant differences in both method. 3. After laser and acid-etching method showed decreased microleakage when compared with acid-etching only.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.41-46
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• 2003

In order to evaluate the sufficient etching time for successful bonding and also minimizing unnecessary mineral loss, the enamel surface roughness analysis was performed using confocal laser scanning microscopy. Sixty extracted sound human molar teeth were imbedded in the center of acrylic cylinder using self-curing clear resin exposing buccal surface, and then polished with series of SiC paper(220, 500, 800, 1000, 2000, 4000 grit). Each specimen was randomly assigned to six groups(N=10). 37% phosphoric acid was applied to the polished tooth surface for 10, 20, 30, 40, 50, 60 seconds respectively and washed with copious water. After the surface roughness analysis, five roughness parameters(Sa, Sq, Sz, Sdr, Ra) were statistically analysed by ANOVA and Duncan post hoc test. We found that the all five parameters had higher roughness value in 30 seconds etching time, especially parameter Sz showed the lowest value in 10 seconds etching time and the highest value in 30 seconds etching time compared with the other etching times(p<0.05).

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.17-20
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• 2000

We have enhanced the yield of 0.25 ${\mu}{\textrm}{m}$ T-gate $Al_{0.25}$G $a_{0.75}$As/I $n_{0.2}$G $a_{0.8}$As P-HEMT using three-layer E-beam lithography process and selective etching process. The three-layer resist structure (PMMA/copolymer/ PMMA=2000 $\AA$/3000 $\AA$/2000 $\AA$) and three developers (Benzene：IPA=1：1,Methanol：IPA =1：1,MIBK：IPA=1：3) were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. Also 1 wt% citric acid： $H_2O$$_2$：N $H_{4}$OH(200m1：4ml：2.2ml) solution were used for uniform gate recess. The etching selectivity of GaAs over $Al_{0.25}$G $a_{0.75}$As is measured to be 80. So these P-HEMT processes can be used in X-band MMIC LNA fabrication.ion.ion.ion.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• Journal of the Korean institute of surface engineering
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• v.46 no.3
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• pp.99-104
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• 2013

The simple and cost-effective microfabrication method of photosensitive glass (PSG) using metal patterning and blank exposure was proposed. Conventional photolithography for micromachining of PSG needs a costly quartz mask which has high transmittance as an optical property. However, in this study the process was improved through the combination of micro-patterned Ti thin film and blank UV exposure without quartz mask. The effect of UV exposure time as well as the DHF etching condition was investigated. UV exposure test was performed within the range from 3 min to 9 min. The color and etch result of PSG exposed for 5 min were the most clear and effective to etch more precisely, respectively. The etching results of PSG in diluted hydrofluoric acid (DHF) with a concentration of 5, 10, 15 vol% were compared. The effect on the side etch was insignificant while the etch rate was proportional as the concentration increased. 10 vol% DHF results not only high etch rate of 75 ${\mu}m/min$ also lower side etch value after PSG etching. This method facilitates the microfabrication of PSG with various patterns and high aspect ratio for applying to advanced applications.

• The Journal of Korean Academy of Prosthodontics
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• v.29 no.3
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• pp.75-86
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• 1991

Ion exchange strengthening is a chemical process whereby large alkali ions(such as potassium) are substituted for smaller ions(sodium) within the surfaces of glasses and ceramics, thereby reducing the thermal expansion coefficient of this surface region, and creating beneficial state of compressive stress within the near surface region. The purpose of this study was to determine the effects of ion exchange and etching treatments on the strength of some dental porcelains. Two feldspathic dental porcelains(Vitadur-N, G-Cera) were used in this study. A commercial ion exchange paste and etching gel containing 8% hydrofluoric acid were used for surface conditioning. Transverse strength was measured using a universal testing machine and the technique of EPMA(electron probe micro analysis) was used to access the potassium contents. The results were as follows: 1. Improvement in strength was only obtained by treating the surface placed in tension. 2. No changes in the dimensions of the treated specimens were detected when samples were measured with a micrometer. 3. There was significant increase in transverse strength of G-Cera IV group treated with etching and ion exchange, compared with G-Cera II group only treated with ion exchange. 4. From the results of EPMA test, increase in potassium contents was observed on the surface treated with ion exchange paste.

• Journal of the Korean Chemical Society
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• v.39 no.1
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• pp.1-6
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• 1995

The surface of a sapphire substrate used for hetero-epitaxy was chemically polished in a mixture of $H_3PO_4\;and\;H_2SO_4$ solution. The extent of etching for various crystal orientations was found to be dependent on the etching time at $315{\pm}2^{\circ}C$ and at the composition of $H_2SO_4 : H_3PO_4$=3 : 1. In addition, the etching rates of the substrates were investigated in the mixture of $H_2SO_4 : H_3PO_4$=3 : 1 by volume and in the temperature range of 280~320$^{\circ}C$. From the plot of log R against 1/T, the activation penergy ($(E_a)$) was found to be in the order of $({\bar1}012) > (10{\bar1}0) > (11{\bar2}0) > (0001)$ plane. After removing the surface layers of the sapphire with (0001), $({\bar1}012),\;(10{\bar1}0)\;and\;(11{\bar2}0)$ plane by a thickness of 64.6, 46.5, 16.2 and 5.1 ${\mu}m$, respectively, the morphology of the resulting surface was observed by SEM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.40-44
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• 2022

Wet etching of α-Ga₂O₃ epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga₂O₃ etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75℃, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga₂O₃ in the 35 % HCl solution was dominated by the reaction-limited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.369-374
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• 2000

In order to investigate the effects of addition of 1M sulfuric acid to the etching solution or 1M hydrochloric acid on the etching behavior of aluminum foil for electrolytic capacitors, the changes in the density of etch pit, the length and diameter of etch tunnels and the capacitance were analyzed using SEM, TEM, LCR meter etc. Sulfate ion as a corrosion inhibitor was contributed to the increase of the surface area comparing with chloride ion. By adding sul-furic acid the density of etch pit and the length of etched tunnel increased and the diameter of the tunnel decreased, resulting in the increase of capacitance. It was also shown that the capacitance decreased when the current density was below $0.9A/\textrm{cm}^2$, while remarkably increased in the other case.