• 한국세라믹학회지
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• 제43권1호
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• pp.33-37
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• 2006

For producing the fine ribs structure of plasma display panel, the metal ions of barrier materials during the etching process should be understood on the etching mechanism with etching conditions. Etching was done on bulk glasses of the $BaO_B_2O_3-ZnO$ system with $HNO_3$ solution at $40^{\circ}C$. The surface structure of glasses and ion dissolution were analyzed by ICP (Inductive Coupled Plasma measurement). The structure and surface of the etched bulk glass were investigated by using scanning electron microscopy and nanoindenter. As a result, Ba (3-35 ppm/min) and Zn (2-27 ppm/min) ions as major components were leached in the solution and the leached layers were found to be phosphor-rich surface layers. A decrease of the bridge oxygen and relative increase of non bridge oxygen in the etched glass were found by X-ray photoelectron spectroscopy.

• 대한치과교정학회지
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• 제37권4호
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• pp.283-292
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• 2007

새로운 접착 시스템의 개발로 브라켓의 접착 과정이 단순화되고 있는 추세이다. 본 연구에서는 통상적인 산 부식 방법과 더불어 수종의 교정용 및 수복용 self etching primer를 이용하여 브라켓을 접착한 후 전단결합강도를 측정하고 접착 파절 양상을 비교함으로써 self etching primer 유용성을 평가하였다. 교정 치료를 위해 발거한 상, 하악 소구치 75개를 레진 블록에 매몰하여 시편을 제작하였고, 산 부식이 필요한 Transbond XT primer와, 4종의 self etching primer (Transbond Plus Self Etching Primer, Unifill Bond, Clearfil SE bond, Adhese)를 각각 이용하여 브라켓을 접착한 후, 만능시험기로 전단결합강도를 측정하고, 브라켓 기저면을 광학현미경으로 관찰하여 접착 파절 양상을 관찰하였다. 접착제 잔류지수를 비교한 결과, 통계적으로 유의한 차이는 없었으나, 인산 처리군이 self etching primer 처리군에서 보다 낮은 값을 보여, self etching primer 처리군이 인산 처리군 보다 법랑질-레진 접착계면 부위에서의 파절이 많이 일어나는 경향이 있었음을 알 수 있었다. Self etching primer 처리군에서의 전단결합강도는 37% 인산 처리군의 전단결합강도보다 낮았지만(p < 0.05), 임상적으로 유용한 수준 이상이었으며, self etching primer 처리군 내에서 각각의 전단결합강도는 유의한 차이를 보이지 않았다 (p > 0.05). 따라서 self etching primer를 이용할 경우, 기존의 산 부식법에 비하여 다소 낮은 전단결합강도를 보이지만 임상적으로 충분히 사용 가능하다고 생각된다.

• 한국분말재료학회지
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• 제22권1호
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• pp.15-20
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• 2015

The composite of porous silicon (Si) and amorphous carbon (C) is prepared by pyrolysis of a nano-porous Si + pitch mixture. The nano-porous Si is prepared by mechanical milling of magnesium powder with silicon monoxide (SiO) followed by removal of MgO with hydrochloric acid (etching process). The Brunauer-Emmett-Teller (BET) surface area of porous Si ($64.52m^2g^{-1}$) is much higher than that before etching Si/MgO ($4.28m^2g^{-1}$) which indicates pores are formed in Si after the etching process. Cycling stability is examined for the nano-porous Si + C composite and the result is compared with the composite of nonporous Si + C. The capacity retention of the former composite is 59.6% after 50 charge/discharge cycles while the latter shows only 28.0%. The pores of Si formed after the etching process is believed to accommodate large volumetric change of Si during charging and discharging process.

• 한국정밀공학회지
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• 제21권4호
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• pp.32-38
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• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• 한국표면공학회지
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• 제30권1호
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• 멤브레인
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• 제19권4호
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• pp.317-323
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• 2009

본 연구는 전자 및 반도체 산업의 각종 에칭공정에서 발생되는 중금속 함유 산성 폐에칭액을 NF 막분리법을 이용하여 에칭액 회수와 중금속 처리를 효율적으로 수행하기 위한 NF 막공정의 운전조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 3가지 종류의 상용 NF 막(General Electric Co. Duraslick NF-4040 막, Dow Co. Filmtec LP-4040 막 및 Koch Co. SelRO MPS-34 4040 막)을 대상으로 $Pb^{+2}$ 중금속을 함유한 모의 질산 폐에칭액의 회분식(dead-end) 막여과 실험을 수행하여 폐에칭액의 투과 플럭스와 $Pb^{+2}$ 중금속 이온의 총괄 배제도를 측정하여 폐에칭액 처리에 우수한 NF 막을 선정하였다. 실험결과 질산용액에의 막 보관기간이 길수록, 질산용액의 pH가 낮을수록 산에 의한 막의 손상이 심해졌으며, 질산에 의한 막의 손상은 SelRO MPS-34 4040 < Duraslick NF-4040 < Filmtec LP-4040 막의 순서로 심하게 일어났다. 또한 질산용액에의 막 보관기간이 길수록, 질산용액의 pH가 낮을수록 $Pb^{+2}$ 이온의 배제도가 낮아졌으며, 배제도 값은 Duraslick NF-4040 막의 경우에는 95% 수준의 초기 배제도 값에서 질산용액에의 4달 보관 후에는 20% 수준으로, SelRO MPS-34 4040 막의 경우에는 초기 85% 수준에서 4달 후 65% 수준으로, Filmtec LP-4040 막의 경우에는 초기 90% 수준에서 4달 후 10% 이하 수준으로까지 감소하였다. 3종류의 상용 NF 막 중 내산성 용도로 개발된 SelRO MPS-34 4040 막이 중금속 함유 산성 폐에칭액의 재생에 가장 적합하였다.

• 대한치과보철학회지
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• 제45권5호
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• pp.589-600
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• 2007

Statement of Problem: Titanium has many advantages of high biocompatibility, physical porperties, low-weight, low price and radiolucency, but it is incompatible with conventional dental porcelain due to titanium's oxidative nature. Many previous studies have shown that they used the method of sandblast surface treatment prior to porcelain application, the researchs are processing about the method of acid etching or surface coating. Purpose: The purpose of this research is to study the effect on bond strength between titanium and porcelain when using macro-surface treatment and micro-surface treatment and macro and micro surface treatment. Material and method: In this study, we evaluated the bond strength by using 3-point bending test based on ISO 9693 after classified 7 groups-group P : polished with #1200 grit SiC paper, group SS : sandblasted with $50{\mu}m$ aluminum oxides, group LS : sandblasted with $250{\mu}m$ alumium oxides, group HC : treated with 10% hydrochloric acid, group NF : treated with 17% solution of fluoric acid and nitric acid, group SHC : treated with 10% hydrochloric aicd after sandblsting with $50{\mu}m$ alumium oxides, group SNF treated with 17% solution of fluoric acid and nitric acid. Results : Within the confines of our research, the following results can be deduced. 1. Group SS which was sandblasted with $50{\mu}m$ aluminum oxides showed the highest bond strength of 61.74 MPa and significant differences(P<0.05). The bond strengths with porcelain in groups treated acid etching after sandblasting decreased more preferable than the group treated with sandblasting only. It gives significant differences(P<0.05). 2. After surface treatments, the group treated with sandblasting showed irregular aspect formed many undercuts, in the SEM photographs. The group treated with hydrochloric acid had the sharp serrated surfaces, the group treated with the solution of fluoric acid and nitric acid had the smooth surfaces, the group with sandblasting and hydrochloric acid had irrigular and porous structure, the group with sandblasting and the solution of fluoric acid and nitric acid had crater-like surfaces. But all of the groups treated with acid etching was not found and undercut. Conclusion: In above results, average surface roughness increase, bond strength also increase, but surface topographs influences more greatly on bond strengths.

• 자원리싸이클링
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• 제16권1호
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• pp.59-67
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• 2007

실리콘 웨이퍼 제조공정 중 발생되는 초산, 질산 및 불산을 함유한 3성분계 폐혼산으로부터 개별산으로 분리하여 재활용할 목적으로 용매추출법을 적용하였다. 각 산의 분리를 위해 사용한 추출제로는 초산의 경우는 EHA(2-Ethylhexlalcohol)를 사용하였고, 질산과 불산의 경우에는 TBP(Tri-butylphosphate)를 사용하여 각 산의 분리과정에 대한 공정설계를 위한 기초 data를 얻고자 하였다. 3성분계 폐혼산에서 초산을 추출 분리하고 이후 추출여액 중 질산 및 불산을 순차적으로 추출 분리 할 수 있는 연속공정개발을 위하여 기초 실험 자료와 McCabe-Thiele해석을 통해 최적 투입유량비(O/A), 소요단수(Stage) 등을 결정하였다. 분석 결과 혼산으로부터 초산의 회수율은 90%이상 이었으며 초산 추출여액에서 질산의 회수율은 90%, 최종 추출잔류액에서 불산의 회수율은 67%이상 이었다.

• 대한치과기공학회지
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• 제38권3호
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• pp.175-183
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• 2016

Purpose: Observation of Oxide Film Formation and Bonding Strength according to surface treatment of Co-Cr Alloy for porcelain fused to Metal. Methods: metal specimens $0.5mm{\times}25mm{\times}4mm$ in size were made using Co-Cr alloys for porcelain fused to metal crown (Heraenium P, Tae jung Medis). Dental porcelain $0.5mm{\times}25mm{\times}4mm$ in size was sintered on the metal specimens after changing the etching time, sandblasting condition, and heat treatment temperature. Subsequently, the bonding strength was compared by the three-point flexural strength test using a universal testing machine (UTM) to observe the fracture surface and oxidized layers. Results: With regard to the experimental group treated with acid-etching, Specimen 1 treated for 25 minutes (B-3) showed the highest bonding strength, and Specimen 2 treated only with sandblasting showed the most excellent bonding force at 3.5 bar (C-3). With regard to the experimental group treated with sandblasting at 3.5 bar after acid-etching for 25 minutes, Specimen 3 with heat treatment at $980^{\circ}C$ (D-3) showed the highest bonding strength. Conclusion: The specimen which went through both sandblasting and etching, showed an excellent ceramicmetal bond strength.

• 전기전자학회논문지
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• 제13권4호
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• pp.23-27
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• 2009

실리콘 기판 상에 MBE (molecular beam epitaxy)로 형성된 GaSb 기반 p-channel HEMT 소자를 제작하기 위하여 오믹 접촉 형성 공정과 식각 공정을 연구하였다. 먼저 각 소자의 절연을 위한 메사 식각 공정 연구를 수행하였으며, HF기반의 습식 식각 공정과 ICP(inductively coupled plasma)를 이용한 건식 식각 공정이 모두 사용되었다. 이와 함께 소스/드레인 영역 형성을 위한 오믹 접촉 형성 공정에 관한 연구를 진행하였으며 Ge/Au/Ni/Au 금속층 및 $300^{\circ}C$ 60초 RTA공정을 통해 $0.683\;{\Omega}mm$의 접촉 저항을 얻을 수 있었다. 더불어 HEMT 소자의 게이트 형성을 위한 게이트 리세스 공정을 AZ300 현상액과 citric산 기반의 습식 식각을 이용하여 연구하였으며, citric산의 경우 소자 구조에서 캡으로 사용된 GaSb와 베리어로 사용된 AlGaSb사이에서 높은 식각 선택비를 보였다.