• Proceedings of the Korea Air Pollution Research Association Conference
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• 2006.04a
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• pp.420-421
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• 2006

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.1067-1069
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• 2010

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2010.04a
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• pp.425-426
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• 2010

• Journal of Korean Society of Environmental Engineers
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• v.22 no.2
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• pp.203-210
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• 2000

The preparative methods of a chitosan-deposited activated carbon and its characteristics were studied by using three kinds of chitosan with different degree of deacetylation and average molecular weight. The procedure was consisted of the dissolution of chitosan into acid solution, impregnation of activated carbon, agitation, evaporation, and drying. When the chitosan-dissolved acid and its concentration, amounts of chitosan deposited, and agitation conditions were changed, the specific surface area, deposition state on surface, and stability were investigated, and amounts of Cr(VI) adsorbed was measured. In the preparation process, it was proper to agitate the chitosan-dissolved acetic acid solution at room temperature for 1hr. In the deposition of chitosan with low molecular weight, the specific surface area of activated carbon was greatly decreased even at low chitosan loading, but in the case of high molecular weight it was not nearly changed to 10wt% loading. It was known that chitosan was uniformly and physically deposited on activated carbon. The chitosan-deposited activated carbon was stable into the solution over about pH 6. The removal of Cr(VI) was remarkably enhanced by adding the adsorption function of chitosan to the surface of activated carbon with about 5wt% chitosan. It may be therefore used as an adsorbent for removing the pollutants in air and wastewater.

• Journal of Soil and Groundwater Environment
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• v.12 no.3
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• pp.29-35
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• 2007

Titanium was oxidized with oxygen plasma and calcinated with rapid thermal annealing for degradation of humic acid dissolved in water. Titania photocatalytic plate was produced by titanium surface oxidized with oxygen plasma by Plasma Enhanced Chemical Vapor Deposition (PECVD). RF-power and deposition condition is controlled under 100 W, 150 W, 300 W and 500 W. Treatment time was controlled by 5 min and 10 min. The film properties were evaluated by the X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). From the experimental results, we found the optimal condition of titania film which exhibited good performance. Moreover photocatalytic capacity was about twice better than thermal spray titania film, and also as good as titania powder.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.60-65
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• 1998

Deposition conditions, surface morphology, and electrical properties of polyamic acid alkylamine salts (PAAS) Langmuir-Blodgett(LB) films have been investigated through a study of surface pressure-area $\pi$-A isotherms, AFM (atomic force microscopy), and current-voltage characteristics. To obtain the optimum conditions of film deposition, the $\pi$-A isotherms were examined by varying temperature, barrier moving speed, dipping speed, spreading amount of solution etc. The Z-type LB films were made at the surface pressure of 5 mN m-1 and 25 mN m-1 for the AFM study; the former surface pressure forms the gas phase and the latter one forms the solid phase. The LB film made in the gas phase show domains with a size of about 200 A diameter and 70 A height. However, the LB films made in the solid phase show a very smooth surface with 2 A surface roughness. In the current-voltage characteristics measured along the perpendicular direction of the films, ohmic conduction has been observed below 105 V cm-1 and the calculated electrical conductivity is about 10-13 S cm-1. Nonohmic conduction has been observed above = 10-11 V cm and the conduction mechanism can be explained by the Schottky effect.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.1-6
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• 2017

This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.35-40
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• 2000

Teflon-like fluorocarbon thin film was deposited on various substrates by vapor deposition using PFDA (perfluorodecanoic acid). The fluorocarbon films were characterized by static/dynamic contact angle analysis, VASE (Variable-angle Spectroscopic Ellipsometry) and AFM/LFM (Atomic/Lateral Force Microscopy). Based on Lewis Acid/Base theory, the surface energy ($S_{E}$) of the films was calculated by the static contact angle measurement. The work of adhesion (WA) between de-ionized water and substrates was calculated by using the static contact data. The fluorocarbon films showed very similar values of the surface energy and work of adhesion to Teflon. All films showed larger hysteresis than that of Teflon. The roughness and relative friction force of films were measured by AFM and LFM. Even though the small reduction of surface roughness was found on film on $SiO_2$surface, the large reduction of relative friction farce was observed on all films. Especially the relative friction force on TEOS was decreased a quarter after film deposition. LFM images showed the formation of "strand-like"spheres on films that might be the reason far the large contact angle hysteresis.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• Polymer(Korea)
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• v.32 no.5
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• pp.497-500
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• 2008

Polystyrene foam (styrofoam) was treated with low-temperature oxygen plasma by means of immobilization and grafting techniques in order to modify its hydrophobic surface property to hydrophilic one using hydrophilic monomers of acrylic acid and acrylamide, and its surface chemical structure, morphology, and hydrophilicity were examined by ESCA, field emission scanning electron microscope (FESEM), and contactangle meter. The experimental evidences, such as the increases of O/C and N/C ratios in ESCA spectrum, thin film deposition, decrease in contact-angle, strongly suggested that the plasma treatments were useful methods for the preparation of hydrophilic surface. Contact angle diminished drastically from $84^{\circ}$ to $18{\sim}19^{\circ}$. Acrylamide, compared to acrylic acid, appeared to play a decisive role, and to be more powerful agent for improving its surface hydrophilicity.