• 생명과학회지
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• 제15권2호
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• pp.311-315
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• 2005

Pparaquat의 전자수용 및 방출에 대한 작용을 검토한 결과는 다음과 같다. Rat mitocondria분산액에 paraquat를 첨가하였을 때 반응액이 청색으로 변색되었으며 Aluminium 박 또는 동전극을 장치한 photo cell중에서 paraquat에 전류를 통한 경우에도 음극에서부터 청색으로 변색되기 시작하여 660 nm에서 높은 홉광도를 나타내었다. 이 착색반응은 반응액에 산소를 첨가함으로서 탈색되었다. Paraquat에 $H^+$을 첨가하고 전류를 통한 결과 340 nm에서의 홉광도가 증가되었으며 경시적인 흡광도 증가의 모양은 $NAD^+$에 전류를 통한 경우와 거의 일치하였다. 이상의 결과로부터 paraquat가 전자를 수용 또는 방출할 수 있음이 확인되었고 이러한 paraquat의 작용이 생체내에 이화작용에서 생성되는 전자를 포획하고 산소에 직접 넘겨줌으로써 cytochrome 호흡쇄로의 단계별 전자전달계가 차단되어 급성독성을 일으키는 요인으로 추정된다.

• 한국물환경학회지
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• 제20권5호
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• pp.480-487
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• 2004

This study was conducted to find the effect of electron acceptors on the formation of granular sludge by using four different types of electron acceptors. The phosphorous uptake, denitrification, and sulfate reduction in anoxic modes were simultaneously occured because of the presence of the polyphosphate accumultating organism(PAO) that utilize nitrate and sulfate as an electron acceptor in the anoxic zone. Denitrirying phosphorous removal bacteria(DPB) was enriched under anaerobic/anoxic/aerobic condition with a nitrate as an electron acceptor, and desulfating phosphorous removal bacteria(DSPB) was enriched under anaerobic/anoxic/aerobic condition with a sulfate as an electron acceptor. Polyphosphate accumulating organism(PAO) were enriched in the anaerobic/aerobic SBR. PAO took up acetate faster than DPB and DSPB during the aerobic phase. The sludge with nitrate and sulfate as an electron acceptors grew as a granules which possessed high activity and good settleability. In the anaerobic/aerobic modes, typical floccular growth was observed. In the result of bench-scale experiment, simultaneous reactions of phosphorus uptake, denitrification and sulfate reduction were observed under anoxic condition with nitrate and sulfate as an electron acceptors. These results demonstrated that the anaerobic/anoxic modes with nitrate and sulfate as an electron acceptors played an important role in the formation of the sludge granulation.

• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.3052-3058
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• 2014

In this article, we have designed and synthesized a novel donor-${\pi}$-acceptor (D-${\pi}$-A) type porphyrin-based sensitizer (denoted UI-5), in which a carboxyl anchoring group and a 9,9-dimethyl fluorene were introduced at the meso-positions of porphyrin ring via phenylethynyl and ethynyl bridging units, respectively. Long alkoxy chains in ortho-positions of the phenyls were supposed to reduce the degree of dye aggregation, which tends to affect electron injection yield in a photovoltaic cell. The cyclic voltammetry was employed to determine the band gap of UI-5 to be 1.41 eV based on the HOMO and LUMO energy levels, which were estimated by the onset oxidation and reduction potentials. The incident monochromatic photon-to-current conversion efficiency of the UI-5 DSSC assembled with double-layer (20 nm-sized $TiO_2$/400 nm-sized $TiO_2$) film electrodes appeared lower upon overall ranges of the excitation wavelengths, but exhibited a higher value over the NIR ranges (${\lambda}$ = 650-700 nm) compared to the common reference sensitizer N719. The UI-5-sensitized cell yielded a relatively poor device performance with an overall conversion efficiency of 0.74% with a short circuit photocurrent density of $3.05mA/cm^2$, an open circuit voltage of 0.54 mV and a fill factor of 0.44 under the standard global air mass (AM 1.5) solar conditions. However, our report about the synthesis and the photovoltaic characteristics of a porphyrin-based sensitizer in a D-${\pi}$-A structure demonstrated a significant complex relationship between the sensitizer structure and the cell performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.53-54
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• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

• 한국추진공학회지
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• 제20권2호
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• pp.75-85
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• 2016

감쇠기를 사이에 두고 여폭약과 수폭약으로 충전된 파이로 착화기는 격벽의 압력 감쇠 현상과 고에너지 물질의 충격 점화 특성을 갖는다. 고폭약의 폭굉 반응 및 비반응 물질 통과에의 폭압 감쇠와 더불어 격벽의 형상 변화를 모사하기 위해서는 충격 전달에 의한 gap test의 폭굉 모델링이 필요하다. 본 연구에서는 오일러리안 레벨셋 기법이 적용된 다중물질 하이드로 코드를 사용하여 pentolite 작약과 열폭압 RDX의 폭발 반응 및 PMMA gap을 통과하는 충격파 전달을 해석함으로써 화약-격벽간 상호작용 및 임계 두께, 음향 임피던스, go/no-go 기폭 점화에 대한 특성을 정량화하였다.

• Journal of Microbiology and Biotechnology
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• 제30권9호
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• pp.1436-1442
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• 2020

Amylosucrase (ASase, E.C. 2.4.1.4) is capable of efficient glucose transfer from sucrose, acting as the sole donor molecule, to various functional acceptor compounds, such as polyphenols and flavonoids. An ASase variant from Deinococcus geothermalis, in which the 226^th alanine is replaced with asparagine (DgAS-A226N), shows increased polymerization activity due to changes in the flexibility of the loop near the active site. In this study, we further investigated how the mutation modulates the enzymatic activity of DgAS using molecular dynamics and docking simulations to evaluate interactions between the enzyme and phenolic compounds. The computational analysis revealed that the A226N mutation could induce and stabilize structural changes near the substrate-binding site to increase glucose transfer efficiency to phenolic compounds. Kinetic parameters of DgAS-A226N and WT DgAS were determined with sucrose and 4-methylumbelliferone (MU) as donor and acceptor molecules, respectively. The k_cat/K_m value of DgAS-A226N with MU (6.352 mM^-1min^-1) was significantly higher than that of DgAS (5.296 mM^-1min^-1). The enzymatic activity was tested with a small phenolic compound, hydroquinone, and there was a 1.4-fold increase in α-arbutin production. From the results of the study, it was concluded that DgAS-A226N has improved acceptor specificity toward small phenolic compounds by way of stabilizing the active conformation of these compounds.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.245.2-245.2
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• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

• Journal of Microbiology and Biotechnology
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• 제14권5호
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• pp.1075-1080
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• 2004

Dextransucrase (DSRB742) from Leuconostoc mesenteroides NRRL B-742CB is a glucosyltransferase that catalyzes the synthesis of dextran using sucrose, or the synthesis of oligosaccharides when acceptor molecules, like maltose, are present. The DSRB742 gene (dsrB742) was cloned and the properties were characterized. In order to identify critical amino acid residues, the DSRB742 amino acid sequence was aligned with glucosyltransferase sequences, and three amino acid residues reported as sucrose binding amino acids in Streptococcus glucosyltransferases were selected for site-directed mutagenesis experiments. Asp-533, Asp-536, and His-643 were independently replaced with Ala or Asn. D533A and D536A dextransucrases showed reduced dextran synthesis activities, 2.3% and 40.8% of DSRB742 dextransucrase, respectively, and D533N, D536N, H643A, end H643N dextransucrases showed complete suppression of dextran synthesis activities altogether. Additionally, D536N dextransucrase showed complete suppression of oligosaccharide synthesis activities. However, modifications at Asp-533 or at His-643 retained acceptor reaction activities in the range of 8.4% to 21.3% of DSRB742 acceptor reaction activity. Thus at least two carboxyl groups of Asp-533 and Asp-536, and His-643 as a proton donor, are essential for the catalysis process.

• 대한전자공학회논문지SD
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• 제46권2호
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• pp.9-14
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• 2009

본 연구에서는 sapphire 기판위에 P (phosphorus) 도핑된 ZnO 박막을 제작한 후, 산소 분위기에서 후열 처리 온도가 박막의 전기적 및 광학적 특성에 미치는 영향에 대해서 조사하였다. XRD 측정 결과, 후열 처리 온도에 무관하게 모든 박막이 c축 배향성을 나타내었다. Hall 측정 결과, $850^{\circ}C$에서 후열 처리한 박막에서만 p형 전도 특성이 관찰되었다. 이때의 홀 캐리어 농도와 홀 이동도는 각각 $1.18{\times}1016cm^{-3}$과 $0.96cm^2/Vs$의 값을 나타내었다. 저온 PL 측정 결과, $850^{\circ}C$에서 후열 처리한 박막의 경우 p형 특성을 나타내는 상당량의 억셉터가 관련된 A0X (3.351eV), FA(3.283eV) 및 DAP (3.201eV) 피크가 관찰되었다. 향후 P 도핑된 ZnO 박막의 공정 조건과 후열 처리 조건을 최적화시킨다면, 차세대 광소자에 응용될 수 있는 매우 유망한 재료로 주목받을 것으로 기대된다.