• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.175-182
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• 2000

(A hybrid-type wireless infrared data communication module was fabricated by using the light emitting andabsorption diodes with the one-chip of integrated digital circuits. The light emitting diode with the peak spectrum of 850 nm was made from compound semiconductor material of AIGaAs and shows high speed signal transmission with the delay time of 60 nsec for the light direction angle of 30". The Si PIN photodiode showsthe good absorption rate for the range of wavelength of 450-1050 nm and convex-type epoxy lens was utilized for the spectrum filtering on the visible-range spectrum below 750 nm, The data transmission speed is 115.2 kbps and the fabricated module satisfies on the IrDA 1.0 SIR standard requirements.)ments.)

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• Textile Coloration and Finishing
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• v.19 no.6
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• pp.28-34
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• 2007

The optical and physical properties of alkyl-substituted anthraquinoid dyes were investigated in terms of dyeing of pure polypropylene fiber. The length of alkyl substituents of the dyes did not affect the molar extinction coefficient and maximum absorption wavelength of them. The use of a double-tailed cationic surfactant, didodecyldimethylammonium bromide(DDDMAB), could make the hydrophobic dyes dispersed in water effectively. As the amount of DDDMAB increased, the average particle size of dye dispersion decreased. Maximum color strength of the fabrics was shown in the case that 1.5 molar ratio of DDDMAB was used. As for the fastness properties, commercially acceptable result was obtained in general.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.43-48
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• 2004

Undoped and $Co^{2+}$-doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$. and $CaIn_2Se_4$ single crystals were grown by using the chemical transport reaction method The temperature dependence of the optical energy gap was well fitted by the Varshni equation. In the Co2+ - doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$, and $CaIn_2Se_4$ single crystals, two groups of impurity optical absorption peaks due to Co2+ sited in a Td symmetry were observed in the wavelength regions of 600 900 nm and 1350 1950 nm at 11 K.耀

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.68-72
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• 1997

Using one of the absorption lines of $^{13}C_2H_2$ molecules near the zero dispersion wavelength(1549.49nm) of dispersion shifted fiber, we stabilized center frequency of an optical fiber Fabry-Perot filter. The free spectral range of the filter is 100 GHz for 100 GHz channel allocation. For equi-spaced three channel multiplexing, channel locking of three DFB-LDs to transmission peaks of the fiber Fabry-Perot filter was tried. To investigate the effect of dithering current applied to each DFB-LD, the change of DFB-LD linewidth was measured.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.449-454
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• 2004

The optical limiter is an optical component which reduces laser beam intensity for the protection of eyes and light sensors. Carbon nanotube is now known as a highly efficient optical limiting material. Optical limiting effect of the multi-walled carbon nanotube suspensions, in several kinds of solvents such as distilled water, chloroform, ethanol and ethylene glycol, were measured in the range from room temperature to near to the boiling points of the solvents. The pulsed Nd:YAG laser whose wavelength is 1064 nm and pulse duration is 6 ns was used as a light source. The experimental result shows that the limiting efficiency was reduced as the temperature increased, and the suspension which has lower boiling point, viscosity and surface tension has highest efficiency.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1280-1284
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• 2007

A series of Ca1-xSrxS:Eu (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Eu phosphors have a strong absorption at 455 nm, which corresponds to the emission wavelength of a blue LED. The emission peak of Ca1-xSrxS:Eu is blue shifted from 655 to 618 nm with increasing Sr content. The characteristics of Ca1-xSrxS:Eu phosphors make them suitable for use as wavelengthtunable red-emitting phosphors for three-band white LEDs pumped by a blue LED. In support of this, we fabricated a three-band white LED by coating SrGa2S4:Eu and Ca0.6Sr0.4S:Eu phosphors onto a blue LED chip, and characterized its optical properties.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.647-651
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• 2007

In order to investigate the excited-state intramolecular proton transfer (ESIPT) process of dihydroxyanthraquinones (DHAQ; 1,5-DHAQ and 1,8-DHAQ) in organic-inorganic hybrid matrices, transparent SiO2, SiO2- Al2O3, and Al2O3 matrices chemically bonded with DHAQ were prepared using a sol-gel technique. The absorption maxima of 1,5- and 1,8-DHAQ in SiO2 matrices are observed at around 420 nm, whereas those of DHAQ in both SiO2-Al2O3 and Al2O3 matrices are markedly shifted to longer wavelength compared with those in SiO2 matrix. This indicates that DAHQ forms a chemical bond with an Al atom of Al2O3. The DHAQ in SiO2 matrix shows a markedly Stokes-shifted emission which is originated from the ESIPT in DHAQ. Based on the emission lifetimes of DHAQ, the ESIPT of DHAQ was found to be strongly affected by the chemical interaction with Al atom in the Al2O3-related matrices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.587-587
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• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.