• Journal of Photoscience
• /
• v.9 no.2
• /
• pp.454-456
• /
• 2002

It is important to determine the action spectrum of UV-B radiation contained in the sunlight to estimate the risk of skin cancer. We have investigated action spectra for induction of apoptosis and reproductive cell death in L5178Y cells using the Okazaki Large Spectrograph at NIBB. L5178Y cells were exposed to light at different wavelengths in UV-B or UV-A region. Frequencies of apoptosis induction and reproductive cell death were determined by counting cells with chromatin condensation, and by the colony formation assay, respectively. The measured sensitivity spectra for the two end-points were in very good agreement. Sensitivity decreased steeply with increase of wavelength in UV-B region and remains nearly constant in UV-A region. The action spectra were also slightly steeper than that for the minimum erythematic dose (MED), but very similar to the light absorption spectrum of DNA in UV-B region. On the other hand, the spectra for both endpoints were similar to MED spectrum but not DNA spectrum in the UV-A region. Also different time-course and morphological difference of apoptosis were found between UV-B (long time, fragmentation) and UV-A (short time, shrinkage) region. These results suggest that DNA damage induced by UV-B light triggers apoptosis and reproductive cell death, but other damaged targets (membrane, protein and so on) trigger these effects in UV-A region.

• Korean Journal of Materials Research
• /
• v.14 no.8
• /
• pp.529-534
• /
• 2004

$Sr_{4}Al_{14}O_{25}$ was synthesized by solid state reaction with flux. $H_{3}BO_3$ was used to synthesize $SrO-Al_{2}O_{3}$ phosphor system as a flux. The effect of doping system such as Eu+Dy, Eu, and Ce on the luminescent properties of $Sr_{4}Al_{14}O_{25}$ was investigated. Both PL spectra of $Sr_{4}Al_{14}O_{25}$:Eu and $Sr_{4}Al_{14}O_{25}$:Eu+Dy excited at 390 nm showed greenish-blue emission at about 490 nm, while the emission wavelength was shifted to 400 nm by doping Ce. The reduction of $Eu^{3+}$ ions to $Eu^{2+}$ could be accomplished by the annealing process under $N_{2}^{+}$ vacuum atmosphere, and attributed to the emission at 490 nm. It is verified that $Sr_{4}Al_{14}O_{25}$:Eu phosphor is suitable for white LEDs became of a broad absorption band peaking at 390 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.514-520
• /
• 1997

A single component of $Sb_2O_3$ glass has been obtained by a rapid quenching method in vacuum. The linear refractive indices were measured as a function of wavelength from 500 nm to 1060 nm. The refractive index at $n_{3{\omega}}$/(633 nm) was as high as 2.00. The optical band gap was estimated as 3.38 eV from the optical absorption spectrum. The third-order nonlinear optical intensity was determined by the third harmonic generation (THG) method. The $\chi^{(3)}$value was as high as $5.68{\times}10^{-13}$esu, about 20 times larger than that of $SiO_2$ glass.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.4
• /
• pp.145-150
• /
• 2004

We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of $400^{\circ}C$ was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited $7.40\times 10^{-4}\Omega \textrm{cm}$. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85∼90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.2
• /
• pp.64-68
• /
• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• Publications of The Korean Astronomical Society
• /
• v.27 no.4
• /
• pp.183-184
• /
• 2012

We present the latest results from the Mission Program NIRLT, the NIR spectroscopic observations of brown dwarfs using the IRC on board AKARI. The near-infrared spectra in the wavelength range between 2.5 and $5.0{\mu}m$ is especially important to study the brown dwarf atmospheres because of the presence of non-blended bands of major molecules, including $CH_4$ at $3.3{\mu}m$, $CO_2$ at $4.2{\mu}m$, CO at $4.6{\mu}m$ and $H_2O$ around $2.7{\mu}m$. Our observations were carried out in the grism-mode resulting in a spectral resolution of ~ 120. In total, 27 sources were observed and 18 good spectra were obtained. We investigate the behavior of three molecular absorption bands, CO, $CH_4$ and $CO_2$, in brown dwarf spectra relative to their spectral types. We find that the $CH_4$ band appears in the spectra of dwarfs later than L5 and CO band is seen in the spectra of all spectral types. $CO_2$ is detected in the spectra of late-L and T type dwarfs.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.9
• /
• pp.2813-2817
• /
• 2014

A new magnetic semiconductor material was synthesized to enable separation after a liquid-type photocatalysis process. Core@shell-structured $CuFeS_2@TiO_2$ magnetic nanoparticles were prepared by a combination of solvothermal and wet-impregnation methods for photocatalysis applications. The materials obtained were characterized using X-ray diffraction, transmission electron microscopy, ultraviolet-visible, photoluminescence spectroscopy, Brunauer-Emmett-Teller surface area measurements, and cyclic voltammetry. This study confirmed that the light absorption of $CuFeS_2$ was shifted significantly to the visible wavelength compared to pure $TiO_2$. Moreover, the resulting hydrogen production from the photo-splitting methanol/water solution after 10 hours was more than 4 times on the core@shell structured $CuFeS_2@TiO_2$ nanocatalyst than on either pure $TiO_2$ or $CuFeS_2$.

• Current Photovoltaic Research
• /
• v.4 no.1
• /
• pp.1-7
• /
• 2016

Among the various types of solar cells, silicon based two terminal tandem solar cell is one of the most popular one. It is designed to split the absorption of incident AM1.5 solar radiation among two of its component cells, thereby widening the wavelength range of external quantum efficiency (EQE) spectra of the device, in comparison to that of a single junction solar cell. In order to improve the EQE spectra further and raise short circuit current density ($J_{sc}$) an optimization of the tradeoff between the top and bottom cell is needed. In an optimized cell structure, the $J_{sc}$ and hence efficiency of the device can further be enhanced with the help of light trapping scheme. This can be achieved by texturing front and back surface as well as a back reflector of the device. In this brief review we highlight the development of light trapping in the silicon based tandem solar cell.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.295-295
• /
• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.315-315
• /
• 2016

The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.