• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.83-90
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• 1994

We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.33-40
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• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.451-456
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• 2021

In order to improve the cell capacitance and scale down in capacitors of semiconductor memory devices, a stacked ONO structure has been introduced as a dielectric layer and thinning of these layers has been attempted continuously. However, many problems have emerged in the manufacturing process. In this study, L/L LPCVD system was used to suppress the growth of natural oxide film of about 10 Å, which was able to secure the capacitance of 3fF / cell. In addition, we investigated the effect of thinning of the dielectric film on the abnormal oxidation of the nitride film, and proposed a stable process control method for forming the dielectric film to ensure oxidation resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1149-1155
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• 2004

In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

• Journal of the Korean Society for Heat Treatment
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• v.2 no.1
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• pp.13-20
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• 1989

• Journal of Power Electronics
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• v.11 no.2
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• pp.163-172
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• 2011

Oxidation models of a rotor bar and end ring segment in an induction motor are presented to simulate the behavior of an induction machine working with oxidized rotor parts which are modeled as rotor faults in progress. The leakage inductance and resistance of the rotor parts arc different from normal values because of the oxidation process. The impedance variations modify the current density and magnetic flux which pass through the oxidized parts. Consequently, it causes the rotor asymmetry which induces abnormal harmonics in the stator current spectra of the faulty machine. The leakage inductances of the oxidation models are derived by the Ampere's law. Using the proposed oxidation models, the rotor bar and end ring faults in progress can be modeled and simulated with the motor current signature analysis (MCSA). In addition, the oxidation process of the rotor bar and end ring segment can motivate the rotor asymmetry, which is induced by electromagnetic imbalances, and it is one of the major motor faults. Results of simulations and experiments are compared to each other to verify the accuracy of the proposed models. Experiments are achieved using 3.7 kW, 3-phase, and squirrel cage induction motors with a motor drive inverter.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.497-502
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• 2008

BGA test sockets failed earlier than the expected life-time due to abnormal signal delay, shown especially at the low temperature ($-50^{\circ}C$). Analysis of failed sockets was conducted by EDX, AES, and XRD. A SnO layer contaminated with C was found to form on the surface of socket pins. The formation of SnO layer was attributed to the repeated Sn transfer from BGA balls to pin surface and instant oxidation of fresh Sn. As a result, contact resistance increased, inducing signal delay. Abnormal signal delay at the low temperature was attributed to the increasing resistivity of Sn oxide with decreasing temperature, as manifested by the resistance measurement of $SnO_2$.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.8
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• pp.1989-1998
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• 1995

Characteristics of the flame propagation for normal and abnormal combustion in hydrogen premixture in a cylindrical constant-volume combustion chamber are studied numerically. A detailed hydrogen oxidation kinetic mechanism, mixture transport properties and a model describing spark ignition process are used. The calculated pressure-time history of the stable deflagration wave propagation agrees well with the experiment. The ignition of the premixture in the unburned gas, initiated by the hot spot, causes a transition from deflagration to detonation under some initial temperature and pressure. Under the initial conditions with high temperature and pressure, excessive ignition energy initiates a strong blast wave and a detonation wave that follows. The chemical reaction in the detonation wave is much more vigorous than that in the deflagration wave and the peak pressure in the detonation wave is much higher than the equilibrium value.

• Journal of Magnetics
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• v.7 no.2
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• The Korean Journal of Nuclear Medicine
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• v.3 no.2
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• pp.23-27
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• 1969

Plasma glucose levels before and after oral glucose administration have been compared in a group of 76 thyrotoxic subjects and a group of 8 normal control subjects in order to study the effect of glucose loading in thyrotoxicosis. Following were the results: 1. The mean fasting plasma glucose level was elevated in the thyrotoxic group(95.5mg%) compared to normal control group (88mg%). 2. The peak of glucose tolerance curve is at 30 minutes after glucose administration in both groups, but its mean value was 44mg% higher in thyrotoxic group than in control group. 3. The plasma glucose levels returned towards the fasting level in the later stage of the test more rapidly in thyrotoxic group than in control group. 4. 69.6% of oral glucose tolerance tests were impaired in the thyrotoxic group, and the occurance of abnormal glucose tolerance could be related to the degree of thyrotoxicity, sex and age. 5. The mechanisms of the impaired glucose tolerance in thyrotoxicosis are thought to be related to an increased rate of glucose absorption from gastrointestinal tract, abnormal liver function with decreased hepatic glycogenesis, increased glucose oxidation, decreased pancreatic release of insulin, and genetic relationship between diabetes and thyrotoxicosis.