• Title/Summary/Keyword: Abnormal grain

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Abnormal Grain Growth in Ferrites

  • Ito, Shigeru
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 1999.09a
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    • pp.1-63
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    • 1999
  • Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructure of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in N$_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in NiFe$_2$O$_4$ and CoFe$_2$O$_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to vary their compositions or valencies at high temperatures. As the sintering proceeded, the number of large grains was increasing to form a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared to be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain in generated by the local activation of the stabilized grain boundaries, which is caused by the variation of compositions or valencies during sintering. It is concluded that the essence of the abnormal grain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of the grain boundaries.

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Effect of SiO2 on Abnormal Grain Growth and Single Crystal Growth in BaTiO3 (BaTiO3에서 SiO2 첨가에 의한 비정상 입성장과 단결정 성장)

  • 김재석;허태무;이종봉;이호용
    • Journal of the Korean Ceramic Society
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    • v.41 no.3
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    • pp.266-271
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    • 2004
  • A very small amount of SiO$_2$ was locally added in sintered BaTiO$_3$ ceramics and then heat-treated at 135$0^{\circ}C$. In the region where SiO$_2$ was not added, grain growth occurred very slowly. In the region where a very small amount of SiO$_2$ was added, however, grain growth occurred very actively. After long time annealing at 135$0^{\circ}C$, abnormal grains appeared only in the part where SiO$_2$ was added and grew up to 2 cm in size. In the grown abnormal grains or single crystals, (111) double or single twins were not observed. The growth of abnormal grains or single crystals was explained by formation of liquid phase in the region where SiO$_2$ was added. These results showed that centimeter-sized BaTiO$_3$ single crystals without (111) double or single twins could be fabricated by using abnormal grain growth.

Effect of SiC Particle Size on the Microstructure and Mechanical Properties Of Al2O3-SiC Composite (Al2O3-SiC 복합재료의 미세조직 및 기계적 물성에 미치는 SiC 원료분말의 크기 영향)

  • 채기웅
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.125-130
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    • 2004
  • The effect of SiC particle size on the microstructures and mechanical properties of A1$_2$O$_3$-SiC composite was investigated. Two types of SiC powders having average particle sizes of 0.15 ${\mu}{\textrm}{m}$ and 3 ${\mu}{\textrm}{m}$ were used. The grain growth in the specimen containing 0.15 ${\mu}{\textrm}{m}$ SiC was effectively inhibited due to the fine SiC particles. However, after the formation of some abnormal grains, fast and exaggerated grain growth occurred which led to the microstructure of large grains with irregular shape. Fracture strength decreased due to the abnormal large grains. On the other hand, for specimen containing 3 ${\mu}{\textrm}{m}$ SiC showed normal grain growth behavior from initial sintering stage. Large SiC particles, however, effectively inhibited exaggerated grain growth after nucleation of a few abnormal grains. As a consequence, microstructure consisted of homogeneous elongated grains. In the A1$_2$O$_3$-2.5SiC(0.15 ${\mu}{\textrm}{m}$)-2.5SIC(3 ${\mu}{\textrm}{m}$) composite fabricated by mixing the two types of SiC powder, abnormal grain growth occurred. However, the good fracture strength was maintained regardless of microstructural changes in this specimen.

Effect of $MnO_2$ Addition on the MIcrostructure and PTCR Characteristics in Semiconducting $BaTiO_3$ Ceramics (반도성 $BaTiO_3$ 세라믹스의 미세구조 및 PTCR 특성에 미치는 $MnO_2$ 첨가 효과)

  • 김준수;김홍수;백남석;이병하
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.567-574
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    • 1995
  • The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.

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Study on the Sintering Behavior and Abnormal Grain Growth with Ba/Ti ratio variation of $BaTiO_3$ Ceramics ($BaTiO_3$세라믹스에서 Ba/Ti비 변화에 따른 소결거동 및 비정상 입자성장에 대한 연구)

  • Choi, Jong-Sun;Kim, Ho-Gi
    • Korean Journal of Materials Research
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    • v.1 no.1
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    • pp.37-45
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    • 1991
  • In order to control the microstructures, the sintering behavior and abnormal grain growth with Ba/Ti ratio variation of $BaTiO_3$were investigated. The $BaTiO_3$powders used in this study were prepared by conventional calcination of $BaCO_3$ and $TiO_2$. The onset temperatures of the sintering were lowered and the densification was enhanced with increasing amounts of $TiO_2$ excess. These results are because of decrease of calcined particle sizes. A eutectic melt above temperature of $1320^{\circ}C$ did not assist the densification. Grain growth was strongly inhibited with increasing amounts of $TiO_2$ excess. The inhibition of grain growth caused abnormal grain growth due to inhomogeneous distribution of Ti-rich second phase.

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Growth Behavior and Mechanisms in Cemented Carbides

  • Yoon, Byung-Kwon;Kang, Suk-Joong L.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.891-892
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    • 2006
  • To test the correlation between grain shape and growth behavior we prepared WC-TiC-Co samples with rounded (Ti, W)C grains and faceted WC grains. The growth of rounded (Ti, W)C grains was normal. In contrast, the growth of faceted WC grains was abnormal or suppressed depending on the initial size of WC particles. These observations were explained using growth theories of crystals in a liquid and were also confirmed by a simulation using their growth equations. The present results thus demonstrate that the growth behavior of carbide grains in a liquid is governed only by their shape, irrespective of the presence of another phase.

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Dependence of Microstructure of Sintered $Y_3$Fe$_5$O$_{12}$ in Addition of CuO (CuO 첨가에 따른 $Y_3$Fe$_5$O$_{12}$ 소결체의 미세구조 변화)

  • 이재동;김광석;김성재;김태옥
    • Journal of the Korean Ceramic Society
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    • v.35 no.10
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    • pp.1014-1019
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    • 1998
  • As results of the study on the sinterbility of YIG at the low temperature using CuO as additive CuO com-pound which contain {{{{ { {Fe }_{2 }O }_{3 } }} was shown liquid in sintering process. YIG crystal dissolved into CuO compound liquid phase and then Y element which is considered no solubility in solid CuO compound moved to the grain during cooling. The abnormal grain growth up to 150${\mu}{\textrm}{m}$ at CuO 8.6mole% was shown due to shape accomdation reaction and local liquid distribution. The apparent density of YIG shows minimum at CuO 8.6 mole% due to abnormal grain growth and the saturation magnetization decrease dramatically at 32.5mole% due to orthoferrite formation.

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Contribution of the Interface Energies to the Growth Process of Cemented Carbides WC-Co

  • Lay, Sabine;Missiaen, Jean-Michel;Allibert, Colette H
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.332-333
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    • 2006
  • The driving forces and the probable processes of WC-Co grain growth are reanalysed from recent data of interface energy and microstructure. Grain growth is driven by the disappearing of the high energy WC/WC and WC/Co interfaces with habit planes different from {0001}, ${10\bar{1}0}$ and ${11\bar{2}0}$ facets and by the area decrease of the WC/WC and WC/Co interfaces with {0001} and ${10\bar{1}0}$ habit planes. Grain growth mainly results of dissolution-precipitation. Abnormal grains are likely formed by defects assisted nucleation.

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