• Current Photovoltaic Research
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• v.11 no.1
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• pp.13-17
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• 2023

Functional transparent electrode was achieved by metal oxide-metal-Metal oxide (OMO) structure. Tailoring of metal oxide and metal layers, optically transparent and electrically excellent OMO films were investigated. Silver (Ag) is adopted for the metal layer and Ag oxide (AgO) is reactively formed by flowing O₂ gas during the sputtering process. This spontaneous AgO formation from Ag simultaneously provides the good electrical interface with high transparency. Due to the feature of transparent electrode of OMO, it endows the shielding effect (SE) function of electromagnetic interference. Optically transparent and electrically conductive OMO electrode shows the high transmittance (83.7%) and low sheet resistance (6.5 Ω/☐) with SE of 29.54 dB.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1747-1752
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• 2012

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane (BTMSM) and oxygen mixed precursor by the chemical vapor deposition. The dielectric constant is measured by MIS(metal/insulator/Si) structure, but it could decrease the reliability because the uniformity is not assured. To research the dielectric constant of SiOC film, the range of low polarization was researched in SiOC film using the optical analysis and hardness, and then calculated the dielectric constant of SiOC film with amorphous structure of high degree. After annealing, the dielectric constant of SiOC film was decreased owing to the lowering of polarization, and FTIR spectra of the main bond was shifted to higher wave number. The main bond of 950~1200 cm-1 was composed of the Si-C and Si-O bonds. The intensity increases in Si-O bond infers the bonding strength became stronger than that of deposited film. Annealed SiOC film showed 2.06 in dielectric constant.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.52.2-52.2
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• 2011

본 연구의 목적은 CIGS 태양전지의 두 가지 TCO층 중 AZO를 제외한 intrinsic ZnO의 전자빔 처리 영향에 대한 특성 분석을 하고자 함이다. 또한 추후 CIGS 태양전지를 제조하여 적용 시 전자빔 처리 전후의 특성이 어떻게 변하는지를 알아보기 위한 사전 실험이다. Intrinsic ZnO는 RF magnetron sputter 를 이용하여 약 100nm의 두께로 증착 하였다. 이때 공정 압력을 변수로 RF power는 80W로 설정 하였으며 Ar 분압은 10mtorr, 5mtorr, 1mtorr로 각각 달리 하며 증착 하였다. 이후 전자빔 처리를 위해 각각의 시편에 Argon flow 7sccm 상태에서 DC power 3kW, RF power 300W의 세기로 전자빔 처리를 실시 하였다. 전자빔 처리에 따른 전기적, 구조적 특성을 분석하기위해 Hall measurement와 SEM, XRD, UV-vis spectroscopy을 사용하였다. 먼저 Hall measurement 측정을 통한 전기적 분석 결과 비저항이 무한대에서 약 $40m{\Omega}{\cdot}cm$로 감소된 결과를 도출 할 수 있었으며, $2{\sim}3.4{\times}10^{18}/cm^3$ 이상의 carrier density 가 측정 되었다. UV-vis spectroscopy를 이용한 투과도 측정결과 모든 시편에서 Band gap이 감소하는 결과를 보였다. SEM, XRD를 이용한 분석결과 결정성 및 grain의 크기가 증가하는 결과를 얻을 수 있었다.