• Clean Technology
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• v.22 no.1
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• pp.16-28
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• 2016

Textile industry is considered as one of the most polluting sectors in terms of effluent composition and volume of discharge. It is well known that the effluents from textile dying industry contain not only chromatic substances but also large amounts of organic compounds and insolubles. The azo dyes generate huge amount of pollutions among many types of pigments. In general, the electrochemical treatments, separating colors and organic materials by oxidation and reduction on electrode surfaces, are regarded as simpler and faster processes for removal of pollutants compared to other wastewater treatments. In this paper the electrochemical degradation characteristics of dye wastewater containing CI Direct Blue 15 were analyzed. The experiments were performed with various anode materials, such as RuO₂/Ti, PtO₂/Ti, IrO₂/Ti and graphite, with stainless steel for cathode. The optimal anode material was located by changing operating conditions like electrolyte concentration, current density, reaction temperature and initial pH. The degradation efficiency of dye wastewater increased in proportion to the electrolyte concentration and the current density for all anode materials, while the temperature effect was dependent on the kind. The performance orders of anode materials were RuO₂/Ti > PtO₂/Ti > IrO₂/Ti > graphite in acid condition and RuO₂/Ti > IrO₂/Ti > PtO₂/Ti > graphite in neutral and basic conditions. As a result, RuO₂/Ti demonstrated the best performance as an anode material for the electrochemical treatment of dye wastewater.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.