• 조명전기설비학회논문지
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• 제24권4호
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• pp.66-72
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• 2010

본 연구에서는 플렉시블 염료감응 태양전지(F-DSC)의 투명전도막으로서의 적용 가능성을 평가하기 위하여 PET 기판위에 AZO 박막을 증착하였다. 또한 ITO와 AZO 박막을 이용하여 동일한 조건하에서 F-DSC를 제작하여 광변환효율을 조사하였다. AZO의 경우 체적저항율 및 증착율은 220[W]의 전력조건하에서 각각 $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$와 25.5[nm/min] 정도였으며, 광투과율은 약 87[%]였다. AZO 박막의 전기전도 메카니즘의 방전전력 의존성은 XPS 분석결과 방전전력이 증가함에 따라 O1s/Zn2p의 성분비가 증가하여 산소성분에 의한 도너 제공에 크게 영향을 받는 것으로 나타났다. 한편, AZO 투명전도막으로 제작된 F-DSC의 변환효율은 약 2.79[%] 정도였으며, 이는 상용 ITO의 2.94[%]에 거의 필적되는 값으로 AZO의 F-DSC에의 응용 가능성이 충분함을 알 수 있었다.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.27-31
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• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.321-322
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• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.886-887
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• 2011

투명전극을 제작하기 위해서 SiOC 절연막 위에 AZO박막을 증착하였다. AZO 박막은 rf power가 5~200W인 RF 마그네트론 스퍼터 방법에 의해서 제작되었다. SiOC 박막은 산소와 DMDMOS 전구체의 유량비를 다르게 하여 플라즈마 발생 화학적 기상 증착방법으로 증착되었다. 증착된 SiOC박막은 UV visible spectroscopy에 의해서 분석하였다. 투명전극의 비저항은 rf 전력이 작을 수록 낮았으며, SiOC 절연막 위에 AZO를 증착시킨 후 반사률은 반대로 바뀌는 것을 확인하였다.

• 한국표면공학회지
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• 제39권1호
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.165-165
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• 2010

AZO:H films were prepared by RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a temperature of $150^{\circ}C$. The annealing treatments were carried out in hydrogen ambient for 1hr at a temperature of $400^{\circ}C$. The AZO:H films were etched with 1 % HCl. The influence of the properties of AZO:H films deposited in various working pressures is investigated. As a result, the AZO:H film deposited in 4mTorr showed excellent electrical property of $\rho=5.036{\times}10^{-4}{\Omega}cm$ and strongly oriented (002) peak. The transmittance in the wavelength of 450nm was above 80%. It can be used as front electrode for increasing efficiency of GaN LED.

• Journal of information and communication convergence engineering
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• 제9권4호
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• pp.461-465
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• 2011

An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.