• 제목/요약/키워드: AZ5214

검색결과 7건 처리시간 0.011초

355nm UV 레이저를 이용한 AZ5214와 SU-8 포토레지스트 어블레이션에 관한 연구 (A Study on the Ablation of AZ5214 and SU-8 Photoresist Processed by 355nm UV Laser)

  • 오재용;신보성;김호상
    • 한국레이저가공학회지
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    • 제10권2호
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    • pp.17-24
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    • 2007
  • We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

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$CF_{4}$ 기체를 이용한 $Ta_{0.5}Al_{0.5}$ 합금 박막의 플라즈마 식각 (Application of $CF_{4}$ plasma etching to $Ta_{0.5}Al_{0.5}$ alloy thin film)

  • 신승호;장재은;나경원;이우용;김성진;정용선;전형탁;오근호
    • 한국결정성장학회지
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    • 제9권1호
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    • pp.60-63
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    • 1999
  • Ta-Al 합금 박막의 건식식각에 대하여 조사하였다. $CF_{4}$ 기체를 이용한 반응성 이온 식각(Reactive Ion Etching, RIE)이 1:1 조성의 Ta-Al 합금 박막의 식각에 적용될 수 있음을 확인하였으며, 식각속도는 $67{\AA}/min$으로 측정되었다. 그리고 $CF_{4}$ 기체는 Ta-Al 합금 박막과 $SiO_{2}$ 층간에 선택성이 없다는 것이 확인되었으며, $SiO_{2}$ 층의 식각속도는 Ta-Al 박막의 경우보다 약 12배 빠른 $800{\AA}/min$으로 측정되었다. 그 외에 $CF_{4}$ 기체를 이용한 반응성 이온 식각에서는 Shiepley 1400-27 Photo Resist 보다 AZ 5214 Photo Resist가 더 안정적이라는 것이 조사되었다.

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APPLICATIN OF $CF_4$ PLASMA ETCHING TO $Ta_{0.5}Al_{0.5}$ ALLOY THIN FILM

  • Shin, Seung-Ho;Na, Kyung-Won;Kim, Seong-Jin;Chung, Yong-Sun;Auh, Keun-Ho
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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    • pp.85-90
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    • 1998
  • Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

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레이저 가열을 이용한 LCD 컬러 필터 프린팅 공정에 관한 연구 (A Study on LCD Color Filter Printing Process Using Localized Laser Heating)

  • 나성준;이재학;유중돈
    • 한국레이저가공학회지
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    • 제10권2호
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    • pp.5-15
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    • 2007
  • A new printing process for LCD color filter is proposed in this work by using the localized laser heating, which is called laser-induced spray printing (LISP) process. The LISP is a non-contact process, which injects the ink from the donor substrate to the glass substrate by the bubble pressure induced by laser heating. The temperature distribution of the donor substrate is calculated numerically to explain the ink ejection phenomena. The composition of the ink was includes the red pigment, n-butanol, xylene, BCA and epoxy. Experiments were conducted by using the fiber laser system, and the color filter patterns were deposited successfully under the proper laser heating conditions.

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표면 미세 가공 기술을 이용한 상하운동 및 회전운동을 하는 광 변조기에 관한 연구 (A STUDY ON THE SPATIAL LIGHT MODULATOR WITH PISTON PLUS TILT MODE OPERATION USING SURFACE MICROMACHINING TECHNOLOGY)

  • 정석환;김용권
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권2호
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    • pp.140-148
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    • 2000
  • In this paper, using surface micromachining technology with thick photoresist and aluminum, an SLM(Spatial Light Modulator), which is applied to the fields of adaptive optics and pattern recognition system, was fabricated and the electromechanical properties of the fabricated micro SLM are measured. In order to maximize fill-factor and remove mechanical coupling between micro SLM actuators, the micro SLM is composed of three aluminum layers so that spring structure and upper electrode are placed beneath the mirror plate, and $10\times10$ each mirror plate is individually actuated. Also, the micro SLM was designed to be able to modulate phase and amplitude of incoming light in order to have a continuity of phase modulation of incoming light. In the case of amplitude and phase modulation, maximum vertical displacement is 4$\mum$, and maximum angular displacement is $\pm4.6^{\corc}$ respectively. The height difference of the fabricated mirror plate was able to be reduced to 1100A with mirror plate planarization method using negative photoresist(AZ5214). The electromechanical properties of the fabricated micro SLM were measured with the optical measurement system using He-Ne laser and PSD(position sensitive device).

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Fabrication of sub-micron sized organic field effect transistors

  • 박성찬;허정환;김규태;하정숙
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.84-84
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    • 2010
  • In this study, we report on the novel lithographic patterning method to fabricate organic-semiconductor devices based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries (MIMIC) and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (~30nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce the atomic layer deposition of $Al_2O_3$ film on pentacene as a passivation layer. $Al_2O_3$ passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated sub-micron sized pentacene FETs and measured their electrical characteristics.

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마이크로미터 크기의 유기 전계 효과 트랜지스터 제작 (Fabrication of Micron-sized Organic Field Effect Transistors)

  • 박성찬;허정환;김규태;하정숙
    • 한국진공학회지
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    • 제20권1호
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    • pp.63-69
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    • 2011
  • 본 연구에서는 기존 실리콘 반도체 기술 기반의 포토 및 이빔 리소그래피 공정을 통하여 유기 반도체 소자를 패터닝하였다. P3HT나 PEDOT 등의 유기 반도체는 용매에 녹기 때문에 MIMIC (micro-molding in capillaries)이나 inkjet printing 기술을 이용하여 마이크로미터 크기의 소자 제작이 가능하였으나, 펜타신은 용매에 녹지 않기 때문에 매우 복잡한 방법으로 마이크로미터 크기의 소자를 제작하여왔다. 그러나, 본 연구에서는 원자층 증착 방법으로 증착한 산화 알루미늄막을 펜타신의 보호층으로 이용하여 기존의 포토 및 이빔 리소그래피 방법으로 마이크로미터크기의 펜타신 소자를 제작하였으며 그 전기 특성을 확인하였다.