• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1280-1282
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• 1994

The method of passivation for protecting the $Hg_{l-x}Cd_xTe$ surface is important device fabrication process, because the surface components are highly reactive leading to its chemical and electrical instability. Especially, the material of which composition is x=0.2 or 0.3, is narrow bandgap semiconductor and used as detector of infrared radiation. The device performance of narrow bandgap semiconductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{l-x}Cd_xTe$ allows rigorous control of the surface chemistry and provides an in-situ monitor of surface reaction. So electro-chemical reduction at specific potential can selectively eliminate the undesirable species on the surface and manipulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality or chemically treated $Hg_{l-x}Cd_xTe$ good surface.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.790-802
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• 2022

Large-scale reactor simulation often requires the use of Monte Carlo calculation techniques to estimate important reactor parameters. One drawback of these Monte Carlo calculation techniques is they inevitably result in some uncertainty in calculated quantities. The present study includes parametric uncertainty quantification (UQ) and sensitivity analysis (SA) on the Advanced Test Reactor Critical (ATRC) facility housed at Idaho National Laboratory (INL) and addresses some complications due to Monte Carlo uncertainty when performing these analyses. This approach for UQ/SA includes consideration of Monte Carlo code uncertainty in computed sensitivities, consideration of uncertainty from directly measured parameters and a comparison of results obtained from brute-force Monte Carlo UQ versus UQ obtained from a surrogate model. These methodologies are applied to the uncertainty and sensitivity of k_eff for two sets of uncertain parameters involving fuel plate geometry and fuel plate composition. Results indicate that the less computationally-expensive method for uncertainty quantification involving a linear surrogate model provides accurate estimations for k_eff uncertainty and the Monte Carlo uncertainty in calculated k_eff values can have a large effect on computed linear model parameters for parameters with low influence on k_eff.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.813-815
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• 1992

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.