• Applied Science and Convergence Technology
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• 제24권4호
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• pp.84-89
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• 2015

The base pressure and outgassing rate of a mild steel chamber were measured and compared to those of a stainless steel chamber. A combined sputter-ion and non-evaporable getter pump with a nominal pumping speed of 490 l/s generated the base pressure of $2.7{\times}10^{-11}$ mbar in the mild steel chamber and $1.2{\times}10^{-10}$ mbar in the stainless steel chamber. The rate-of-rise measurements show that the mild steel has an extremely low outgassing rate of $2.6{\times}10^{-13}$ mbar $ls^{-1}cm^{-2}$, which is about one-order of magnitude smaller than the outgassing rate of the stainless steels. Vacuum annealing of the mild steel at $850^{\circ}C$ reduced the outgassing rate further to $8.8{\times}10^{-14}$ mbar $ls^{-1}cm^{-2}$, which was comparable to the outgassing rate of a heat treated stainless steel for extreme-high vacuum use.

• Applied Science and Convergence Technology
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• 제24권4호
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• pp.77-83
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• 2015

Many welding processes are performed to construct cryogenic system. Leak-tight for the cryogenic system is required at low temperature environment. Helium leak detection techniques are commonly used to find leak for the cryogenic system. The helium leak detection techniques for spraying, sniffing and pressurizing techniques are introduced. High vacuum is also necessary to use helium leak detector. So, types of fluid flow, effective temperature, conductance and pumping speed are introduced for vacuum pumping. Leak test procedure is shown for pipe welding, cryomodule and low temperature test. Cryogenic seals which include copper gasket, helicoflex gasket and indium are investigated.

• Applied Science and Convergence Technology
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• 제24권1호
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• pp.16-21
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• 2015

The characteristics of an atmospheric pressure plasma jet (APPJ) in He discharge are measured with electrical and optical diagnostics methods. The discharge phenomenon in one cycle of the APPJ was diagnosed using intensified charge coupled device (ICCD) imaging. The gate mode images show that the propagation of plasma bullets happens only when the applied voltage on the inner conductor is positive. Moreover, the Schlieren image of the plasma jet shows that the laminar flow is changed into a turbulent flow when the plasma jet is turned on, especially when the gas flow rate increases.

• Applied Science and Convergence Technology
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• 제24권1호
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• pp.1-8
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• 2015

Protein immobilization on a gold surface plays an important role in the usefulness of biosensors that utilize gold-coated surfaces such as surface plasmon resonance (SPR), quartz crystal microbalance (QCM), etc. For developing high performance biosensors, it is necessarily required that immobilized proteins must remain biologically active. Loss of protein activity and maintenance of its stability on transducer surfaces is directly associated with the choice of immobilization methods, affecting protein-protein interactions. During the past decade, a variety of strategies have been extensively developed for the effective immobilization of proteins in terms of the orientation, density, and stability of immobilized proteins on analytical devices operating on different principles. In this review, recent advances and novel strategies in protein immobilization technologies developed for biosensors are briefly discussed, thereby providing an useful information for the selection of appropriate immobilization approach.

• Applied Science and Convergence Technology
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• 제24권1호
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• pp.9-15
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• 2015

The practical pumping speed of a dry pump is considerably lower than the intrinsic speed because of back-streaming through finite gaps of the rotor assembly. The maximum compression ratio and the ultimate pressure of the pump are also directly influenced by the back-streaming rate. Therefore, information on the gap conductance, which determines the back-streaming characteristics of the rotor assembly, is the most important key for estimating the pumping performance of a dry pump. In this paper, the feasibility of calculating analytically the pumping performance of a multi-stage Roots pump, one of the most popular types of dry pumps, by quantifying the gap conductance in a rational way, is discussed.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.67-72
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• 2016

This article describes an electrical network analysis (ENA) method to calculate the pressure distribution of a vacuum system in a molecular flow regime. The vacuum system was modeled using electrical components. For an accurate analysis, a complexly combined pipe model, excluding entrance conductance, was employed and the pressure distribution was simulated using ENA. A vacuum system comprising three vacuum pumps was used for simplicity. In addition, the ENA results were compared with results from finite element analysis (FEA) and experimental measurements. The pressure distribution profiles estimated from ENA, performed using the LTSpice IV software, were in agreement with FEA and experimental results.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.60-66
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• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.50-51
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• 2017

Strongly correlated electron systems which induce strong electron-electron interaction at ultra-low temperatures have always been an intriguing topic in mesoscopic condensed matter physics. Below 130 mK, a peculiar gap can be found in Al/$SiO_2$/Si:P structured tunnelling devices. The gap survives at the base temperature of more than 1800 gauss (30 mK), contrary to the superconductivity of the top Al electrode, which is completely suppressed above 100 gauss. This outcome implies that the observed gap is induced by Coulomb interaction in the heavily doped Si.