• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.29-32
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• 2005

Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.150-154
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• 2000

We investigated the quantum well intermixing (QWI) of a compressively strained InGaAs/InGaAsP multiple quantum well (MQW) by using impurity free vacancy diffusion technique. The samples with InGaAs/$SiO_2$ capping layer showed a higher degree of intermixing compared to that of InP/$SiO_2$ capping layer after rapid thermal annealing (RTA). Band-gap shift difference as large as 123 meV (195 nm) was observed between samples capped with InGaAs/$SiO_2$ and with InP/$SiO_2$ layer at RTA temperature of $700^{\circ}C$. Using the InGaAs/$SiO_2$ cap layer, the band-gap wavelength of MQW was changed by the intermixing from 1.55 $\mu\textrm{m}$ band to 1.3 $\mu\textrm{m}$ band with a wavelength shift of a 237 nm. The transform from MQW structure to homogenous alloy was observed above the RTA temperature of $700^{\circ}C$.

• Advances in materials Research
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• v.1 no.2
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• pp.161-168
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• 2012

Nanoflake composite multi core-shell $SrFe_{12}O_{19}/Fe_3O_4$/PEG/Polypyrrole was synthesized by in situ polymerization method. In this paper, the fabrication of $SrFe_{12}O_{19}$ nanoflake is as first core by solgel method. Then fabricated a shell layer from magnetic nanoparticles of $Fe_3O_4$, which synthesized by coprecipitation technique, onto the $SrFe_{12}O_{19}$ nanoflake. Polyethylene glycol (PEG) as a polymer layer and as second shell was coated onto the before core-shell. Than core-shell $SrFe_{12}O_{19}/Fe_3O_4$/PEG was used as template for the preparation of $SrFe_{12}O_{19}/Fe_3O_4$/PEG/Polypyrrole composite. Final composite has a conductive property among $4.23{\times}10^{-2}Scm^{-1}$ and magnetic property about $M_s$=2.99 emu/g. Also final composite in soluble at organic solvent such as DMF and DMSO and has a flake structure. Conductivity and magnetic property respectively determine by four-probe instrument and vibrant sample magnetometer (VSM), morphology and article size determined by FE-SEM, TEM and XRD.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.7-10
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• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.928-934
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• 1996

Quantitative analysis each portland cement components was conducted by standard calibration method using X-ray fluorescence spectrometer. Standard sample and the unknown sample were prepared by fused cast bead method. In checking the errors of standard cement 227A372 the relative errors of constituents such as CaO, SiO2, Al2O3, Fe2O3, MgO and SrO were less than 1% and the relative errors of constituents such as So3, K2O, TiO2, Na2O P2O5, and Mn2O3 were less than 5% Sample preparation was mainly contributed to the errors. Compared with general wet chemical method the results of X-ray fluorescence analyses were more precise and accurate. Moreover it is possible to analyze precisely a little amount of the constituents such as SrO, Mn2O3 and P2O5 the analyses of which were very difficult using the wet chemical method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.762-767
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• 2017

Mullite ($3Al_2O_3{\cdot}2SiO_2$) has emerged as a promising candidate for high-temperature structural materials due to its erosion resistance, chemical and thermal stabilities, relatively low thermal expansion coefficient, excellent thermal shock and creep resistances, and low dielectric constant. However, since the pure mullite sintering temperature is as high as $1,600{\sim}1,700^{\circ}C$, there is an increasing need for a sintering additive capable of improving the strength characteristics while lowering the sintering temperature. Herein we have tried to obtain the optimal sintering additive composition by adding MgO, $Cr_2O_3$, and $Y_2O_3$ to mullite, followed by sintering at $1,325{\sim}1,550^{\circ}C$ for 2 h. With additives of 2 wt% of MgO, 2 wt% of $Cr_2O_3$, 4 wt% of $Y_2O_3$, A density of $3.23g/cm^3$ was obtained for the sintered body at $1,350^{\circ}C$ upon using 2 wt% MgO, 2 wt% $Cr_2O_3$, and 4 wt% $Y_2O_3$ as additives. The three-point flexural strength of that was 275 MPa and the coefficient of thermal expansion (CTE) was $4.15ppm/^{\circ}C$.

• Culinary science and hospitality research
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• v.23 no.7
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• pp.97-111
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• 2017

As a single-person household emerges as an important consumer group, an Online-to-Offline or Offlineto-Online(O2O) service market is rapidly growing. This study attempted to verify the effects of convenience and webrooming characteristics of O2O service using the Technology Acceptance Model (TAM). The purpose of this study was to investigate the effects of the convenience and webrooming of food O2O service on users' perceived ease of use and perceived usefulness, and the effects of perceived ease of use and perceived usefulness on purchase intention of O2O services. Using a convenience sampling technique, an online survey was conducted through Google survey from April 16 to April 30, 2017 and was distributed to 447 O2O service users. A total of 320 questionnaires were included in the final analysis. The results showed that convenience had a significant effect on users' perceived ease of use as well as perceived usefulness. In addition, users' perceived ease of use had a significant impact on users' perceived usefulness. Finally, both perceived ease of use and perceived usefulness positively affected users' purchase intention of O2O services. These findings suggest that differentiated events, promotions, and store information should be provided when launching O2O service because webrooming is a more important factor in enhancing perceived usefulness than the perceived ease of use.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.263-266
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• 2000

This paper is focused on the fabrication of reliable Al/$TiO_2-SiO_2$/Mo antifuse, which could operate at low voltage along with the improvement in on/off state properties. Mo metal as the bottom electrode had smooth surface and high melting point, and was being kept as-deposited $SiO_2$film stable. The breakdown voltage of TiO_2-SiO_2$ stacked antifuse was better than that of same-thickness (100 $\AA$) $SiO_2$antifuse because of Ti diffusion in $SiO_2$. The improving breakdown-voltage and on-resistance can be obtained as well as the influence of hillock in the bottom metal is reduced by using double insulator. Low on-resistance (65 $\Omega$) and low programming voltage (9.0 V) can be obtained in these antifuses with 250 $\AA$ double insulator.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.54-54
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• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.