• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.2
• /
• pp.121-127
• /
• 2022

Micro-LED is a light-emitting diode smaller than 100 ㎛ in size. It attracts much attention due to its superior performance, such as resolution, brightness, etc., and is considered for various applications like flexible display and VR/AR. Micro-LED display requires a mass transfer process to move micro-LED chips from a LED wafer to a target substrate. In this study, we proposed a vacuum chuck method as a mass transfer technique. The vacuum chuck was fabricated with MEMS technology and PDMS micro-mold process. The spin-coating approach using a dam structure successfully controlled the PDMS mold's thickness. The vacuum test using solder balls instead of micro-LED confirmed the vacuum chuck method as a mass transfer technique.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.3
• /
• pp.109-115
• /
• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.10
• /
• pp.33-40
• /
• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• Journal of the Korean Ceramic Society
• /
• v.44 no.1 s.296
• /
• pp.32-36
• /
• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• Progress in Superconductivity
• /
• v.8 no.1
• /
• pp.59-64
• /
• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• Korean Journal of Materials Research
• /
• v.9 no.11
• /
• pp.1055-1061
• /
• 1999

Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure. substrate temperature. RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of IT0 films fabricated under the optimum deposition conditions (substrate temperature : $300^{\circ}C$. Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6$\times10^4$mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the IT0 films can be effectively used as the transparent shield material.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.12
• /
• pp.482-487
• /
• 2016

Ultra-violet rays are very harmful to eye health care. The blocking of ultra-violet rays and a reduction of optical reflection in the visible light range, which is to increase the share of transmitted light, and avoid the formation of ghost images in imaging, are important for the applications of polymer eyeglasses lenses. In this study, the high-refractive index polymer lenses, n=1.67, were fabricated by injection-molded method with the xylene diisocyanate monomer, 2,3-bis-1-propanethiol monomer, and benzotriazol UV absorber (SEESORB 709) mixture. To reduce the reflection of the polymer lens surfaces, multi-layer anti-reflection (AR) coatings were coated for both sides of the polymer lens using an E-beam evaporation system. The optical properties of the UV blocking polymer lens were characterized using a UV-visible spectrometer. The material properties of the thin films, which were composed AR coating layers, refractive index, and surface roughness, were analyzed by ellipsometry and atomic force microscopy. As a result, the fabricated polymer lens perfectly blocked ultra-violet rays below 395 nm with a blocking rate greater than 99%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.116-117
• /
• 2006

We investigated selective emitter effect of Porous Silicon (PSI) as antireflection coatings (ARC). The thin PSi layer, less than 100nm, was electrochemically formed by electrochemical method in about $3{\mu}m$ thick $n^+$ emitter on single crystalline silicon wafer (sc-Si). The appropriate PSi formations for selective emitter effect were carried out a two steps. A first set of samples allowed to be etched after metal-contact processing and a second one to evaporate Ag front-side metallization on PSi layer, by evaluating the I-V features The PSi has reflectance less than 20% in wavelength for 450-1000nm and porosity is about 60%. The cell made after front-contact has improved cell efficiency of about in comparison with the one made after PSi. The observed increase of efficiency for samples with PSi coating could be explained not only by the reduction of the reflection loss and surface recombination but also by the increased short-circuit current (Isc) within selective emitter. The assumption was confirmed by numerical modeling. The obtained results point out that it would be possible to prepare a solar cell over 15% efficiency by the proposed simple technology.

• Journal of the Korean Society for Precision Engineering
• /
• v.17 no.11
• /
• pp.191-198
• /
• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.6
• /
• pp.260-262
• /
• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\mu}m$ thickness on $p^+$ seeding layer. The cells with $p^+$ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is 12.95%, with $V_{oc}=633mV,\;J_{sc}=26.5mA/cm^2$, FF = 77.15%. The $p^+$ seeding layer of the cell is $20{\mu}m$ thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.