• The Journal of the Acoustical Society of Korea
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• v.15 no.2E
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• pp.4-7
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• 1996

In this paper, we propose a formula to compute the exact autocorrelations of the autoregressive (AR) process. For an arbitrary value of N, we first review the Yule-Walker equation and some basic properties of the AR model. We then modify the Yule-Walker equation to construct a new system of N+1 linear equations that can be used to solve for the N+1 autocorrelation coefficients for lags 0, 1, …, N, provided that the AR parameters of order N and the power of the white noise of the AR process are given.

• The Korean Journal of Applied Statistics
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• v.16 no.1
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• pp.141-150
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• 2003

This paper presents the multiple testing method of an autoregressive parameter in stationary AR(1) model using the usual Bayes factor. As prior distributions of parameters in each model, uniform prior and noninformative improper priors are assumed. Posterior probabilities through the usual Bayes factors are used for the model selection. Finally, to check whether these theoretical results are correct, simulated data and real data are analyzed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.96-99
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• 2003

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6$-Ar mixtures have described. The transport coefficients for electrons in (0.1[%])$SF_6$-Ar, (0.5[%])$SF_6$-Ar, (1.0[%])$SF_6$-Ar, (3.0[%])$SF_6$-Ar and (5.0[%])$SF_6$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.26-29
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thin films were etched at high-density C1$_2$/CF$_{4}$/Ar in inductively coupled plasma system. The etching of SBT thin films in C1$_2$/CF$_{4}$/Ar were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in Cl$_2$(20)/CF$_4$(20)/Ar(80). As f power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass spectrometry.y.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2202-2204
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• 2005

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6-Ar$ mixtures have described. The transport coefficients for electrons in (0.1[%]) $SF_6-Ar$, (0.5[%])$SF_6-Ar$,(1.0[%])$SF_6-Ar$,(3.0[%])$SF_6-Ar$ and(5.0[%]) $SF_6-Ar$ mixtures were measured by time-of- flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1494-1495
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• 2007

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6$-Ar mixtures have described. The transport coefficients for electrons in (0.1[%])$SF_6$-Ar, (0.5[%])$SF_6$-Ar, (1.0[%])$SF_6$-Ar, (3.0[%])$SF_6$-Ar and (5.0[%])$SF_6$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Analytical Science and Technology
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• v.15 no.6
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• pp.540-549
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• 2002

The arrangement of encapsulated Ar atoms in the molecular-dimensioned cavities of fully dehydrated zeolite A of unit-cell composition $Cs_3Na_8HSi_{12}Al_{12}O_{48}$ ($Cs_3$-A) has been studied crystallographically to probe the confinement effect of guest species in microporous environment. Atoms of Ar were encapsulated in the cavities of $Cs_3$-A by treatment with 410 atm of Ar at $400^{\circ}C$ for two days, followed by cooling at room temperature. The crystal structure of $Cs_3Na_8H$-A(4Ar) ($P_e$ = 410 atm, $a=12.245(2){\AA}$, $R_1=0.0543$, and $R_2=0.0552$) has been determined by single crystal X-ray diffraction technique in the cubic space group $Pm\bar{3}m$ at 21 (1) $^{\circ}C$ and 1 atm. Encapsulated Ar atoms are distributed in three crystallographic distinct positions: 1.5 Ar atoms per unit cell opposite 6-rings, 1.5 opposite four-rings in the large cavity, and finally 1.0 in the sodalite-unit. The possible structures of argon clusters, such as $Ar_2$, $Ar_3$, and $Ar_4$, are proposed.

• Journal of the Korean Statistical Society
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• v.27 no.3
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• pp.349-358
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• 1998

Consider the AR(1) model $X_{t}$=$\beta$ $X_{t-1}$+$\varepsilon$$_{t}$ where $\beta$ < 1 is an unknown parameter to be estimated and {$\varepsilon$$_{t}$} denotes the independent and identically distributed error terms with unknown common distribution function F. In this paper, a strong representation for the least absolute deviation (LAD) estimate of $\beta$ in AR(1) models is obtained under some mild conditions on F. on F.F.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2001.11a
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• pp.187-191
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• 2001

In this paper, the ac breakdown characteristics of Ar/$N_2$and Kr/$N_2$gas mixtures with gas pressure range of 58.8~137.3[kPa] under uniform and non-uniform fields were investigated. Summarizing the experimental results, the breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of pure $N_2$gas. In case of Ar(85%)/$N_2$(15%) and Ar(70%)/$N_2$(30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$(15%) and Kr(70%)/$N_2$(30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times.