• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• 한국전산유체공학회지
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• 제20권3호
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• pp.47-53
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• 2015

This study performed numerical simulation to elucidate the characteristics of flow past a rectangular cylinder with various values of the aspect ratio(AR) of the cylinder. We calculated the flow field, force coefficients and Strouhal number of vortex shedding depending on the Reynolds number(Re) and the aspect ratio. The $AR{\approx}1$ is preferred for drag reduction, and 0.375$AR{\approx}0$ is recommended if suppression of the lift-coefficient fluctuation and the shedding frequency is desirable. Furthermore the criticality of the Hopf bifurcation is also reported for each AR.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.309-311
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• 2003

The effects of etch parameters on dry etching of BLT thin films were investigated with ICP etch system in $Cl_2$/Ar and $BCl_2/Cl_2$/Ar gas. The etch rate and etch selectivity of BLT films were examined as a function of gas concentration, ICP power, bias power, and pressure. The maximum etch rates of 191.1 nm/min was obtained at the mixed etch condition of $BCl_3(20%)/Cl_2$/Ar, 700 W ICP RF power, 12 mTorr pressure and 400 W substrate RF power. As ICP power and rf power increased, the etch rate of BLT increased. As pressure increased, the etch rate of BLT decreased. The changes of radicals in both $Cl_2$/Ar and $BCl_3/Cl_2$/Ar plasma were measured with using optical emission spectroscopy (OES).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.22-26
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• 2008

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present simulation, we adopt capacitively coupled plasma with asymmetrical electrodes. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• 한국정보전자통신기술학회논문지
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• 제3권1호
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• pp.8-12
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• 2010

본 연구에서는 t-test와 ANOVA를 이용하여 근전도의 중앙주파수 추출을 위한 AR모델 차수결정 및 중앙주파수 비교에 관한 연구이다. 근전도의 근피로와 관계된 특징인자인 영교차율 및 저대역에너지, 중앙주파수를 추출하여 근피로에 이를 때까지의 변화를 평가해 봄으로써 근피로 정도나 시점까지의 변화 정도를 비교 및 고찰하였다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.381-385
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• 2005

The plasma temperature of Ar gas in hollow cathode discharge were measured. This is done by measuring the line profile of the 1s/sub 8/-2p/sub 8/ transition in Ar, using a single-frequency diode laser. Low power diode lasers have been successfully used for investigation of the line profiles of Ar transitions in hollow cathode discharges. It turns out that the plasma temperature of Ar is 640∼783 K in the discharge current range at 7∼10 mA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.243-246
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권1호
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• pp.20-23
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• 2004

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• 자연과학논문집
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• 제11권1호
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• pp.33-39
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• 1999

$Sm^3+$과 Alizarin red S(ARS)가 반응하여 생성한 착물의 전기화학적 성질을 직류폴라로그래피, 펄스차이폴라로그래피 및 순환전압전류법으로 연구하였다. $Sm^3+$과 ARS는 1 : 3 착물을 형성하였다. 0.1M LiCl 지지전해질 용액에서 착물의 환원파는 확산지배적이며 흡착성 착물파임을 확인하였다. 착물파의 환원전위는 ARS의 환원전위보다 음전위에서 나타났으며 $Sm^3+$의 농도를 증가시키면 ARS의 봉우리전류($P_1$)는 감소하고 착물의 봉우리 전류($P_2$)는 증가하였다. ARS의 농도 $2{\times}$$10^-4$ M에서 $Sm^3+$의 농도 $2{\times}$$10^-6$ M~$3.2{\times}$$10^{-5}$ M 범위에서 직선적으로 변하였다.

• 한국대기환경학회지
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• 제4권2호
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• pp.1-10
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• 1988

Brookhaven 의학연구용 원자로에서 방출되는 기체분출물에 관하여 연구 되었다. 모든 기체시료는 $\gamma$-선 분광계측에 의하여 분석되었다. 시료 중에 존재하는 것으로 확인된 핵종으로서, $^{82}Cl(T_{1/2}$ = 35.30 시간) 이 가장 뚜렷하였다. 그 외의 확인된 핵종은 $^{38}Cl(T_{1/2}$ = 37.24분), $^{41}Ar(T_{1/2}$ = 1.82시간), $^{106}Rh(T_{1/2}$ = 29.80묘), $^{133}Te(T_{1/2}$ = 12.45분)이었다. 3MW 원자로 출력에서 pre-filter bank를 통과한 기체분출물 중에서 $$^{41}Ar$의 농도는 2.436Bq/cc로 계산됨으로써 $^{41}Ar$의 방사능 방출율은 8.51 ${\times}10^9$Bq/MW - h로 산정되었다. filter bank의 방사능 원거효율(%)은 $^{38}Cl$의 경우 97.84%, $^{41}Ar$은 14.15%, ^{82}Br$은 98.70% 그리고 $^{106}Rh$은 98.81% 각각 산정되었다. 한편, charcoal trap과 millipore filter 에서 확인된 기타 핵종들로서 $^{24}Na$, $^{72}Ga$, $^{92}Sr$, $^{97}Zr$, $^{132}I$, $^{133}Te$, $^{141}Ce$, $^{153}Sm$과 $^{154}Pm$은 filter bank에 의해서 완전히 제거되었다.