• Membrane Journal
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• v.13 no.2
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• pp.73-80
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• 2003

Abstract: The surfaces of poly (methylpentene)(PMP) were modified by Af and $NH_3$ plasma treatment, and their effects on permeation characteristics were investigated. The mole ratio of O/C in the surface was increased with Ar plasma treatment and consequently the surface became hydrophilic because of the possible formation of -OH, -COOH and C=O. The surface treated by $NH_3$ plasma also became hydrophilic due to the formation of amine and/or amide groups. The $CO_2$ permeability and its actual selectivity over N_2$ were 182 baller and 6.17 for the optimum condition of Ar-30W-6min, while 144 Baller and 6.13 for that of $NH_3$-30 W-8 min.

• Current Optics and Photonics
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• v.6 no.2
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• pp.143-150
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• 2022

Anti-resonant hollow-core photonic crystal fiber (AR-HCF) has unique advantages, such as low nonlinearity and high damage threshold, which make it a promising candidate for high-power laser delivery at distances of tens of meters. However, due to the special structure, optical properties such as mode-field profile and bending loss of hollow-core fibers are different from those of solid-core fibers. These differences have limited the widespread use of AR-HCF in practice. In this paper we conduct numerical analysis of AR-HCFs with different structural parameters, to analyze their influences on an AR-HCF's optical properties. The simulation results show that with a 23-㎛ air-core diameter, the fundamental mode profile of an AR-HCF can well match that of the widely used Nufern's 20/400 fiber, for nearly-single-mode power delivery applications. Moreover, with the ratio of cladding capillary diameter to air-core diameter ranging from 0.6 to 0.7, the AR-HCF shows excellent optical characteristics, including low bending sensitivity while maintaining single-mode transmission at the same time. We believe these results lay the foundation for the application of AR-HCFs in the power delivery of high power fiber laser systems.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Nuclear Engineering and Technology
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• v.53 no.6
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• pp.2011-2018
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• 2021

Nowadays, evaluation of amounts and distributions of radioactive waste is an important preparatory step in the process of nuclear reactor decommissioning. For tentative estimation of radioactive waste, a cell-based rigorous 2 step (R2S) method usually is used; however, a poor resolution caused by the averaged flux and spectrum in a cell is still a great challenge because of leading to underestimated or overestimated results. To overcome the poor resolution, several systems were introduced. Neither system, however, provides any function for evaluation of radioactive waste amount and distribution. Thus, it is additionally required to classify radioactive waste based on the results of activation calculation. In this study, the advanced R2S (AR2S) system was developed. To verify the performance of the system, its results for a verification problem were compared with those of the cell-based R2S method. The results showed good agreement, which is to say, within 2.0% relative error. Also, several characteristics of fine/coarse mesh were analyzed. To demonstrate the performance of the AR2S system, the radioactive waste from the Japan Power Demonstration Reactor (JPDR) was estimated, and the result indicated a high-resolution distribution. Therefore, it is expected that the AR2S system will prove useful for precise evaluation of radioactive waste.

• The Journal of the Korea Contents Association
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• v.13 no.5
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• pp.48-57
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• 2013

Smartphones provide users with environment for communication and sharing information and at the same time play an important role of mobile technology and mobile art development. Smartphone technology-related researches are being accelerated especially with the advent of mobile Augmented Reality(AR) age, but the studies on user participation that is essential for AR content industry were insufficient. In that regard, the assistance from mobile art area that has already developed these characteristics is essential. Thus, this article is to classify mobile art that has not been studied a lot domestically into feature phone usage and smartphone usage and to analyze each example case with the three most used methods. The usage of feature phones which use the sound and images of mobile devices can be divided into three: installation and performing methods, single channel video art method and five senses communication method. On the other hand, the usage of smartphones that use sensors, cameras, GPS and AR can be divided into location-based AR, marker-based AR and markerless AR. Also, as a result of examining mobile AR content utilization technology by industries, combined methods are utilized; tourism and game-related industries use location-based AR, education and medicine-related industries use marker-based AR, and shopping-related industries use markerless AR. The development of AR content industry is expected to be accelerated with mobile art that makes use of combined technology method and constant communication method through active participation of users. The future development direction of mobile AR industry is predicted to have minimized HMD, integration of hologram technology and artificial intelligence and make the most of big data and social network so that we could overcome the technological limitation of AR.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.85-87
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• 2000

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrodes in display devices have been investigated. The etch characteristics of ITO as a function of $Ar/CH_4$ gas mixtures were analyzed using QMS(quadrupole mass spectrometry), OES(optical emission spectroscopy), and ESP(electrostatic probe). ITO etch rates were increased with the addition of moderate amount of $CH_4$ to Ar due to the increased chemical reaction between $CH_3$ or H and ITO in addition to the physical sputtering of ITO by Ar ion bombardment. However, the addition of excess amount of $CH_4$ decreased the ITO etch rates possibly due to the increased polymer formation on the ITO surface. Also, the measurement data obtained by QMS and OES suggested that $CH_3$ radicals are more activity involved in the etching of ITO compared to H radicals.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.622-627
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• 1994

Conducting solid samples are successfully analyzed with the spark ablation combined to the moderate power (500W) Helium Microwave Induced Plasma (He MIP). The relative standard deviations are in the range of 3-10% and the detection limits are around 50 ${\mu}$g $g^-1$. These values are higher than those of Ar MIP or Ar Inductively Coupled Plasma. Spark ablated particles are examined to investigate the analytical characteristics of the system.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2001.05a
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• pp.158-162
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• 2001

SrS:Ce thin films for blue EL devices are prepared by Hot Wall Method and their crystallographic and optical characteristics are investigated by various methods. Deposition rates are decreased with substrate temperature, but increased with SrS cell temperature. The crystallographic characteristics are strongly affected by deposition rates. The peak of photoluminescence are found ar 470 and 540nm.

• The Journal of the Convergence on Culture Technology
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• v.5 no.4
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• pp.315-320
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• 2019

In the era of the fourth industrial revolution, the education industry is expected to grow further. It is expected that growth rate of future education using VR/AR technology will be very high. Realistic contents based on VR/AR technology provides high realism and experience through characteristics of immersion, interaction and intelligence. This paper tries to analyze the trends of realistic contents technology at home and abroad, and to come up with measures that can be applied to future educational content through case analysis of realistic contents development.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.