• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• 한국자기학회지
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• 제15권2호
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1496-1498
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• 2003

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.718-721
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• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• 한국해양공학회지
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• 제31권2호
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• pp.164-169
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• 2017

Studies were performed on an ARS using SDINS's RLG and the geomatic sensor. To develop the ARS, experiments were performed to determine the characteristics of the RLG and geomatic sensor. Based on the results, to reduce the angular position errors of the RLG, which accumulate from the angular velocity data, an algorithm was studied that uses the Extended Kalman filter (EKF) to compensate the RLG data and geomatic sensor data. To verify the performance of the developed algorithm for reducing the cumulative angular errors, experiments that included the developed EKF were performed. Through these, it was shown that a drastic reduction in the angular errors of the RLG were achieved.

• 한국수소및신에너지학회논문집
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• 제26권5호
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• pp.402-408
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• 2015

In D-T fusion reaction, $D_2$ (duterium) and $T_2$(tritium) are used as fuel gas. The exhaust gas of nuclear fusion includes hydrogen isotopes $Q_2$ (Q means H, D or T), tritiated components ($CQ_4$ and $Q_2O$), CO, $CO_2$, etc. All of hydrogen isotopes should be recovered before released to the atmosphere. This study focused on the recovery of hydrogen isotopes from $CQ_4$ and $Q_2O$. Two kinds of experiments were conducted to investigate the catalytic reaction characteristics of SMR (Steam Methane Reforming) and WGS (Water Gas Shift) reactions using Pt catalyst. First test was performed to convert $CH_4$ into $H_2$ using 6% $CH_4$, 6% CO/Ar feed gas. In the other test, 100% CO gas was used to convert $H_2O$ into $H_2$ at various reaction conditions (reaction temperature, S/C ratio, GHSV). As a result of the first test, $CH_4$ and CO conversion were 41.6%, 57.8% respectively at $600^{\circ}C$, S/C ratio 3, GHSV $2000hr^{-1}$. And CO conversion was 72% at $400^{\circ}C$, S/C ratio 0.95, GHSV $333hr^{-1}$ in the second test.

• 자원환경지질
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• 제19권2호
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• pp.97-107
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• 1986

이목화강암(梨木花崗岩)은 칼크-알카라인 subsolvus 몬조화강암(花崗岩)에 속(屬)하고 중립질(中粒質)이며, 석영(石英), 장석(長石), 흑운모(黑雲母) 및 각섬석(角閃石)으로 구성(構成)되어 있다. 본(本) 화강암(花崗岩)은 광물조성(鑛物組成) 및 지화학적(地化學的) 특징(特徵)으로 보아 "I-type" 및 "magnetite-series"로 분류(分類)된다. 이목화강암(梨木花崗岩)의 친(親)마그마가 주위 모암(母岩)인 조선누층군(朝鮮累層群)의 암석(岩石)(주(主)로 석회암(石灰岩))을 포획하여 동화(同化)시킴으로 마그마의 화학적(化學的) 특성(特性)이 일부(一部) 변(變)한 것으로 사료(思料)된다. 이목화강암(梨木花崗岩)은 함백분지(咸白盆地)주위의 구조적(構造的) 약선대(弱線帶)인 동서(東西) 및 남북방향(南北方向)이 교차(交叉)하는 단층면(斷層面)이나 단열대(斷裂帶)를 따라서 지각(地殼)의 천부(淺部)까지 관입(貫入)하고 있다. 이목화강암(梨木花崗岩)의 본원(本源)마그마는 해양지각(海洋地殼)의 subduction으로 인(因)한 상부(上部)맨틀의 부분용융(部分熔融)에 의(依)하여 형성(形成)되었다. 마그마의 분별결정작용(分別結晶作用)에 있어서는 장석(長石)의 분별작용(分別作用)에 의(依)해 화학적(化學的) 영향을 크게 받은 것으로 나타났다. 본(本) 화강암(花崗岩)에서 분리(分離)한 흑운모(黑雲母)를 대상(對象)으로 K-Ar년대측정(年代測定)을 실시(實施)한 결과(結果) $96.7{\pm}2.0Ma$로 밝혀졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 한국산학기술학회논문지
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• 제9권1호
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• pp.47-52
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• 2008

소자가 점점 고집적화 됨에 따라, MOS 소자 제조에 있어서 $SiO_2$의 두께가 ${\sim}1nm$로 낮아질 경우 발생하는 터널링전류와 문틱전압 천이를 방지할 수 있는 새로운 게이트용 유전물질을 개발하여 소자의 크기를 줄이는데 주력하고 있다. 본 실험에서는 원자층증착(ALD: atomic layer deposition) 방법으로 증착된 $ZrO_2$ 박막의 물리적, 전기적 특성에 대하여 연구하였다. ALD $ZrO_2$ 박막을 증착한 후 Ar 가스 분위기에서 $800^{\circ}C$, 1 시간동안 열처리한 다음 XRD, TEM, 그리고 C-V plots을 이용하여 $Pt/ZrO_2/Si$ 소자의 형태, 결정화 동역학, 그리고 경계층 특성을 평가한 결과 열처리에 의해 소자의 특성이 크게 향상됨을 알 수 있었다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.