• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.808-811
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• 2004

A full-color AMOLED display with an RGBW color filter pattern has been fabricated. Displays with this format require about $^1/_2$ the power of analogous RGB displays. RGBW and RGB 2.16inch diagonal displays with average power consumptions of 180 mW and 340 mW, respectively, are demonstrated for a set of standard digital still camera images at a luminance of 100 cd/$m^2$. In both cases, a white-emitting AMOLED is used as the light source. The higher efficiency of the RGBW format results because a large fraction of a typical image can be represented as white, and the white sub-pixel in an RGBW AMOLED display is highly efficient because of the absence of any color filter. RGBW and RGB AMOLED displays have the same color gamut and, aside from the power consumption difference, are indistinguishable.

• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.58-61
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• 2007

We present simulations and results to demonstrate the viability of stainless steel foil as a substrate for low power consumption, flexible AMOLED displays. Using organic planarization layers, we achieve very smooth surface properties, resulting in excellent TFT performance, that can be repetitively flexed without significantly affecting device performance. The use of phosphorescent OLEDs enables the design of low power consumption 40" AMOLED displays.

• Journal of the Optical Society of Korea
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• v.20 no.5
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• pp.586-592
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• 2016

This paper proposes a luminance compensation method using optical sensors to achieve high luminance uniformity of active matrix organic light-emitting diode (AMOLED) displays. The proposed method compensates for the non-uniformity of luminance by capturing the luminance of entire pixels and extracting the characteristic parameters. Data modulation using the extracted characteristic parameters is performed to improve luminance uniformity. In addition, memory size is optimized by selecting an optimal bit depth of the extracted characteristic parameters according to the trade-off between the required memory size and luminance uniformity. To verify the proposed compensation method with the optimized memory size, a 40-inch 1920×1080 AMOLED display with a target maximum luminance of 350 cd/m² is used. The proposed compensation method considering a 4σ range of luminance reduces luminance error from ± 38.64%, ± 36.32%, and ± 43.12% to ± 2.68%, ± 2.64%, and ± 2.76% for red, green, and blue colors, respectively. The optimal bit depth of each characteristic parameter is 6-bit and the total required memory size to achieve high luminance uniformity is 74.6 Mbits.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.749-752
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• 2004

Unlike OLEDs, there is no lifetime testing procedure for TFTs. In this work, we have defined such a procedure and developed a method for the accelerated stress testing of TFT pixel circuits in a-Si AMOLED displays. The acceleration factors derived are based on high current and temperature stress, and can be used to significantly reduce the testing time required to guarantee a 20000-hour display backplane lifespan.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1705-1708
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• 2006

Nanocrystalline silicon (nc-Si) based TFTs were developed using a conventional PECVD production system. Devices exhibit very interesting characteristics, in particular when using a bi-layer structure which reduces leakage current and improves subthreshold area. Good stability and low leakage current make these devices suitable for the fabrication of low-cost and high performance AMOLED displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1044-1045
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• 2005

Rapid progress has been achieved towards commercially viable full color polymer OLED devices. New full color polymer OLED displays which incorporate a novel hole injecting-transporting layer show high efficiency, low operating voltage and long lifetimes. The performance of a 14.1" WXGA a-Si based solution processed AMOLED full color display is described.

• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.27-29
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• 2008

Announcements by many companies have shown that market interest and technical potential exist for AMOLEDs. DuPont Displays is developing solution processing technology designed to address the high cost of manufacturing AMOLEDs via vapor deposition methods. By printing OLED displays, we can reduce costs and can subsequently scale OLED manufacturing to a competitive motherglass size.