• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1792-1795
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• 2007

We have proposed a new driving method which improve the current stability of a-Si:H TFTs for AMOLED. It performs the negative bias annealing on driving TFTs during a certain period of a frame time. In the proposed method, the range of data signals is significantly reduced by modulating VSS.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.517-520
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• 2008

A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.481-484
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• 2008

In order to reduce IR drop through common electrode in AMOLED, we propose a novel method to form electrical contact between highly-conductive bus lines and common electrode by using a plasma-assisted patterning of OLED layers and double deposition of the common electrode. Plasma-assisted patterning effects on OLED performance and degradation have been investigated. This patterning method caused turn-on voltage decrease, current flow increase at the same applied OLED voltages, quantum efficiency decrease, and rapid degradation at early stage during the lifetime test. However, comparable 70% luminance lifetime were obtained for both patterned and non-patterned OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.197-200
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• 2008

We propose a novel n-type a-Si:H TFT pixel circuit which is proper to AMOLED display for the large size and high resolution. Proposed pixel circuit will be suit to panel for the high resolution because of different threshold sampling method. Driving method of proposed pixel circuit is very simple like an AMLCD. Our simulation indicates that the proposed pixel circuit can compensate the Vth shift and IR rising of power line so that provide better quality image.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.127-130
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• 2008

A 2.2" QVGA($320{\times}240$) 262,114 color AMOLED module has been developed using digital driving methodology. In this paper, we discuss the development of diver IC which is applied to Digital AMOLED module. Technologies for low cost IC structure and image quality enhancement are presented.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1111-1114
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• 2006

We have developed a 2 inch LTPS-TFT AMOLED display with a top emission structure on a $50-{\mu}m-thick$ metal foil. The Active matrix back planes were fabricated with the p-channel LTPS TFT with a conventional pixel circuit consisting of 2 transistors and 1 capacitance. The p-channel TFTs on the metal foil exhibited the field-effect mobility of $22cm^2/Vs$. Finally, a images from prototype monochrome AMOLED displays are successfully presented, with $64{\times}88$ pixels and 56-ppi resolution.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1424-1427
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• 2005

In this paper, we studied on the application of Organic Thin Film Transistors (OTFTs) to the active matrix organic light emitting diodes (AMOLED). We designed organic transistor based pixel circuits for AMOLED. The pixel circuit is consisted of two-transistor, one-capacitor and one-OLED. We report the simulation results of the pixel circuits that OLED current varied as the data line and scan line voltage. Also, we will describe the fabrication process of the Pentacene OTFTs arrays and the organic light emitting diodes. The driving results of the fabricated unit pixels and their 4x4 arrays are also presented.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.793-796
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• 2005

A structure and a design of device were developed to fabricate large-scale active matrix organic light-emitting diode (AMOLED) display with good color purity and high aperture ratio. With these technologies, we developed a full color 14.1 inch WXGA AMOLED display. For the integration of OLED on an active matrix a-Si TFT backplane, an efficient top emission OLED is essential since the TFT circuitry covers a large position of the pixel aperture. These technologies will enable up the OLED applications to larger size displays such as desktop monitors and TVs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.668-672
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• 2005

Doosan DND, OLED manufacturing equipment maker, has developed the largest deposition system to produce $730{\times}920mm$ size AMOLED devices for the first time in the world. It is necessary for producing 40" AMOLED panels to develop the large-scaled vacuum technologies including ICP plasma, stretching glass chuck, organic deposition, metal deposition and hybrid encapsulation processes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.