• Korean Journal of Materials Research
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• v.18 no.10
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• pp.515-520
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• 2008

We fabricated 10 nm-$TiO_2$ thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of $150^{\circ}\;and\;250^{\circ}$. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the $TiO_2$ using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform $TiO_2$ thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric $TiO_2$ phase was formed and confirmed by measuring main characteristic peaks of Ti $2p^1$, Ti $2p^3$, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-$TiO_2$ thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional $TiO_2$ films had a band gap of 3.0 eV (rutile)${\sim}$3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick $TiO_2$ film using an ALD process at $150^{\circ}$ had almost the same properties as thsose of film at $250^{\circ}$. Therefore, we confirmed that the ALD-processed $TiO_2$ thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.61-66
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• 2022

This study is to increase the surface area and maximize the effect of the catalyst by coating a nanometersized metal catalyst material on the anode layer using atomic layer deposition (ALD) technology. ALD process is known to produce uniform films with well-controlled thickness at the atomic level on substrates. We measured the performance by coating metals (Ni) on Ni/YSZ, which is the most widely known anode material for solid oxide fuel cells. ALD coatings began to show a decrease in cell performance over 3 nm coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.312.1-312.1
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• 2016

We have deposited ZnO thin films by ultraviolet (UV) enhanced atomic layer deposition using diethylznic (DEZ) and water (H2O) as precursors with UV light. The atomic layer deposition relies on alternating dose of the precursor on the surface and subsequent chemisorption of the precursors with self-limiting growth mechanism. Though ALD is useful to deposition conformal and precise thin film, the surface reactions of the atomic layer deposition are not completed at low temperature in many cases. In this experiment, we focused on the effects of UV radiation during the ALD process on the properties of the inorganic thin films. The surface reactions were found to be complementary enough to yield uniform inorganic thin films and fully react between DEZ and H2O at the low temperature by using UV irradiation. The UV light was effective to obtain conductive ZnO film. And the stability of TFT with UV-enhanced ZnO was improved than ZnO by thermal ALD method. High conductive UV-enhanced ZnO film have the potential to applicability of the transparent electrode.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.21-21
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• 2014

$CrN/Al_2O_3/CrN$ 다층 코팅을 HIPIMS와 ALD간 하이브리드 코팅법을 통해 형성하였다. ALD를 통해 CrN 층에 도입한 $Al2O_3$층의 두께 및 위치가 $CrN/Al_2O_3/CrN$ 다층 코팅층의 미세구조, 표면 거칠기, 기계적 특성 및 화학적 특성에 미치는 영향에 대해 조사하였다. 전체 공정시간은 거의 변화시키지 않고도, ALD를 이용한 $Al2O_3$층의 삽입에 의하여 기계적/화학적 특성이 크게 개선될 수 있음을 확인하였으며, 개선된 특성에 대한 원인에 대해 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.543-545
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• 2009

With injection-type source delivery system of atomic layer deposition (ALD), bottom-contact and bottom-gate thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric for the first time. The properties of the ZnO TFT were greatly influenced by the device structure and the process conditions. The zinc oxide TFTs exhibited a channel mobility of 0.43 $cm^2$/Vs, a threshold voltage of 0.85 V, a subthreshold slope of 3.30 V/dec, and an on-to-off current ratio of above $10^6$ with solid saturation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.726-732
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• 2007

We fabricated UV absorption functional $10{\sim}50nm-TiO_{2-x}/quartz$ structures layer using ALD (atomic layer deposition) method. We deposited $10nm-TiO_{2-x}$ layer on quartz substrate using ALD, and film thickness was determined by an ellipsometer. The others specimen thickness was controlled by ALD time lineally. We characterized controlling phase UV and visible optical property using an X-ray difractometer, a UV-VIS-IR spectrometer and a digital camera. $ALD-TiO_{2-x}$ layers were non-stoichiometric $TiO_{2-x}$ form and amorphous phases comparing with bulk $TiO_2$. While the conventional bulk $TiO_2$ had band gap of $3.0{\sim}3.2eV$ resulting in absorption edges at 380 nm and 415 nm, $ALD-TiO_{2-x}$ layers showed absorption edges at 197 nm and 250 nm. Therefore, our nano-thick $ALD-TiO_{2-x}$ was able to absorb shorter UV region and showed excellent transmittance in visible region. Our result implies that our newly proposed nano-thick $TiO_{2-x}$ using ALD process may improve transmittance in visible rays and be able to absorb shorter UV light effectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.105-105
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• 2016

Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.