• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.120-126
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• 2005

We have proposed a characteristic method to estimate real composition when multi component oxide films are deposited by ALD. Final atomic concentration ratio was theoretically calculated from the film densities and growth rates for $HfO_2$ and $Al_2O_3$ using ALD processed HfxAhOz mms.W e have transformed initial source feeding ratio during deposition to fins] atomic ratio in $Hf_xAl_yO_z$ films through thickness factors ($R_{HFO_2}$ ami $R_{Al_2O_3}$) ami concentration factor(C) defined in our experiments. Initial source feeding ratio could be transformed into the thickness ratio by each thickness factor. Final atomic ratio was calculated from thickness ratio by concentration factor. It has been successfully confirmed that the predicted atomic ratio was in good agreement with the actual measured value by ICP-MS analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.282-282
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• 2013

The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.374-374
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• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.169-169
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• 2003

실리콘 절연막은 반도체 및 디스플레이 소자의 gate 절연막과 보호막으로, 그리고 배선공정에서는 층간절연막(ILD, Inter Layer Dielectric)으로 사용하는데, 주로 IPCVD, PECVD, APCVD법에 의하여 증착되고 있다. 그러나 이러한 방법들은 반도체 소자의 고집적화가 진행됨에 따라 증착온도와 step coverage 및 물성 이 문제점으로 대두되고 있다. 이러한 문제점들을 해결할 수 있는 원자층 증착(ALD, Atomic Layer Deposition)기술은 기판 표면에서의 self-limiting reaction을 통해 매우 얇은 박막을 형성할 수 있고, 두께 및 조성 제어를 정확히 할 수 있으며, 복잡한 형상의 기판에서도 우수한 step coverage를 얻을 수 있어 초미세패턴의 형성과 매우 얇은 두께에서 균일한 물리적, 전기적 특성이 요구되는 초미세 반도체 공정에 적합하다. 또 저온에서 증착이 가능해 유리를 기판으로 사용하는 TFT-LCD소자의 gate 절연막에 적용이 가능하다.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.200-202
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• 2009

Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor without any seed layer. The average growth rate of tin oxide film is about 1.2 A/cycle from $50{^{\circ}C}$ to $150{^{\circ}C}$. The rate decreases rapidly at a substrate temperature of $200{^{\circ}C}$. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Due to a thermal annealing effect, the surface roughness and the tin amount in the film composition are slightly increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.22.2-22.2
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• 2006

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.159-165
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• 2002

The physical properties of the TiN films deposited by ALD using $TiCl_4$and $NH_3$have been investigated. The TiN deposition rate is ~0.6 $\AA$ under an optimum deposition condition and the resistivity of the TiN films is 200~350 $\mu\Omega$cm . According to the XRD analysis results TiN films are crystallized in the ALD process window. AES analysis results show that the Cl impurity concentration in the TiN films is lower than 1 at% and that the atomic ratio of the TiN films is 1:1. Also it is found by SEM observation that the step coverage of the TiN films on which TiN films with trenches the aspect ratio of which is 10:1 is excellent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.342-342
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• 2007

원자층 증착(Atomic Layer Deposition: ALD) 방법은 반응물질들을 펄스형태로 챔버에 공급하여 기판 표면에 반응물질의 표면 포화반응에 의한 화학적 흡착과 탈착을 이용한 박막증착기술이다. ALD법은 박막의 조성 정밀제어가 쉽고, 파티클 발생이 없으며, 대면적의 박막 증착시 균일성이 우수하고, 박막 두께의 정밀 조절이 용이한 장점이 있다. 원자층 증착 공정에서 짧은 시간 안에 소스를 충분히 공급하기 위한 방법으로는 소스 온도를 증가시켜 전구체의 증기압을 높여 반응기로의 유입량을 증가시키는 방법, 전구체의 공급시간을 늘리는 방법 등을 들 수 있다. 그러나 전구체 온도를 상승시키는 경우, 공정 조건의 변화가 요구되며 전구체의 변질에 의하여 형성된 막이 의도하는 막 특성을 만족시키지 못하게 되는 문제점이 발생될 우려가 있다. 그리고 전구체를 충분히 공급하기 위하여 전구체의 공급시간을 늘이는 방법을 사용하면, 원하는 두께의 막을 형성하기 위하여 소요되는 공정시간이 증가된다. 이를 해결하기 위해 수송가스를 이용한 버블러 형태의 전구체 공급 장치를 사용하지만 이 또한 전구체의 수명을 단축시키는 단점을 가지고 있다. 본 논문에서는 위의 문제점을 극복할 수 있는 새로운 개념의 수송가스 도움 전구체 공급 장치를 소개한다. 본 연구에서 사용된 수송가스 도움 전구체 공급 장치를 가지는 ALD 장비는 Lucida-D200 (NCD Technology사)이며 기판으로는 8인치 실리콘 웨이퍼를 사용하였으며 (TEMA)Zr을 사용하여 ZrO2 박막을 성장하였다. 수송가스 도움 전구체 공급 장치를 사용한 경우, 그렇지 않은 경우 보다 $30^{\circ}C$ 이상 전구체 온도를 낮출 수 있으며, 또한 증착 속도를 약 2배정도 증가시킬 수 있었다. 이들 박막들은 XRD, XPS, AFM 등을 이용하여 결정구조, 결합에너지, 표면 거칠기 등의 특성을 관찰하였다. 그리고 C-V, I-V 측정을 이용해 정전용량, 유전율, 누설전류 등의 전기적 특성을 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.319.1-319.1
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• 2013

Solid oxide fuel cells (SOFCs) have been recognized as one of emerging renewable energy sources, due to minimized pollutant production and high efficiency in operation. The performance of SOFCs is largely dependent on the electrode polarization which involves the oxidation/reduction in cathodes and anodes along with the charge transport of ions and electronic carriers. Atomic layer deposition is based on the alternate chemical surface reaction occurring at low temperatures with high uniformity and superior step coverage. Such features can be extended into the coating of metal oxide and/or metal layer onto the porous materials. In particular, the atomic layer deposition is can manipulated in controlling the charge transport in terms of triple phase boundaries, in order to control artificially the electrochemical polarization in electrodes of SOFC. The current work applied atomic layer deposition of metal oxides intro the electrodes of SOFCs. The corresponding effect was monitored in terms of the electrochemical characterization. The roles of atomic layer deposition in solid oxide fuel cells are discussed towards optimized towards long-term durability at intermediate temperature.