• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1054-1055
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• 2006

Bend tests were performed at temperatures between 77 and 473K for W-19vol%Cu, W-22vol%Ag and W-19vol%(BAg-8) composites. Yield and maximum strengths and ductility of the composite were discussed in terms of microstructure and fractography. Results are summarized as follows. (1) Almost no difference was recognized in yield strength between the composites. In contrast, a large difference was recognized in maximum strength and ductility between the composites. (2) Inferior mechanical properties of W-Ag composite to W-Cu composite are attributed to heterogeneous distribution of Ag-phases, whilst inferior mechanical properties of W-(BAg-8) composite to W-Cu composite are attributed to large pores at grain boundaries.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.8-10
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• 2010

We report the enhancement of hole injection using thermally evaporated $CuO_x$ layer between Ag anode and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl ($\alpha$-NPD) in top-emitting organic light-emitting diode (TEOLED). The operation voltage at the current density of $1mA/cm^2$ of TEOLEDs decreased from 6.2 V to 5.0 V as the $CuO_x$ layer inserted between Ag and $\alpha$-NPD. $\alpha$-NPD was deposited in situ on Ag/$CuO_x$ and Ag anodes, and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energy of Ag/$CuO_x$ was lower by 0.05 eV even though Ag/$CuO_x$ had a higher work function. The work function of Ag/$CuO_x$ is higher by 0.53 eV than that of Ag, resulting in a decrease of the turn-on voltage via reduction of hole injection barrier.

• 대한화학회지
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• 제55권1호
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• pp.38-45
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• 2011

전이금속 이온인 수은(II) 및 은(I)에 대한 $\alpha$-케토안정화된 일리드화 인 $Ph_3P$=CHC(O) $C_6H_4$-X (X=Br, Ph)의 착물 반응 행동을 연구하였다. 수은(II) 착물 {$HgX_2$ [Y]} 2 ($Y_1$=4-bromo benzoyl methylene triphenyl phosphorane; X=Cl(1), Br(2), I(3), $Y_2$=4-phenyl benzoyl methylene triphenyl phosphorane; X=Cl(4), Br(5), I(6))는 $Y_1$ 및 $Y_2$를 $HgX_2$ (X=Cl, Br, I)와 각각 반응시켜 제조하였다. $\alpha$-케토안정화된 일리드화 인($Y_2$)의 은(I) 착물 [Ag$(Y_2)_2$] X(X=$BF_4$(7), OTf(8))는 이러한 일리드와 AgX(X=$BF_4$, OTf)를 아세톤에서 반응시켜 얻었다. 착물 (1)과 (4)의 결정구조를 고찰하였다. 일리드의 C-배위 이핵착물과 트랜스-구조의 착물$[Y_1HgCl_2]_2$. $CHCl_3$ (1) 및 $[Y_2HgCl_2]_2$ (4)를 형성하는 이들 반응에 대해 단결정 X-선 분석을 통해 고찰하였다. 모든 착물(1-3)은 IR, $^1H$ 및 $^{31}P$ NMR 뿐만아니라 $^{13}$CNMR을 통하여 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제9권6호
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• pp.338-341
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• 1988

Two crystal structures of fully dehydrated silver and potassium exchanged zeolite A, stoichiometries of $Ag_{9.3}K_{{2.7}^-}A$ (${\alpha}$ = 12.282(2) ${\AA}$) and $Ag_{10.7}K_{{1.3}^-}{\AA}$ (${\alpha}$ = 12.287(2) A) per unit cell, have been determined from 3-dimensional x-ray diffraction data gathered by counter methods. All structures were solved and refined in the cubic space group Pm3m at 21(1)$^{\circ}C$ . The crystals of $Ag_{9.3}K_{{2.7}^-}A$ and $Ag_{10.7}K_{{1.3}^-}A$ were prepared by flow method using exchange solutions in which mole ratios of $AgNO_3$ and $KNO_3$ were 1:10 and 1:5, respectively, with total concentration of 0.05M. The structures of the dehydrated $Ag_{9.3}K_{{2.7}^-}A$ and $Ag_{10.7}K_{{1.3}^-}A$ were refined to yield the final error indices $R_1$ = 0.037 and $R_2$ = 0.040 with 321 reflections, and $R_1$ = 0.042 and $R_2$ = 0.043 with 371 reflections, repectively, for which I > 3${\sigma}$(I). In both structures, eight $Ag^+$ ions are found nearly at 6-ring centers and each $Ag^+$ ion is nearly in the (1 1 1) plane at its O(3) ligands. The 8-ring sites are preferentially occupied by $K^+$ ions in both structures. 1.3 and 1.7 reduced silver atoms per unit cell were found inside of sodalite units of $Ag_{9.3}K_{{2.7}^-}A$ and that of $Ag_{10.7}K_{{1.3}^-}A$, respectively. These reduced silver species were presumably formed from the reduction of $Ag^+$ ions by oxide ions of residual water molecule or of the zeolite framework. These two crystals may be presented as hexasilver cluster in 21.7% and 28.3% of sodalite unit cells for $Ag_{9.3}K_{{2.7}^-}A$ and $Ag_{10.7}K_{{1.3}^-}A$, repectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.135-135
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• 2007

AgInSbTe물질은 compact disc rewritable(CD-RW)와 rewritable digital versatile disc (DVD+RW)과 같은 상변화 기록매체에 널리 쓰여지고 있다. 본 논문에서는 기존 AgInSbTe조성에 Te가 증가되었을때 변화하는 상변화 특성에 대한 연구를 수행하기 위하여 ($Ag_{3.4}In_{3.7}Sb_{76.4}Te_{16.5})x(Te)1-x$의 조성 (x=1,0.9,0.8,0.7)의 벌크 및 박막시료를 제작하였고 열증착방식을 이용하여 200nm 두께의 박막을 형성하였다. 각 박막은 질소분위기에서 100-300도 범위에 1 시간동안 열처리 하였고 XRD와 UV-ViS-NIR Spectrophotometer룰 통해 각 조성의 구조 및 광학적 특성 분석을 살시하였다. 또한 as-deposited 박막에 대하여 4-point probe를 사용하여 면저항을 측정하였고 AFM (atom force microscopy)을 통해 표면분석을 실시하였다.

• Bulletin of the Korean Chemical Society
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• 제6권4호
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• pp.202-206
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• 1985

The crystal structure of The crystal structure of $Ag^+$-Exchanged Zeolite A, $Ag_{4.6}Na_{7.4}-A$, dehydrated, treated with $H_2$, and evacuated, all at $350^{\circ}C$, has been determined by single crystal x-ray diffraction methods in the cubic space group Pm3m at $24(1)^{\circ}C;$ a = $12.208(2)\AA.$ The structure was refined to the final error indices R1 = 0.088 and R2 (weighted) = 0.069 using 194 independent reflections for which II_0$ > $3{\sigma}(I_0)$. On threefold axes near the centers of 6-oxygen rings, $7.4 Na^+$ ions and $0.6 Ag^+$ ions are found. Two non-equivalent 8-ring $Ag^+$ ions are found off the 8-ring planes, each containing about $0.6 Ag^+$ ions. Three non-equivalent Ag atom positions are found in the large cavity, each containing about 0.6 Ag atoms. This crystallographic analysis may be interpreted to indicate that $0.6 (Ag_6)^{3+}$ clusters are present in each large cavity. This cluster may be viewed as a nearly linear trisilver molecule $(Ag_3)^0$ (bond lengths, 2.92 and 2.94 $\AA;$ angle, $153^{\circ})$ stabilized by the coordination of each atom to a Ag^+$ ion at 3.30, 3.33, and 3.43 $\AA$, respectively. In addition, one of the silver atoms approaches all of the 0(1) oxygens of a 4-ring at $2.76\AA.$ Altogether $7.4 Na^+$ ions, $1.8 Ag^+$ ions, and 1.8 Ag atoms are located per unit cell. The remaining $1.0 Ag^+$ ion has been reduced and has migrated out of the zeolite framework to form silver crystallites on the surface of the zeolite single crystal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2251-2256
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• 2014

We have successfully decorated reduced graphene oxide (RGO) with silver nanoparticles (AgNPs) by microwaving silver alkylcarbamate for 13 seconds using 1-amino-4-methylpiperazine. Uniform AgNPs (20-40 nm) were effectively prepared, and 1-amino-4-methylpiperazine acted as a reaction medium, reducing agent, and stabilizer. Particle size and morphology were correlated with the silver alkylcarbamate concentration and microwave time. The graphene/AgNPs composites were characterized by Raman, X-ray diffraction, and scanning electron microscopy to confirm that the AgNPs were uniformly decorated onto the graphene. Measurements of the transparent conductive property at room temperature indicated that these graphene/AgNPs nanosheets with 55.45% transmittance were electrically continuous with a sheet resistance of approximately $43{\Omega}/{\Box}$.

• 한국결정성장학회지
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• 제16권5호
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• pp.189-197
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• 2006

[$AgGaSe_2$] 단결정 박막을 수평 전기로에서 합성한 $AgGaSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. $AgGaSe_2$의 광흡수 스펙트럼으로부터 구한 온도에 의존하는 에너지 밴드갭 $E_g(T)$는 Varshni 공식에 fitting한 결과 $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$를 잘 만족하였다. 성장된 $AgGaSe_2$ 단결정 박막을 Ag, Ga, Se 분위기에서 각각 열처리하여 10K에서 photoluminescience(PL) spectrum을 측정하여 점 결함의 기원을 알아보았다. PL 측정으로 부터 얻어진 $V_{Ag},\;V_{Se},\;Ag_{int}$, 그리고 $Se_{int}$는 주개와 받개로 분류되어졌다. $AgGaSe_2$ 단결정 박막을 Ag 분위기에서 열처리하면 p형으로 변환됨을 알 수 있었다. 또한, Ga 분위기에서 열처리하면 열처리 이전의 PL 스펙트럼을 보이고 있어서, $AgGaSe_2$ 단결정 박막에서 Ga은 안정된 결합의 형태로 있기 때문에 자연 결함의 형성에는 관련이 없음을 알았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.159-160
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• 2006

$AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.