• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.134-139
• /
• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.1
• /
• pp.18-23
• /
• 2010

We demonstrated that the solution processed organic light-emitting diodes (OLEDs) have the high efficiency with pre-treated indium-tin-oxide (ITO). ITO surface was pre-treated with four methods and compared each other. The pre-treatment of ITO surface improves the chemical and physical characteristics of ITO such as the surface roughness, adhesion property, and the hole injection ability. These properties were analyzed by the contact angle, atomic force microscope (AFM) image, and the current flow character in device. As a results, the device with ITO pre-treated by $O_2$ plasma shows the current efficiency of 5.93 cd/A, which is 1.5 times the device without pre-treatment.

• KSBB Journal
• /
• v.14 no.6
• /
• pp.643-650
• /
• 1999

An artificial photoreceptor composed of bacteriorhodopsin(bR)/flavin complex Langmuir-Blodgett(LB) films was developed by mimicking the human visual system. bR and flavin molecules were deposited onto solid substrate by LB technique, and the deposition of two molecules was proved by UV/VIS absorption spectroscopy and atomic force microscopy(AFM). Based on AFM images and photocurrent generation from the LB films, the optimal conditions for device fabrication were determined. With a series of light illuminations, the generated photocurrent could be detected, and the response characteristics of two molecules could be clearly distinguished from each other. According to the obtained signal shapes, three distinctive regions could be found in the obtained action spectrum. Using a correlation between the photocurrent generation and the wavelength of the input light, it was possible to organize the basic rules to interpret the wavelength of the input light. It is concluded that the proposed artificial photoreceptor would e applicable to the bioelectronic device for color recognition.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.30 no.4
• /
• pp.545-553
• /
• 2003

To achieve good dentin bonding, we must obtain proper wet dentin surface. The purpose of this study was to compare dentin surface according to different wetness degree by AFM image as studying how to obtaining proper wet dentin surface. Intact recently extracted primary teeth were used in the study. The extracted teeth were stored in distilled water at $4^{\circ}C$ until prepared. The teeth were used to prepare 1mm thick dentin disks with exposed surfaces parallel to the occlusal surfaces. The surface of the dentin were polished with polishing disk. The sample were ultrasonically cleaned with distilled water. The sample of each group were treated by different ways. We compared dentin surface of each group by AFM image. From the experiment, the following results were obtained. 1. Acid etching in the dentin surface of primary teeth, resulted in the removal of the smear layer, which opened dentinal tubules, caused the demineralization of peritubular and intertubular dentin, and exposed a collagen-rich transition zone. 2. If the etched dentin was so dehydrated, the intertubular dentin surfaces deceased in height and the diameters of the dentinal tubules decreased slightly. 3. In the group dried with compressed air for 20 seconds at 2 cm, the dentin surfaces were too excessive dried and dehydrated. 4. In the group dried with compressed air for 3 seconds at 2 cm, dry cotton, wet cotton, microbrush and absorbent tissue paper, the dentin surfaces were properly wet.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.2
• /
• pp.73-77
• /
• 2021

Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.

• Journal of Microbiology and Biotechnology
• /
• v.15 no.6
• /
• pp.1221-1228
• /
• 2005

Carbon electrode was applied to a wastewater treatment system as biofilm media. The spatial distribution of heterotrophic bacteria in aerobic wastewater biofilm grown on carbon electrode was investigated by scanning electron microscopy, atomic force microscopy, and biomass measurement. Five volts of electric oxidation and reduction potential were charged to the carbon anode and cathode of the bioelectrochemical system, respectively, but were not charged to electrodes of a conventional system. To correlate the biofilm architecture of bacterial populations with their activity, the bacterial treatment efficiency of organic carbons was measured in the bioelectrochemical system and compared with that in the conventional system. In the SEM image, the biofilm on the anodic medium of the bioelectrochemical system looked intact and active; however, that on the carbon medium of the conventional system appeared to be shrinking or damaging. In the AFM image, the thickness of biofilm formed on the carbon medium was about two times of those on the anodic medium. The bacterial treatment efficiency of organic carbons in the bioelectrochemical system was about 1.5 times higher than that in the conventional system. Some denitrifying bacteria can metabolically oxidize $H_{2}$, coupled to reduction of $NO_{3}^{-}\;to\;N_{2}$. $H_{2}$ was produced from the cathode in the bioelectrochemical system by electrolysis of water but was not so in the conventional system. The denitrification efficiency was less than $22\%$ in the conventional system and more than $77\%$ in the bioelectrochemical system. From these results, we found that the electrochemical coupling reactions between aerobic and anaerobic reactors may be a useful tool for improvement of wastewater treatment and denitrification efficiency, without special manipulations such as bacterial growth condition control, C/N ratio (the ratio of carbon to nitrogen) control, MLSS returning, or biofilm refreshing.

• Korean Journal of Materials Research
• /
• v.17 no.11
• /
• pp.574-579
• /
• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.424-424
• /
• 2009

그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

• Journal of the Semiconductor & Display Technology
• /
• v.6 no.4
• /
• pp.11-15
• /
• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.14 no.6
• /
• pp.41-48
• /
• 2015

Stainless steel mesh has been used as a filter in various fields, including domestic, medical, etc. However, the surface before machining may have an adverse effect the product quality and performance because it is not smooth. Especially, adsorbed impurities in the surface result in difficulty in cleaning. Therefore, in this paper, we propose an improved surface quality through electrochemical polishing (ECP). Two electrodes, composed of STS304 (anode) and copper (cathode) underwent machining with two conditions according to polishing time and current density. As the polishing time and current density increase, the surface of curvature decreases, and roughness and material removal rate (MRR) improves. The machined surface roughness and image were obtained through the atomic force microscope (AFM) and stereoscopic microscope. The study also analyzed hydrophilic effect through contact angles. This obtains corrosion resistance, smoothness, hydrophilic property, etc.