• 제목/요약/키워드: AES(Auger Electron Spectroscopy)

검색결과 194건 처리시간 0.031초

단열 코팅재료의 비파괴 평가기법 (Non-Destructive Evaluation for Material of Thermal Barrier Coatings)

  • 이철구;김태형
    • 한국공작기계학회논문집
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    • 제14권1호
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    • pp.44-51
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    • 2005
  • Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

Tribological properties of ultra-thin diamond-like carbon coating at various humidity

  • Cuong, Pham Duc;Ahn, Hyo-Sok;Kim, Choong-Hyun;Kim, Doo-In
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.161-162
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    • 2002
  • This study concerns the tribological behaviors of ultra-thin DLC coating with 3 nm thickness deposited in a mixed gas of argon + 20 % hydrogen as a function of humidity. Reciprocating wear tests employing a micro wear tester were performed under various normal loads and relative humidity in air environment. The chemical composition of the original and worn surfaces were studied by Auger electron spectroscopy (AES). It showed that the ultra-thin DLC coating exhibited low friction with enough wear stability at low normal load (0.18 N) and its tribological behavior was strongly dependent on the humidity. The sample surfaces before and after the test were examined using atomic force microscopy (AFM). Capillary force and meniscus areas were discussed in order to explain the influence of humidity on the friction force.

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Surface Phenomena of Deuterized Ethanol Exposed Zircaloy-4 Surfaces

  • Park, Ju-Yun;Jung, Se-Won;Chun, Mi-Sun;Kang, Yong-Cheol
    • Bulletin of the Korean Chemical Society
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    • 제30권6호
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    • pp.1349-1352
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    • 2009
  • We report the results of the surface chemistry of deuterized ethanol exposed Zircaloy-4 (Zry-4) surfaces with various amount of $C_2D_5$OD exposures at 190 K. This system was examined with Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) techniques. In TPD study, $D_2$ was evolved at two different desorption temperature regions accompanying with broad desorption background. The lower temperature feature at around 520 K showed first-order desorption kinetics. The high temperature desorption peak at around 650 K shifted to lower desorption temperature as the exposure of $C_2D_5$OD increased. The Zr(MNV) Auger peak shifted about 2.5 eV from 147 eV to lower electron energy followed by 300 L of $C_2D_5$OD dosing. This implies metallic zirconium was oxidized by deuterized ethanol adsorption. After stepwise annealing of the oxidized Zry-4 sample up to 843 K, the shifted Zr(MNV) peak was gradually shifted back to metallic zirconium peak position. After the sample was heated to 843 K, the oxygen content near the Zry-4 surface was recovered to clean surface level. The concentration of carbon, however, was not recovered by annealing the sample.

Quantitative Analysis of Ultrathin SiO2 Interfacial Layer by AES Depth Profilitng

  • Soh, Ju-Won;Kim, Jong-Seok;Lee, Won-Jong
    • The Korean Journal of Ceramics
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    • 제1권1호
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    • pp.7-12
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    • 1995
  • When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

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Sol-gel 법에 의한 Co-Zn Ferrite 박막의 제호와 자기 특성에 관한 연구 (Fabrication and magnetic properties of Co-Zn ferrite thin films prepared by a sol-gel process)

  • 김철성;안성용;이승화;양계준;류연국
    • 한국자기학회지
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    • 제11권4호
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    • pp.168-172
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    • 2001
  • Sol-gel법을 이용하여 Co$_{0.9}$Zn$_{0.1}$Fe$_2$O$_4$ 박막을 제조하였다. 성장한 박막의 구조 및 자기적 성질에 관하여 x선 회절분석기 (XRD), atomic force microscopy(AFM) 및 Auger electron spectroscopy(AES), 진동시료자화측정기 (VSM)을 이용하였다. Co-Zn 페라이트 박막의 경우, 400 $^{\circ}C$ 이상의 열처리 온도에서 단일상의 spinel 구조만을 가지고 있으며, 아무런 방향성이 없이 성장함을 나타내고 있다. 열처리 온도가 600 $^{\circ}C$ 이하에서 성장된 박막 표면의 거칠기는 3 nm 이하였으며, 형성된 입자의 크기는 약 40nm이하임을 알 수 있었다. 또한, 40$0^{\circ}C$에서 열처리한 경우 기판에서 Si이 Co-Zn 페라이트 박막내로 확산이 거의 나타나지 않았으나, 870 $^{\circ}C$에서 열처리한 경우 계면에서 기판과 박막의 상호 확산을 확인할 수 있었다. 제작한 박막은 외부 자기장의 방향과는 무관한 등방성의 자기적 특성을 보이며, 최대 보자력은 600 $^{\circ}C$에선 열처리한 자성박막이 약 1,900 Oe을 가짐을 알 수 있었다.있었다.

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Growth and Electronic Properties of Ag Overlayers on Stepped Pt(211) Surface

  • 김유권;김정원;김세훈
    • Bulletin of the Korean Chemical Society
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    • 제17권12호
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    • pp.1154-1157
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    • 1996
  • The growth and electronic properties of ultrathin silver films deposited onto Pt(211) surface were studied using Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy. The AES and LEED results indicate that the silver grows by a layer by layer growth followed by three dimensional islands growth. The XPS results show that the Ag 3d core-level binding energy of Ag overlayers on Pt(211) shifts toward lower binding energy relative to the bulk value at lower Ag coverage. This negative binding energy shift of the Ag 3d core level is explained by the reduced coordination number of the overlayer atoms and the resulting initial state band narrowing effect suggested by Wertheim and Citrin [Phys. Rev. Lett. 1978, 41, 1425].

(Al, Ga)As 와 (Cd, Mn)Te의 복합화합물 반도체표면에서의 자연 산화물의 형성 (Native Oxide Formations on (Al, Ga) As and (Cd, Mn)Te surfaces)

  • 최성수
    • 한국진공학회지
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    • 제5권1호
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    • pp.6-13
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    • 1996
  • The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

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CIGS nanopowder 제조 및 특성분석 (Preparation and Characteristics of CIGS nanopowder)

  • 함창우;서정대;조정민;송기봉
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.371-372
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    • 2009
  • We have prepared and characterized CIGS nanopowder for absorber layer of photovoltaic. CIGS nanopowder were obtained at $260^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS nanopowder were identified to have a typical chalcopyrite tetragonal structure by using X-ray diffraction(XRD), Inductively Coupled Plasma Auger Electron Spectroscopy (AES), Scanning Electron Microscopy(SEM).

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Nonactivaed adsorption of $CH_3_Cl$ on Si(100)-2$\times$1 studied by LEED, AES and semiempirical method.

  • Lee, Junyoung;Kim, Sehun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.157-157
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    • 2000
  • The adsorption processes of methyl chloride on Si(100)-2$\times$1 have been studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and semiempirical PM3 calculations. The dissociative adsorption of the methyl chloride on Si(100) takes place without breaking of the silicon dimer with high efficiency. For adsorption at the room temperature, the existence of a precursor state is confirmed by the behavior of the sticking probability depending on the coverage and temperature. From AES measurements, the determined activation barrier of adsorption ($\Delta$ Hads) is -28.4 kj/mol. This results indicate that the dissociative process is nonactivated. The optimized precursor state of CH3Cl on the Si(100)-2$\times$1 surface was determined by PM3 calculations based on a cluster model.

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Tribological Properties of Sputtered Boron Carbide Coating and the Effect of ${CH}_4$ Reactive Component of Processing Gas

  • Cuong, Pham-Duc;Ahn, Hyo-Sok;Kim, Jong-Hee;Shin, Kyung-Ho
    • KSTLE International Journal
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    • 제4권2호
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    • pp.56-59
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.